Philips BUK9830-30 Datasheet

Philips Semiconductors Product specification

TrenchMOS transistor BUK9830-30
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effectpowertransistorina
plastic envelope suitable for surface V
mounting. Using ’trench’I

DS

D

technology, the device features very Drain current (DC) T
low on-state resistance and has P
integral zener diodes giving ESD T
protectionupto 2kV. Itis intended for R

tot
j

DS(ON)

use in automotive and general resistance VGS = 5 V
purpose switching applications.

PINNING - SOT223 PIN CONFIGURATION SYMBOL

Drain-source voltage 30 V
Drain current (DC) Tsp = 25 ˚C 12.8 A

= 25 ˚C 5.9 A

amb

Total power dissipation 8.3 W
Junction temperature 150 ˚C
Drain-source on-state 30 mΩ

PIN DESCRIPTION

4

d

1 gate
2 drain
3 source
4 drain (tab)

1

23

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
±V
I

D

I

D

I

DM

P
T

DS
DGR

tot

stg

GS

, T

j

Drain-source voltage - - 30 V
Drain-gate voltage RGS = 20 kΩ -30V
Gate-source voltage - - 10 V
Drain current (DC) Tsp = 25 ˚C - 12.8 A

T

= 25 ˚C - 5.9 A

amb

Drain current (DC) Tsp = 100 ˚C - 9 A

T

= 100 ˚C - 4.1 A

amb

Drain current (pulse peak value) Tsp = 25 ˚C - 51 A

T

= 25 ˚C - 23.6 A

amb

Total power dissipation Tsp = 25 ˚C - 8.3 W

T

= 25 ˚C - 1.8 W

amb

Storage & operating temperature - - 55 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-sp

R

th j-amb

December 1997 1 Rev 1.100

Thermal resistance junction to Mounted on any PCB 12 15 K/W
solder point
Thermal resistance junction to Mounted on PCB of Fig.19 - 70 K/W
ambient

Philips Semiconductors Product specification

TrenchMOS transistor BUK9830-30

Logic level FET

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

C

STATIC CHARACTERISTICS

Tj= 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

GSS

±V

(BR)GSS

R

DS(ON)

Electrostatic discharge capacitor Human body model - 2 kV
voltage, all pins (100 pF, 1.5 kΩ)

Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 30 - - V
voltage Tj = -55˚C 27 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 1 1.5 2 V

Tj = 150˚C 0.5 - - V

Tj = -55˚C - - 2.3

Zero gate voltage drain current VDS = 30 V; VGS = 0 V; - 0.05 10 µA

Tj = 150˚C - - 500 µA

Gate source leakage current VGS = ±5 V; VDS = 0 V - 0.02 1 µA

Tj = 150˚C - 10 µA
Gate-source breakdown IG = ±1 mA; 10 - - V
voltage
Drain-source on-state VGS = 5 V; ID = 3.2 A - 24 30 mΩ
resistance Tj = 150˚C - - 51 mΩ

DYNAMIC CHARACTERISTICS

Tsp = 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g
Q

Q
Q

C
C
C

t
t
t
t

L
L
L

fs

g(tot)
gs
gd

iss
oss
rss

d on
r
d off
f

d

d

s

Forward transconductance VDS = 25 V; ID = 5.9 A 7 14 - S
Total gate charge ID = 5.9 A; V

= 24 V; VGS = 5 V - 24 - nC

DD

Gate-source charge - 3 - nC
Gate-drain (Miller) charge - 11 - nC

Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1050 - pF
Output capacitance - 270 - pF
Feedback capacitance - 140 - pF

Turn-on delay time VDD = 15 V; ID = 5.9 A; - 30 45 ns
Turn-on rise time VGS = 5 V; RG = 5 Ω - 80 130 ns
Turn-off delay time Resistive load - 95 135 ns
Turn-off fall time - 40 55 ns

Internal drain inductance Measured from contact screw on - 3.5 - nH

tab to centre of die

Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH

from package to centre of die

Internal source inductance Measured from source lead 6 mm - 7.5 - nH

from package to source bond pad

December 1997 2 Rev 1.100

Philips Semiconductors Product specification

TrenchMOS transistor BUK9830-30

Logic level FET

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

I

DRM

V

SD

t

rr

Q

rr

AVALANCHE LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

W

DSS

Continuous reverse drain - - 40 A
current
Pulsed reverse drain current - - 160 A
Diode forward voltage IF = 3.2 A; VGS = 0 V - 0.75 1.2 V

IF = 5.9 A; VGS = 0 V - 0.85 -

Reverse recovery time IF = 5.9 A; -dIF/dt = 100 A/µs; - 100 - ns
Reverse recovery charge VGS = -10 V; VR = 25 V - 0.4 - µC

Drain-source non-repetitive ID = 5.9 A; VDD ≤ 25 V; - - 60 mJ
unclamped inductive turn-off VGS = 10 V; RGS = 50 Ω; Tsp = 25 ˚C
energy

December 1997 3 Rev 1.100