DISCRETE SEMICONDUCTORS
DATA SH EET
M3D350
BY8200 series
Ultra fast high-voltage soft-recovery
controlled avalanche rectifiers
Product specification
1998 Jul 16
Philips Semiconductors Product specification
Ultra fast high-voltage soft-recovery
controlled avalanche rectifiers
FEATURES
• Plastic package
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• 40% overvoltage allowed during
5 sec
• Guaranteed avalanche energy
absorption capability
• Very low reverse recovery time
• Soft-recovery switching
characteristics
• Compact construction.
APPLICATIONS
• For colour television and monitors
up to 90 kHz (indication)
• High-voltage applications for:
– multipliers
– diode-split-transformers
(FBT’s).
DESCRIPTION
Plastic package, using glass
passivation and a high temperature
alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
handbook, halfpage
MARKING
Cathode band colour codes
TYPE NUMBER PACKAGE CODE INNER BAND OUTER BAND
BY8206 SOD118A green green
BY8208 SOD118A red green
BY8210 SOD118B violet green
BY8212 SOD118B orange green
BY8200 series
expansion of all used parts are
matched.
The package should be used in an
insulating medium such as resin, oil
or SF6 gas.
ka
MAM402
Fig.1 Simplified outline (SOD118A/B) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM1
repetitive peak reverse voltage
BY8206 − 6kV
BY8208 − 8kV
BY8210 − 10 kV
BY8212 − 12 kV
V
RRM2
repetitive peak reverse voltage max. 5 seconds
BY8206 − 8.4 kV
BY8208 − 11.2 kV
BY8210 − 14.0 kV
BY8212 − 16.8 kV
1998 Jul 16 2
Philips Semiconductors Product specification
Ultra fast high-voltage soft-recovery
BY8200 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F(AV)
I
FRM
T
stg
T
j
Note
1. Withstands peak currents during flash-over in a picture tube.
average forward current averaged over any
BY8206 − 10 mA
20 ms period; see Figs 2 to 5
BY8208 − 5mA
BY8210 − 5mA
BY8212 − 5mA
repetitive peak forward current note 1 − 500 mA
storage temperature −65 +175 °C
junction temperature
BY8206 −65 +160 °C
BY8208 −65 +155 °C
BY8210 −65 +150 °C
BY8212 −65 +145 °C
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage IF= 10 mA; see Figs 6 to 9
BY8206 −−19 V
BY8208 −−23 V
BY8210 −−29 V
BY8212 −−35 V
I
R
Q
r
reverse current VR=V
; Tj= 120 °C −− 3µA
RRM1
recovery charge when switched from IF= 100 mA to
− 0.2 − nC
VR≥ 100 V and dIF/dt = −200 mA/µs;
see Fig 10
t
rr
reverse recovery time when switched from IF= 2 mA to
−−< 45 ns
IR= 4 mA; measured at IR= 1 mA;
see Fig 11
C
d
diode capacitance VR=0V; f=1MHz
BY8206 − 0.50 − pF
BY8208 − 0.42 − pF
BY8210 − 0.35 − pF
BY8212 − 0.30 − pF
1998 Jul 16 3
Philips Semiconductors Product specification
Ultra fast high-voltage soft-recovery
controlled avalanche rectifiers
GRAPHICAL DATA
a = 1.57
T
amb
MBK207
(°C)
10
handbook, halfpage
I
F(AV)
(mA)
8
6
4
; R
a = 6.32
th j-a
120
≤ 120 K/W.
2
0
0 40 80 200160
BY8206.
a=I
F(RMS)/IF(AV)
a = 6.32: line output transformer application; see Fig 12.
a = 1.57: half-sinewave.
; VR=V
RWmax
BY8200 series
handbook, halfpage
5
I
F(AV)
(mA)
4
3
2
; R
a = 6.32
th j-a
1
0
0 40 80 200160
BY8208.
a=I
F(RMS)/IF(AV)
a = 6.32: line output transformer application; see Fig 12.
a = 1.57: half-sinewave.
; VR=V
RWmax
a = 1.57
120
≤ 120 K/W.
T
amb
MBK208
(°C)
Fig.2 Maximum permissible average forward
current as a function of ambient temperature.
handbook, halfpage
5
I
F(AV)
(A)
4
3
2
1
0
0 200
BY8210.
a=I
F(RMS)/IF(AV)
a = 6.32: line output transformer application; see Fig 12.
a = 1.57: half-sinewave.
; VR=V
a = 6.32 a = 1.57
40 80 120
; R
th j-a
≤ 120 K/W.
RWmax
160
T
amb
MDA815
(°C)
Fig.3 Maximum permissible average forward
current as a function of ambient temperature.
handbook, halfpage
5
I
F(AV)
(A)
4
3
2
1
0
0 200
BY8212.
a=I
F(RMS)/IF(AV)
a = 6.32: line output transformer application; see Fig 12.
a = 1.57: half-sinewave.
a = 6.32 a = 1.57
40 80 120
; VR=V
RWmax
; R
th j-a
≤ 120 K/W.
160
T
amb
MDA816
(°C)
Fig.4 Maximum permissible average forward
current as a function of ambient temperature.
1998 Jul 16 4
Fig.5 Maximum permissible average forward
current as a function of ambient temperature.