Philips BY8010, BY8004, BY8016, BY8014 Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D117
BY8000 series
Fast high-voltage soft-recovery controlled avalanche rectifiers
Product specification Supersedes data of June 1994 File under Discrete Semiconductors, SC01
1996 May 24
Philips Semiconductors Product specification
Fast high-voltage soft-recovery controlled avalanche rectifiers
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Soft-recovery switching characteristics
Compact construction.
APPLICATIONS
For colour television and monitors up to 25 kHz
High-voltage applications for: – Multipliers – Layer-wound diode-split-
transformers where controlled avalanche is required.
DESCRIPTION
Rugged glass package, using a high temperature alloyed construction.
This package is hermetically sealed and fatigue free as coefficients of
expansion of all used parts are matched.
The package is designed to be used in an insulating medium such as resin, oil or SF6 gas.
handbook, halfpage
k
Fig.1 Simplified outline (SOD61) and symbol.
BY8000 series
a
MAM163
MARKING Cathode band colour codes
TYPE NUMBER PACKAGE CODE INNER BAND OUTER BAND
BY8004 SOD61AC violet black BY8006 SOD61AD violet green BY8008 SOD61AE violet red BY8010 SOD61AF violet violet BY8012 SOD61AH violet orange BY8014 SOD61AI violet lilac BY8016 SOD61AJ violet grey
1996 May 24 2
Philips Semiconductors Product specification
Fast high-voltage soft-recovery
BY8000 series
controlled avalanche rectifiers
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
RW
I
F(AV)
I
FRM
P
RSM
T
stg
T
j
repetitive peak reverse voltage
BY8004 5kV BY8006 8kV BY8008 10 kV BY8010 12 kV BY8012 14 kV BY8014 17 kV BY8016 19 kV
working reverse voltage
BY8004 4kV BY8006 6kV BY8008 8kV BY8010 10 kV BY8012 12 kV BY8014 14 kV BY8016 16 kV
average forward current averaged over any
BY8004 20 mA BY8006 10 mA
20 ms period; see Figs 2 to 8
BY8008 5mA BY8010 5mA BY8012 5mA BY8014 5mA
BY8016 3mA repetitive peak forward current note 1 500 mA non-repetitive peak reverse power dissipation t = 20 µs half sinewave;
BY8004 2.5 kW
Tj=T
prior to surge
j max
BY8006 3.5 kW
BY8008 4.2 kW
BY8010 5.2 kW
BY8012 7.0 kW
BY8014 7.8 kW
BY8016 9.1 kW storage temperature 65 +120 °C junction temperature 65 +120 °C
Note
1. Withstands peak currents during flash-over in a picture tube.
1996 May 24 3
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