Philips buk95180 100a, buk96180 100a DATASHEETS

Philips Semiconductors Product specification

TrenchMOS transistor BUK95180-100A
Logic level FET BUK96180-100A

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effectpowertransistorina
plastic envelope available in V
TO220AB and SOT404 . Using I
’trench’ technology which features P
very low on-state resistance. It is T
intended for use in automotive and R

DS

D

tot
j

DS(ON)

general purpose switching resistance V
applications. V

PINNING TO220AB & SOT404 PIN CONFIGURATION SYMBOL

Drain-source voltage 100 V
Drain current (DC) 11 A
Total power dissipation 54 W
Junction temperature 175 ˚C
Drain-source on-state

= 5 V 180 mΩ

GS

= 10 V 173 mΩ

GS

PIN DESCRIPTION

1 gate

mb

tab

d

2 drain

g

s

3 source

tab/mb drain

2

13

SOT404
BUK96180-100A

1

23

TO220AB
BUK95180-100A

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
±V
I

D

I

D

I

DM

P
T

DS
DGR

tot
stg

GS

, T

j

Drain-source voltage - - 100 V
Drain-gate voltage RGS = 20 kΩ - 100 V
Gate-source voltage - - 15 V
Drain current (DC) Tmb = 25 ˚C - 11 A
Drain current (DC) Tmb = 100 ˚C - 7.7 A
Drain current (pulse peak value) Tmb = 25 ˚C - 44 A
Total power dissipation Tmb = 25 ˚C - 54 W
Storage & operating temperature - - 55 175 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-mb

Thermal resistance junction to - - 2.8 K/W
mounting base

R

th j-a

Thermal resistance junction to in free air 60 - K/W
ambient(TO220AB)

R

th j-a

Thermal resistance junction to Minimum footprint, FR4 50 - K/W
ambient(SOT404) board

May 2000 1 Rev 1.100

Philips Semiconductors Product specification

TrenchMOS transistor BUK95180-100A
Logic level FET BUK96180-100A

STATIC CHARACTERISTICS

Tj= 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

GSS

R

DS(ON)

DYNAMIC CHARACTERISTICS

Tmb = 25˚C unless otherwise specified

Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 100 - - V
voltage Tj = -55˚C 89 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 1 1.5 2.0 V

Tj = 175˚C 0.5 - - V

Tj = -55˚C - - 2.3 V

Zero gate voltage drain current VDS = 100 V; VGS = 0 V; - 0.05 10 µA

= 175˚C - - 500 µA

T

j

Gate source leakage current VGS = ±10 V; VDS = 0 V - 2 100 nA
Drain-source on-state VGS = 5 V; ID = 5 A - 165 180 mΩ
resistance T

= 175˚C - - 450 mΩ

j

VGS = 10 V; ID = 5 A - 152 173 mΩ
V

= 4.5 V; ID = 5 A - 170 200 mΩ

GS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

C
C
C

t
t
t
t

L

iss
oss
rss

d on
r
d off
f

d

Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 464 619 pF
Output capacitance - 60 72 pF
Feedback capacitance - 37 50 pF

Turn-on delay time VDD = 30 V; R

=1.2Ω;-920ns

load

Turn-on rise time VGS = 5 V; RG = 10 Ω - 112 157 ns
Turn-off delay time - 18 27 ns
Turn-off fall time - 25 38 ns

Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH

from package to centre of die

L

d

Internal drain inductance Measured from contact screw on - 3.5 - nH

tab to centre of die(TO220AB)

L

d

Internal drain inductance Measured from upper edge of drain - 2.5 - nH

tab to centre of die(SOT404)

L

s

Internal source inductance Measured from source lead to - 7.5 - nH

source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

I

DRM

V

t

rr

Q

SD

rr

Continuous reverse drain - - 11 A
current
Pulsed reverse drain current - - 44 A
Diode forward voltage IF = 5 A; VGS = 0 V - 0.85 1.2 V

IF = 11 A; VGS = 0 V - 1.1 - V

Reverse recovery time IF = 11 A; -dIF/dt = 100 A/µs; - 49 - ns
Reverse recovery charge VGS = -10 V; VR = 30 V - 0.13 - µC

May 2000 2 Rev 1.100

Philips Semiconductors Product specification

TrenchMOS transistor BUK95180-100A
Logic level FET BUK96180-100A

AVALANCHE LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1

W

DSS

Drain-source non-repetitive ID = 5.5 A; VDD ≤ 25 V; - - 1.5 mJ
unclamped inductive turn-off V

= 5 V; RGS = 50 Ω; Tmb = 25 ˚C

GS

energy

!

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Tmb / C

= f(Tmb)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 5 V

D 25 ˚C

100

ID/A

RDS(ON)=VSD/ID

10

1

0.1
1 10 100 1000

DC

VSD/V

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

Zth/(K/W)

10

0.5

1

0.2

0.1

0.05

0.02

0.1

0.01

0.001

0

1E-07 1E-05 1E-03 1E-01 1E+01

t/s

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

p

1 For maximum permissible repetive avalanche current see fig.18.

May 2000 3 Rev 1.100