Datasheet BUT18F, BUT18AF Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BUT18F; BUT18AF

Silicon diffused power transistors

Product specification
Supersedes data of 1997 Aug 13

1999 Jun 11

Philips Semiconductors Product specification

Silicon diffused power transistors BUT18F; BUT18AF

DESCRIPTION

High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 package with
electrically isolated mounting base.

APPLICATIONS

• Converters

• Inverters

• Switching regulators

• Motor control systems.

QUICK REFERENCE DATA

PINNING

PIN DESCRIPTION

1 base
2 collector
3 emitter

mb mounting base; electrically isolated from all pins

ndbook, halfpage

MBB008

23

1

MBK109

Fig.1 Simplified outline (SOT186) and symbol.

2

1

3

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

CESM

collector-emitter peak voltage VBE=0

BUT18F 850 V
BUT18AF 1000 V

V

CEO

collector-emitter voltage open base

BUT18F 400 V

BUT18AF 450 V
V
I

Csat

I

C

I

CM

P
t

f

CEsat

tot

collector-emitter saturation voltage see Fig.7 1.5 V
collector saturation current 4 A
collector current (DC) see Fig.4 6 A
collector current (peak value) see Fig.4 12 A
total power dissipation Th≤ 25 °C; see Fig.2 33 W
fall time resistive load; see Figs 10 and 11 0.8 µs

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-h

thermal resistance from junction to external heatsink note 1 6.15 K/W

note 2 3.65 K/W

Notes

1. Mounted without heatsink compound and 30 ±5 N force on centre of package.

2. Mounted with heatsink compound and 30 ±5 N force on centre of package.

1999 Jun 11 2

Philips Semiconductors Product specification

Silicon diffused power transistors BUT18F; BUT18AF

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CESM

V

CEO

I

Csat

I

C

I

CM

I

B

I

BM

P

tot

T

stg

T

j

collector-emitter peak voltage VBE=0

BUT18F − 850 V

BUT18AF − 1000 V

collector-emitter voltage open base

BUT18F − 400 V

BUT18AF − 450 V

collector saturation current − 4A
collector current (DC) see Fig.4 − 6A
collector current (peak value) see Fig.4 − 12 A
base current (DC) − 3A
base current (peak value) − 6A
total power dissipation Th≤ 25 °C; see Fig.2; note 1 − 20 W

T

≤ 25 °C; see Fig.2; note 2 − 33 W

h

storage temperature −65 +150 °C
junction temperature − 150 °C

Notes

1. Without heatsink compound.

2. With heatsink compound.

ISOLATION CHARACTERISTICS

SYMBOL PARAMETER TYP. MAX. UNIT

V
C

isolM
isol

isolation voltage from all terminals to external heatsink (peak value) − 1500 V
isolation capacitance from collector to external heatsink 12 − pF

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CEOsust

collector-emitter sustaining voltage IC= 100 mA; I

BUT18F 400 −−V

L = 25 mH; see Figs 3 and 6

Boff

=0;

BUT18AF 450 −−V
V

CEsat

V

BEsat

I

CES

collector-emitter saturation voltage IC= 4 A; IB= 800 mA; see Fig.7 −−1.5 V
base-emitter saturation voltage IC= 4 A; IB= 800 mA; see Fig.8 −−1.3 V
collector-emitter cut-off current VCE=V

CESMmax

; VBE=0;

−−1mA

note 1
V

CE=VCESMmax

; VBE=0;

−−2mA

Tj= 125 °C; note 1

I

EBO

emitter-base cut-off current VEB=9V; IC=0 −−10 mA

1999 Jun 11 3

Philips Semiconductors Product specification

Silicon diffused power transistors BUT18F; BUT18AF

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

h

FE

Switching times resistive load (see Figs 10 and 11)
t

on

t

s

t

f

Switching times inductive load (see Figs 10 and 13)
t

s

t

f

Note

1. Measured with a half-sinewave voltage (curve tracer).

DC current gain VCE=5V; IC= 10 mA;

see Fig.9
V

=5V; IC= 1 A; see Fig.9 10 20 35

CE

turn-on time I

storage time I

fall time I

storage time I
fall time I

I

I

I

Con
Bon

Con
Bon

Con
Bon

Con
Con

=4A;
= −I

Boff

=4A;
= −I

Boff

=4A;
= −I

Boff

= 4 A; I
= 4 A; I

= 800 mA

= 800 mA

= 800 mA

= 800 mA − 1.6 2.5 µs

Bon

= 800 mA − 150 400 ns

Bon

10 18 35

−−1µs

−−4µs

−−0.8 µs

120

handbook, halfpage

P

tot max

(%)

80

40

0

050

100 150

T

h

Fig.2 Power derating curve.

o

(

MGK674

C)

andbook, halfpage

30 to 60 Hz

Fig.3 Test circuit for collector-emitter

100 to 200 Ω

L

300 Ω

6 V

sustaining voltage.

