DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D117
BY8000 series
Fast high-voltage soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of June 1994
File under Discrete Semiconductors, SC01
1996 May 24
Philips Semiconductors Product specification
Fast high-voltage soft-recovery
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Soft-recovery switching
characteristics
• Compact construction.
APPLICATIONS
• For colour television and monitors
up to 25 kHz
• High-voltage applications for:
– Multipliers
– Layer-wound diode-split-
transformers where controlled
avalanche is required.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
The package is designed to be used
in an insulating medium such as
resin, oil or SF6 gas.
handbook, halfpage
k
Fig.1 Simplified outline (SOD61) and symbol.
BY8000 series
a
MAM163
MARKING
Cathode band colour codes
TYPE NUMBER PACKAGE CODE INNER BAND OUTER BAND
BY8004 SOD61AC violet black
BY8006 SOD61AD violet green
BY8008 SOD61AE violet red
BY8010 SOD61AF violet violet
BY8012 SOD61AH violet orange
BY8014 SOD61AI violet lilac
BY8016 SOD61AJ violet grey
1996 May 24 2
Philips Semiconductors Product specification
Fast high-voltage soft-recovery
BY8000 series
controlled avalanche rectifiers
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
RW
I
F(AV)
I
FRM
P
RSM
T
stg
T
j
repetitive peak reverse voltage
BY8004 − 5kV
BY8006 − 8kV
BY8008 − 10 kV
BY8010 − 12 kV
BY8012 − 14 kV
BY8014 − 17 kV
BY8016 − 19 kV
working reverse voltage
BY8004 − 4kV
BY8006 − 6kV
BY8008 − 8kV
BY8010 − 10 kV
BY8012 − 12 kV
BY8014 − 14 kV
BY8016 − 16 kV
average forward current averaged over any
BY8004 − 20 mA
BY8006 − 10 mA
20 ms period;
see Figs 2 to 8
BY8008 − 5mA
BY8010 − 5mA
BY8012 − 5mA
BY8014 − 5mA
BY8016 − 3mA
repetitive peak forward current note 1 − 500 mA
non-repetitive peak reverse power dissipation t = 20 µs half sinewave;
BY8004 − 2.5 kW
Tj=T
prior to surge
j max
BY8006 − 3.5 kW
BY8008 − 4.2 kW
BY8010 − 5.2 kW
BY8012 − 7.0 kW
BY8014 − 7.8 kW
BY8016 − 9.1 kW
storage temperature −65 +120 °C
junction temperature −65 +120 °C
Note
1. Withstands peak currents during flash-over in a picture tube.
1996 May 24 3