Philips BY9410, BY9416, BY9414 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D351
BY9400 series
Fast high-voltage soft-recovery
controlled avalanche rectifiers
Preliminary specification
File under Discrete Semiconductors, SC11
1998 Aug 05
Philips Semiconductors Preliminary specification
Fast high-voltage soft-recovery
controlled avalanche rectifiers
FEATURES
• Plastic package
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• 40% overvoltage allowed during
5 sec
• Guaranteed avalanche energy
absorption capability
• Very low reverse recovery time
• Soft-recovery switching
characteristics
• Compact construction.
APPLICATIONS
DESCRIPTION
Plastic package, using glass
passivation and a high temperature
alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
MARKING
BY9400 series
expansion of all used parts are
matched.
The package should be used in an
insulating medium such as resin, oil
or SF6 gas.
ka
handbook, halfpage
MAM402
Fig.1 Simplified outline (SOD107B) and symbol.
• For colour television and monitors
Cathode band colour codes
up to 32 kHz (indication)
• High-voltage applications for:
– multipliers
– diode-split-transformers
(FBT’s).
TYPE NUMBER PACKAGE CODE INNER BAND OUTER BAND
BY9410 SOD107B violet orange
BY9412 SOD107B orange orange
BY9414 SOD107B lilac orange
BY9416 SOD107B grey orange
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM1
repetitive peak reverse voltage
BY9410 − 10 kV
BY9412 − 12 kV
BY9414 − 14 kV
BY9416 − 16 kV
V
RRM2
repetitive peak reverse voltage max. 5 seconds
BY9410 − 14.0 kV
BY9412 − 16.8 kV
BY9414 − 19.6 kV
BY9416 − 22.4 kV
1998 Aug 05 2
Philips Semiconductors Preliminary specification
Fast high-voltage soft-recovery
BY9400 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F(AV)
I
FRM
T
stg
T
j
Note
1. Withstands peak currents during flash-over in a picture tube.
average forward current averaged over any
BY9410 − 5mA
20 ms period
BY9412 − 5mA
BY9414 − 5mA
BY9416 − 3mA
repetitive peak forward current note 1 − 500 mA
storage temperature −65 +175 °C
junction temperature
BY9410 −65 +150 °C
BY9412 −65 +145 °C
BY9414 −65 +140 °C
BY9416 −65 +140 °C
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage IF=10mA
BY9410 −−24 V
BY9412 −−30 V
BY9414 −−34 V
BY9416 −−40 V
I
R
Q
r
reverse current VR=V
; Tj= 120 °C −− 3µA
RRM1
recovery charge when switched from IF= 100 mA to
− 0.7 − nC
VR≥ 100 V and dIF/dt = −200 mA/µs
t
rr
reverse recovery time when switched from IF= 2 mA to
−−<100 ns
IR= 4 mA; measured at IR=1mA
C
d
diode capacitance VR=0V; f=1MHz
BY9410 − 0.50 − pF
BY9412 − 0.40 − pF
BY9414 − 0.35 − pF
BY9416 − 0.30 − pF
1998 Aug 05 3
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