+ 50 V

horizontal

oscilloscope

vertical

1 Ω

MGE252

1999 Jun 11 4

Philips Semiconductors Product specification

Silicon diffused power transistors BUT18F; BUT18AF

handbook, full pagewidth

10

10

(A)

2

10

I

C

I

CM max

10

I

C max

1

−1

−2

I

II

DC

MGB922

BUT18F

−3

10

−4

10

110

Mounted without heatsink compound and 30±5 N force on centre of package.
Tmb<25°C
I -Region of permissible DC operation.
II -Permissible extension for repetitive pulse operation.

10

BUT18AF

Fig.4 Forward bias SOAR.

1999 Jun 11 5

2

3

10

VCE (V)

4

10

Philips Semiconductors Product specification

Silicon diffused power transistors BUT18F; BUT18AF

10

handbook, full pagewidth

Z

th j−mb
(K/W)

δ = 1

1

0.75

0.50

0.33

0.20

0.10

−1

10

0.05

0.02

0.01

−2

10

0

−3

10

−4

10

MGB866

−3

10

−2

10

−1

10

110

10

tp (s)

2

Fig.5 Transient thermal impedance.

I

handbook, halfpage

C

(mA)

250
200

100

0

min

V

CEOsust

Fig.6 Oscilloscope display for collector-emitter

sustaining voltage.

MGE239

VCE (V)

V

CEsat

2

(1)

(2)

(3)

handbook, halfpage

(V)

1

0

−2

10

−1

10

110

IB (A)

Tj=25°C.
(1) IC=1A.
(2) IC=2A.
(3) IC=4A.

Fig.7 Collector-emitter saturation voltage as a

function of base current.

MGB884

1999 Jun 11 6

Philips Semiconductors Product specification

Silicon diffused power transistors BUT18F; BUT18AF

1.5

handbook, halfpage

V

BEsat

(V)

1

0.5

−2

10

Tj=25°C.
(1) IC=4A.
(2) IC=2A.
(3) IC=1A.

−1

10

110

Fig.8 Base-emitter saturation voltage as a

function of base current.

(1)
(2)
(3)

IB (A)

MGB880

2

10

handbook, halfpage

h

FE

10

1

−2

10

VCE= 5V; Tj=25°C.

Fig.9 DC current gain; typical values.

MBC097

VCE = 5 V

1V

−1

10

11010

IC (A)

2

handbook, halfpage

V

IM

0

t

p

T

VCC= 250V; tp=20µs; VIM= −6to +8 V; tp/T = 0.01.
The values of RB and RL are selected in accordance with I

requirements.

I

Bon

V

CC

R

L

R

B

D.U.T.

Fig.10 Test circuit resistive load.

MGE244

Con

and

handbook, halfpage

90%

I

B

10%

90%

I

C

10%

tr≤ 20 ns.

Fig.11 Switching times waveforms with

tr ≤30 ns

t

on

resistive load.

MBB731

I

B on

t

I

B off

I

C on

t

f

t

s

t

1999 Jun 11 7

Philips Semiconductors Product specification

Silicon diffused power transistors BUT18F; BUT18AF

handbook, halfpage

+I

B

−V

BE

VCL= 300 V; VCC= 30 V; VBE= −5 V; LB=1µH; LC= 200 µH.

L

V

CC

L

C

B

D.U.T.

Fig.12 Test circuit inductive load.

V

CL

MGE246

handbook, halfpage

90%

I

B

10%

90%

I

C

10%

Fig.13 Switching time waveforms with

t

r

inductive load.

I

B on

t

−I

B off

I

C on

t

f

t

s
t

off

t

MGE238

1999 Jun 11 8

Philips Semiconductors Product specification

Silicon diffused power transistors BUT18F; BUT18AF

PACKAGE OUTLINE

Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 exposed tabs SOT186

E

E

1

P

D

1

D

m

q

A

A

1

L

1

b

L

0.55

0.38

1

2

23

1

b

e

e

1

D

17.0

16.4

D

1

7.9

10.2

7.5

REFERENCES

c

w M

0 5 10 mm

scale

E

E

1

5.7

5.3

2.54

9.6

e

e

1

14.3

5.08

13.5

L

DIMENSIONS (mm are the original dimensions)

A

A

b

UNIT

mm

Note

1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.

OUTLINE
VERSION

SOT186 TO-220

4.4

4.0

1

2.9

2.5

b

1

1.5

0.9

1.3

0.7

IEC JEDEC EIAJ

Q

c

(1)

L

1

4.8

4.0

m

L

2

3.2

0.9

10 0.4

3.0

0.5

EUROPEAN

PROJECTION

1.4

1.2

qQPL

w

4.4

4.0

ISSUE DATE

97-06-11

1999 Jun 11 9

Philips Semiconductors Product specification

Silicon diffused power transistors BUT18F; BUT18AF

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Jun 11 10

Philips Semiconductors Product specification

Silicon diffused power transistors BUT18F; BUT18AF

NOTES

1999 Jun 11 11

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1999 66

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Printed in The Netherlands 135002/02/pp12 Date of release: 1999 Jun 11 Document order number: 9397 750 06093