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DATA SH EET
Product specification
Supersedes data of 1998 Aug 05
2000 Jan 10
DISCRETE SEMICONDUCTORS
BY9400 series
Fast high-voltage soft-recovery
controlled avalanche rectifiers
M3D351
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2000 Jan 10 2
Philips Semiconductors Product specification
Fast high-voltage soft-recovery
controlled avalanche rectifiers
BY9400 series
FEATURES
• Plastic package
• Glass passivated
• High maximum operating temperature
• Low leakage current
• Excellent stability
• 40% overvoltage allowed during 5 seconds
• Guaranteed avalanche energy absorption capability
• Very low reverse recovery time
• Soft-recovery switching characteristics
• Compact construction.
APPLICATIONS
• For colour television and monitors up to 32 kHz
(indication)
• High-voltage applications for:
– Multipliers
– Diode-split-transformers (FBTs).
DESCRIPTION
Plastic package, using glass passivation and a high
temperature alloyed construction.
This package is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
Thepackageshouldbeusedinaninsulatingmediumsuch
as resin, oil or SF6 gas.
handbook, halfpage
ka
MAM402
Fig.1 Simplified outline (SOD107B) and symbol.
MARKING
Cathode band colour codes.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
TYPE NUMBER PACKAGE CODE OUTER BAND INNER BAND
BY9410 SOD107B orange violet
BY9412 SOD107B orange orange
BY9414 SOD107B orange lilac
BY9416 SOD107B orange grey
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM1
repetitive peak reverse voltage
BY9410 − 10 kV
BY9412 − 12 kV
BY9414 − 14 kV
BY9416 − 16 kV
V
RRM2
repetitive peak reverse voltage max. 5 seconds
BY9410 − 14.0 kV
BY9412 − 16.8 kV
BY9414 − 19.6 kV
BY9416 − 22.4 kV
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2000 Jan 10 3
Philips Semiconductors Product specification
Fast high-voltage soft-recovery
controlled avalanche rectifiers
BY9400 series
Note
1. Withstands peak currents during flash-over in a picture tube.
ELECTRICAL CHARACTERISTICS
Tj=25°C; unless otherwise specified.
I
F(AV)
average forward current averaged over any 20 ms period
BY9410 − 5mA
BY9412 − 5mA
BY9414 − 5mA
BY9416 − 5mA
I
FRM
repetitive peak forward current note 1 − 500 mA
T
stg
storage temperature −65 +175 °C
T
j
junction temperature
BY9410 −65 +150 °C
BY9412 −65 +145 °C
BY9414 −65 +140 °C
BY9416 −65 +140 °C
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
forward voltage IF=10mA
BY9410 − 24 V
BY9412 − 30 V
BY9414 − 34 V
BY9416 − 40 V
I
R
reverse current VR=V
RRM1
; Tj= 120 °C − 3 µA
Q
r
recovery charge when switched from IF= 100 mA to VR≥ 100 V
and dIF/dt = −200 mA/µs
0.7 − nC
t
rr
reverse recovery time when switched from IF= 2 mA to IR= 4 mA;
measured at IR=1mA
− 100 ns
C
d
diode capacitance VR= 0 V; f = 1 MHz
BY9410 0.50 − pF
BY9412 0.40 − pF
BY9414 0.35 − pF
BY9416 0.30 − pF
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT