Philips BUT18F, BUT18AF Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BUT18F; BUT18AF
Silicon diffused power transistors
Product specification
Supersedes data of 1997 Aug 13
1999 Jun 11
Philips Semiconductors Product specification
Silicon diffused power transistors BUT18F; BUT18AF
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 package with
electrically isolated mounting base.
APPLICATIONS
• Converters
• Inverters
• Switching regulators
• Motor control systems.
QUICK REFERENCE DATA
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
mb mounting base; electrically isolated from all pins
ndbook, halfpage
MBB008
23
1
MBK109
Fig.1 Simplified outline (SOT186) and symbol.
2
1
3
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
CESM
collector-emitter peak voltage VBE=0
BUT18F 850 V
BUT18AF 1000 V
V
CEO
collector-emitter voltage open base
BUT18F 400 V
BUT18AF 450 V
V
I
Csat
I
C
I
CM
P
t
f
CEsat
tot
collector-emitter saturation voltage see Fig.7 1.5 V
collector saturation current 4 A
collector current (DC) see Fig.4 6 A
collector current (peak value) see Fig.4 12 A
total power dissipation Th≤ 25 °C; see Fig.2 33 W
fall time resistive load; see Figs 10 and 11 0.8 µs
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-h
thermal resistance from junction to external heatsink note 1 6.15 K/W
note 2 3.65 K/W
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
1999 Jun 11 2
Philips Semiconductors Product specification
Silicon diffused power transistors BUT18F; BUT18AF
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
Csat
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
collector-emitter peak voltage VBE=0
BUT18F − 850 V
BUT18AF − 1000 V
collector-emitter voltage open base
BUT18F − 400 V
BUT18AF − 450 V
collector saturation current − 4A
collector current (DC) see Fig.4 − 6A
collector current (peak value) see Fig.4 − 12 A
base current (DC) − 3A
base current (peak value) − 6A
total power dissipation Th≤ 25 °C; see Fig.2; note 1 − 20 W
T
≤ 25 °C; see Fig.2; note 2 − 33 W
h
storage temperature −65 +150 °C
junction temperature − 150 °C
Notes
1. Without heatsink compound.
2. With heatsink compound.
ISOLATION CHARACTERISTICS
SYMBOL PARAMETER TYP. MAX. UNIT
V
C
isolM
isol
isolation voltage from all terminals to external heatsink (peak value) − 1500 V
isolation capacitance from collector to external heatsink 12 − pF
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CEOsust
collector-emitter sustaining voltage IC= 100 mA; I
BUT18F 400 −−V
L = 25 mH; see Figs 3 and 6
Boff
=0;
BUT18AF 450 −−V
V
CEsat
V
BEsat
I
CES
collector-emitter saturation voltage IC= 4 A; IB= 800 mA; see Fig.7 −−1.5 V
base-emitter saturation voltage IC= 4 A; IB= 800 mA; see Fig.8 −−1.3 V
collector-emitter cut-off current VCE=V
CESMmax
; VBE=0;
−−1mA
note 1
V
CE=VCESMmax
; VBE=0;
−−2mA
Tj= 125 °C; note 1
I
EBO
emitter-base cut-off current VEB=9V; IC=0 −−10 mA
1999 Jun 11 3
Philips Semiconductors Product specification
Silicon diffused power transistors BUT18F; BUT18AF
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
h
FE
Switching times resistive load (see Figs 10 and 11)
t
on
t
s
t
f
Switching times inductive load (see Figs 10 and 13)
t
s
t
f
Note
1. Measured with a half-sinewave voltage (curve tracer).
DC current gain VCE=5V; IC= 10 mA;
see Fig.9
V
=5V; IC= 1 A; see Fig.9 10 20 35
CE
turn-on time I
storage time I
fall time I
storage time I
fall time I
I
I
I
Con
Bon
Con
Bon
Con
Bon
Con
Con
=4A;
= −I
Boff
=4A;
= −I
Boff
=4A;
= −I
Boff
= 4 A; I
= 4 A; I
= 800 mA
= 800 mA
= 800 mA
= 800 mA − 1.6 2.5 µs
Bon
= 800 mA − 150 400 ns
Bon
10 18 35
−−1µs
−−4µs
−−0.8 µs
120
handbook, halfpage
P
tot max
(%)
80
40
0
050
100 150
T
h
Fig.2 Power derating curve.
o
(
MGK674
C)
andbook, halfpage
30 to 60 Hz
Fig.3 Test circuit for collector-emitter
100 to 200 Ω
L
300 Ω
6 V
sustaining voltage.
+ 50 V
horizontal
oscilloscope
vertical
1 Ω
MGE252
1999 Jun 11 4
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