DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D117
BY8100 series
Very fast high-voltage soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of October 1994
File under Discrete Semiconductors, SC01
1996 May 24
Philips Semiconductors Product specification
Very fast high-voltage soft-recovery
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Soft-recovery switching
characteristics
• Compact construction.
APPLICATIONS
• For colour television and monitors
up to 128 kHz
• High-voltage applications for:
– Multipliers
– Layer-wound diode-split-
transformers where controlled
avalanche is required.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
handbook, halfpage
BY8100 series
expansion of all used parts are
matched.
The package is designed to be used
in an insulating medium such as
resin, oil or SF6 gas.
k
Fig.1 Simplified outline (SOD61) and symbol.
a
MAM163
MARKING
Cathode band colour codes
TYPE NUMBER PACKAGE CODE INNER BAND OUTER BAND
BY8104 SOD61AC orange black
BY8106 SOD61AD orange green
BY8108 SOD61AE orange red
BY8110 SOD61AF orange violet
BY8112 SOD61AH orange orange
BY8114 SOD61AI orange lilac
BY8116 SOD61AJ orange grey
1996 May 24 2
Philips Semiconductors Product specification
Very fast high-voltage soft-recovery
BY8100 series
controlled avalanche rectifiers
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
RW
I
F(AV)
I
FRM
P
RSM
T
stg
T
j
repetitive peak reverse voltage
BY8104 − 5kV
BY8106 − 8kV
BY8108 − 10 kV
BY8110 − 12 kV
BY8112 − 14 kV
BY8114 − 17 kV
BY8116 − 19 kV
working reverse voltage
BY8104 − 4kV
BY8106 − 6kV
BY8108 − 8kV
BY8110 − 10 kV
BY8112 − 12 kV
BY8114 − 14 kV
BY8116 − 16 kV
average forward current averaged over any
BY8104 − 20 mA
BY8106 − 10 mA
20 ms period;
see Figs 2 to 8
BY8108 − 5mA
BY8110 − 5mA
BY8112 − 5mA
BY8114 − 5mA
BY8116 − 3mA
repetitive peak forward current note 1 − 500 mA
non-repetitive peak reverse power dissipation t = 20 µs half sinewave;
BY8104 − 1.7 kW
Tj=T
prior to surge
j max
BY8106 − 2.5 kW
BY8108 − 3.0 kW
BY8110 − 3.8 kW
BY8112 − 5.0 kW
BY8114 − 5.5 kW
BY8116 − 6.5 kW
storage temperature −65 +120 °C
junction temperature −65 +120 °C
Note
1. Withstands peak currents during flash-over in a picture tube.
1996 May 24 3