Philips byd11 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D122
BYD11 series
Controlled avalanche rectifiers
Product specification
Supersedes data of April 1996
1996 Sep 26
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYD11 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
k
Fig.1 Simplified outline (SOD91) and symbol.
a
MAM196
DESCRIPTION
MARKING
Cavity free cylindrical glass package
(1)
through Implotec
technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
BYD11D 11D
BYD11G 11G
BYD11J 11J
BYD11K 11K
BYD11M 11M
TYPE NUMBER MARKING CODE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYD11D − 200 V
BYD11G − 400 V
BYD11J − 600 V
BYD11K − 800 V
BYD11M − 1000 V
V
RWM
crest working reverse voltage
BYD11D − 200 V
BYD11G − 400 V
BYD11J − 600 V
BYD11K − 800 V
BYD11M − 1000 V
V
R
continuous reverse voltage
BYD11D − 200 V
BYD11G − 400 V
BYD11J − 600 V
BYD11K − 800 V
BYD11M − 1000 V
1996 Sep 26 2 Not recommended for new designs
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYD11 series
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F(AV)
I
FSM
P
RSM
T
stg
T
j
average forward current Ttp=55°C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
=60°C; PCB mounting
T
amb
(see Fig.9);
averaged over any 20 ms
period; see Figs 3 and 4
non-repetitive peak forward current t = 10 ms half sinewave;
non-repetitive peak reverse power
dissipation
Tj=T
VR=V
t=20µs half sinewave;
Tj=T
prior to surge;
j max
RRMmax
prior to surge
j max
storage temperature −65 +175 °C
junction temperature
see Fig.5
− 0.50 A
− 0.37 A
− 10 A
− 200 W
−65 +175 °C
ELECTRICAL CHARACTERISTICS
=25°C; unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
tzt forward voltage
V
F
V
(BR)R
reverse avalanche
I
= 0.5 A; Tj=T
F
= 0.5 A; see Fig.6
I
F
IR= 0.1 mA
; see Fig.6
j max
−−0.91 V
−−1.06 V
breakdown voltage
BYD11D 225 −−V
BYD11G 450 −−V
BYD11J 650 −−V
BYD11K 900 −−V
BYD11M 1100 −−V
I
R
t
rr
reverse current
reverse recovery time
V
R=VRRMmax
V
R=VRRMmax
; see Fig.7
; Tj= 165 °C; see Fig.7
when switched from I
= 0.5 A to IR=1A;
F
−−1µA
−−75 µA
− 3 −
µs
measured at IR= 0.25 A; see Fig.10
C
d
diode capacitance
V
= 0 V; f = 1 MHz; see Fig.8
R
− 14 −
pF
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 180 K/W
thermal resistance from junction to ambient note 1 250 K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the
“General Part of associated Handbook”
.
1996 Sep 26 3 Not recommended for new designs
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