Philips BUK9606-55A Datasheet

Philips Semiconductors Product specification

TrenchMOS transistor BUK9606-55A
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effectpowertransistorina
plastic envelope suitable for surface V
mounting. Using ’trench’ technology I
thedevice features very low on-state P
resistance. It is intended for use in T
automotive and general purpose R

DS

D

tot
j

DS(ON)

switching applications. resistance VGS = 5 V 6.3 mΩ

PINNING - SOT404 PIN CONFIGURATION SYMBOL

Drain-source voltage 55 V
Drain current (DC) 75 A
Total power dissipation 230 W
Junction temperature 175 ˚C
Drain-source on-state

V

= 10 V 5.8 mΩ

GS

PIN DESCRIPTION

mb

d

1 gate
2 drain (no connection

possible)

3 source

mb drain

2

13

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V

±V
±V

I

D

I

D

I

DM

P
T

DS
DGR

tot

stg

GS
GSM

, T

j

Drain-source voltage - - 55 V
Drain-gate voltage RGS = 20 kΩ -55V
Gate-source voltage - - 10 V
Non-repetitive gate-source voltage tp≤50µS - 15 V

Drain current (DC) Tmb = 25 ˚C - 75 A
Drain current (DC) Tmb = 100 ˚C - 75 A
Drain current (pulse peak value) Tmb = 25 ˚C - 240 A
Total power dissipation Tmb = 25 ˚C - 230 W
Storage & operating temperature - - 55 175 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-mb

R

th j-a

January 1999 1 Rev 1.000

Thermal resistance junction to - - 0.65 K/W
mounting base
Thermal resistance junction to Minimum footprint, FR4 50 - K/W
ambient board

Philips Semiconductors Product specification

TrenchMOS transistor BUK9606-55A

Logic level FET

STATIC CHARACTERISTICS

Tj= 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

GSS

R

DS(ON)

DYNAMIC CHARACTERISTICS

Tmb = 25˚C unless otherwise specified

Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 55 - - V
voltage Tj = -55˚C 50 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 1 1.5 2.0 V

Tj = 175˚C 0.5 - - V

Tj = -55˚C - - 2.3 V

Zero gate voltage drain current VDS = 55 V; VGS = 0 V; - 0.05 10 µA

Tj = 175˚C - - 500 µA
Gate source leakage current VGS = ±10 V; VDS = 0 V - 2 100 nA
Drain-source on-state VGS = 5 V; ID = 25 A - 5.3 6.3 mΩ
resistance Tj = 175˚C - - 13.2 mΩ

VGS = 10 V; ID = 25 A - 4.8 5.8 mΩ
VGS = 4.5 V; ID = 25 A - - 6.7 mΩ

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

C
C
C

t
t
t
t

L

iss
oss
rss

d on
r
d off
f

d

Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 6500 8600 pF
Output capacitance - 1000 1200 pF
Feedback capacitance - 650 850 pF

Turn-on delay time VDD = 30 V; R

=1.2Ω; - 45 65 ns

load

Turn-on rise time VGS = 5 V; RG = 10 Ω - 180 270 ns
Turn-off delay time - 420 590 ns
Turn-off fall time - 235 330 ns

Internal drain inductance Measured from upper edge of drain - 2.5 - nH

tab to centre of die

L

s

Internal source inductance Measured from source lead - 7.5 - nH

soldering point to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

I

DRM

V

t

rr

Q

SD

rr

Continuous reverse drain - - 75 A
current
Pulsed reverse drain current - - 240 A
Diode forward voltage IF = 25 A; VGS = 0 V - 0.85 1.2 V

IF = 75 A; VGS = 0 V - 1.1 - V

Reverse recovery time IF = 75 A; -dIF/dt = 100 A/µs; - 80 - ns
Reverse recovery charge VGS = -10 V; VR = 30 V - 0.2 - µC

AVALANCHE LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

W

DSS

January 1999 2 Rev 1.000

Drain-source non-repetitive ID = 75 A; VDD ≤ 25 V; - - 500 mJ
unclamped inductive turn-off VGS = 5 V; RGS = 50 Ω; Tmb = 25 ˚C
energy

Philips Semiconductors Product specification

TrenchMOS transistor BUK9606-55A
Logic level FET

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Tmb / C

= f(Tmb)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 5 V

D 25 ˚C

Zth / (K/W)

P

t/S

D

D =

T

t

T

p

t

p

t

0.1

0.01

0.001

1

D =

0.5

0.2

0.1

0.05

0.02

0

0.00001 0.001 0.1 10

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

400

10.0

ID/A

7.0

6.0

300

200

100

0

0246810

4.85.0

4.6

4.4

VDS/D

VGS\V =

4.2

4.0

3.8

3.6

3.4

3.2

3.0

2.8

2.6

2.4

Fig.5. Typical output characteristics, Tj = 25 ˚C

ID = f(VDS); parameter V

GS

.

RDS(ON)/mOhm

1000

ID/A

RDS(ON) = VDS/ID

100

10

1

1 10 100

DC

VDS/V

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

tp =

10uS

100uS

1mS

10mS

100mS

p

8.5
VGS/V =

8

7.5

7

3.0

6.5

5.5

3.2

3.4

6

3.6

4.0

5.0

5

0 20406080100

ID/A

Fig.6. Typical on-state resistance, Tj = 25 ˚C

R

= f(ID); parameter V

DS(ON)

GS

.

January 1999 3 Rev 1.000