Philips BYC10-600CT Datasheet
Philips Semiconductors Product specification
Rectifier diode BYC10-600CT
ultrafast, low switching loss
FEATURES SYMBOL QUICK REFERENCE DATA
• Dual diode VR = 600 V
• Extremely fast switching
• Low reverse recovery current VF ≤ 1.75 V
• Low thermal resistance
a1
13
• Reduces switching losses in I
associated MOSFET
k
2
APPLICATIONS PINNING SOT78 (TO220AB)
a2
= 10 A
O(AV)
trr = 19 ns (typ)
• Active power factor correction PIN DESCRIPTION
• Half-bridge lighting ballasts
tab
• Half-bridge/ full-bridge switched 1 anode 1
mode power supplies.
2 cathode
The BYC10-600CT is supplied in
the SOT78 (TO220AB) 3 anode 2
conventional leaded package.
tab cathode
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
O(AV)
I
FRM
I
FSM
T
T
RRM
RWM
R
stg
j
Peak repetitive reverse voltage - 600 V
Crest working reverse voltage - 600 V
Continuous reverse voltage Tmb ≤ 110 ˚C - 500 V
Average output current (both δ = 0.5; with reapplied V
diodes conducting) Tmb ≤ 50 ˚C
Repetitive peak forward current δ = 0.5; with reapplied V
per diode Tmb ≤ 50 ˚C
1
1
; - 10 A
RRM(max)
; - 10 A
RRM(max)
Non-repetitive peak forward t = 10 ms - 40 A
current per diode t = 8.3 ms - 44 A
sinusoidal; Tj = 150˚C prior to surge
Storage temperature -40 150 ˚C
with reapplied V
RWM(max)
Operating junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
1 T
mb(max)
October 1999 1 Rev 1.000
Thermal resistance junction to per diode - - 2.5 K/W
mounting base both diodes - - 2.2 K/W
Thermal resistance junction to in free air. - 60 - K/W
ambient
limited by thermal runaway
Philips Semiconductors Product specification
Rectifier diode BYC10-600CT
ultrafast, low switching loss
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C, per diode unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
t
rr
t
rr
t
rr
I
rrm
I
rrm
V
fr
Forward voltage IF = 5 A; Tj = 150˚C - 1.4 1.75 V
IF = 10 A; Tj = 150˚C - 1.75 2.2 V
IF = 5 A; - 2.0 2.8 V
Reverse current VR = 600 V - 9 100 µA
VR = 500 V; Tj = 100 ˚C - 0.9 3.0 mA
Reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs - 30 50 ns
Reverse recovery time IF = 5 A; VR = 400 V; - 19 - ns
dIF/dt = 500 A/µs
Reverse recovery time IF = 5 A; VR = 400 V; - 25 30 ns
dIF/dt = 500 A/µs; Tj = 125˚C
Peak reverse recovery current IF = 5 A; VR = 400 V; - 0.7 3 A
dIF/dt = 50 A/µs; Tj = 125˚C
Peak reverse recovery current IF = 5 A; VR = 400 V; - 8 11 A
dIF/dt = 500 A/µs; Tj = 125˚C
Forward recovery voltage IF = 10 A; dIF/dt = 100 A/µs-911V
IL
Vin
150 uH
typ
500 V MOSFET
ID
Vo = 400 V d.c.
OUTPUT DIODE
Fig.1. Typical application, output rectifier in boost
converter power factor correction circuit. Continuous
conduction mode, where the transistor turns on whilst
forward current is still flowing in the diode.
Vin = 400 V d.c.
Vin
IFIR
inductive load
IL
Fig.2. Typical application, freewheeling diode in half
bridge converter. Continuous conduction mode, where
each transistor turns on whilst forward current is still
flowing in the other bridge leg diode.
October 1999 2 Rev 1.000
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