Philips BUK9775-55 Datasheet
Philips Semiconductors Product specification
TrenchMOS transistor BUK9775-55
Logic level FET
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effectpowertransistorina
plastic full-pack envelope using V
’trench’ technology. The device I
featuresverylow on-stateresistance P
and has integral zener diodes giving T
ESD protection up to 2kV. It is R
DS
D
tot
j
DS(ON)
intended for use in automotive and resistance VGS = 5 V
general purpose switching
applications.
PINNING - SOT186A PIN CONFIGURATION SYMBOL
Drain-source voltage 55 V
Drain current (DC) 11.7 A
Total power dissipation 19 W
Junction temperature 150 ˚C
Drain-source on-state 75 mΩ
PIN DESCRIPTION
case
d
1 gate
2 drain
3 source
case isolated
123
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
±V
I
D
I
D
I
DM
P
T
DS
DGR
tot
stg
GS
, T
j
Drain-source voltage - - 55 V
Drain-gate voltage RGS = 20 kΩ -55V
Gate-source voltage - - 10 V
Drain current (DC) Tmb = 25 ˚C - 11.7 A
Drain current (DC) Tmb = 100 ˚C - 7.4 A
Drain current (pulse peak value) Tmb = 25 ˚C - 47 A
Total power dissipation Tmb = 25 ˚C - 19 W
Storage & operating temperature - - 55 150 ˚C
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge capacitor Human body model - 2 kV
voltage, all pins (100 pF, 1.5 kΩ)
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
April 1998 1 Rev 1.000
Thermal resistance junction to with heatsink compound - 6.5 K/W
heatsink
Thermal resistance junction to in free air 55 - K/W
ambient
Philips Semiconductors Product specification
TrenchMOS transistor BUK9775-55
Logic level FET
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
I
DSS
I
GSS
±V
R
DS(ON)
(BR)GSS
Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 55 - - V
voltage Tj = -55˚C 50 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 1 1.5 2 V
Tj = 150˚C 0.6 - - V
Tj = -55˚C - - 2.3 V
Zero gate voltage drain current VDS = 55 V; VGS = 0 V; - 0.05 10 µA
Tj = 150˚C - - 100 µA
Gate source leakage current VGS = ±5 V; VDS = 0 V - 0.02 1 µA
Tj = 150˚C - 5 µA
Gate-source breakdown IG = ±1 mA; 10 - - V
voltage
Drain-source on-state VGS = 5 V; ID = 7 A - 58 75 mΩ
resistance Tj = 150˚C - - 139 mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
C
C
C
t
t
t
t
L
fs
iss
oss
rss
d on
r
d off
f
d
Forward transconductance VDS = 25 V; ID = 10 A 5 10 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 500 650 pF
Output capacitance - 110 135 pF
Feedback capacitance - 60 85 pF
Turn-on delay time VDD = 30 V; ID = 10 A; - 10 15 ns
Turn-on rise time VGS = 5 V; RG = 10 Ω - 4770ns
Turn-off delay time Resistive load - 28 40 ns
Turn-off fall time - 33 45 ns
Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
L
s
Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
ISOLATION LIMITING VALUE AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
ISOL
C
ISOL
R.M.S isolation voltage from all f = 50-60Hz; sinusoidal waveform; - - 2500 V
three terminals to external R.H.≤65% clean & dustfree
heatsink
Capacitance from T2 to f = 1 MHZ - 10 - pF
external heatsink
April 1998 2 Rev 1.000
Philips Semiconductors Product specification
TrenchMOS transistor BUK9775-55
Logic level FET
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
I
DRM
V
SD
t
rr
Q
rr
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W
DSS
Continuous reverse drain - - 11.7 A
current
Pulsed reverse drain current - - 47 A
Diode forward voltage IF = 11.7 A; VGS = 0 V - 0.95 1.2 V
Reverse recovery time IF = 11.7 A; -dIF/dt = 100 A/µs; - 32 - ns
Reverse recovery charge VGS = -10 V; VR = 30 V - 0.12 - µC
Drain-source non-repetitive ID = 10 A; VDD ≤ 25 V; - - 30 mJ
unclamped inductive turn-off VGS = 5 V; RGS = 50 Ω; Tmb = 25 ˚C
energy
April 1998 3 Rev 1.000
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