Philips BUK9515-100A Datasheet
Philips Semiconductors Product specification
TrenchMOS transistor BUK9515-100A
Logic level FET
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effectpowertransistorina
plastic envelope using ’trench’V
technology which features very low I
on-state resistance. Itis intended for P
use in automotive and general T
purpose switching applications. R
DS
D
tot
j
DS(ON)
PINNING - TO220AB PIN CONFIGURATION SYMBOL
Drain-source voltage 100 V
Drain current (DC) 75 A
Total power dissipation 230 W
Junction temperature 175 ˚C
Drain-source on-state
resistance VGS = 5 V 15 mΩ
V
= 10 V 14.4 mΩ
GS
PIN DESCRIPTION
tab
d
1 gate
2 drain
g
3 source
tab drain
123
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
±V
±V
I
D
I
D
I
DM
P
T
DS
DGR
tot
stg
GS
GSM
, T
j
Drain-source voltage - - 100 V
Drain-gate voltage RGS = 20 kΩ - 100 V
Gate-source voltage - - 10 V
Non-repetitive gate-source voltage tp≤50µS - 15 V
Drain current (DC) Tmb = 25 ˚C - 75 A
Drain current (DC) Tmb = 100 ˚C - 53 A
Drain current (pulse peak value) Tmb = 25 ˚C - 240 A
Total power dissipation Tmb = 25 ˚C - 230 W
Storage & operating temperature - - 55 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
December 1998 1 Rev 1.100
Thermal resistance junction to - - 0.65 K/W
mounting base
Thermal resistance junction to in free air 60 - K/W
ambient
Philips Semiconductors Product specification
TrenchMOS transistor BUK9515-100A
Logic level FET
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
I
DSS
I
GSS
R
DS(ON)
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 100 - - V
voltage Tj = -55˚C 89 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 1 1.5 2.0 V
Tj = 175˚C 0.5 - - V
Tj = -55˚C - - 2.3 V
Zero gate voltage drain current VDS = 100 V; VGS = 0 V; - 0.05 10 µA
Tj = 175˚C - - 500 µA
Gate source leakage current VGS = ±10 V; VDS = 0 V - 2 100 nA
Drain-source on-state VGS = 5 V; ID = 25 A - 12.0 15.0 mΩ
resistance Tj = 175˚C - - 40.5 mΩ
VGS = 10 V; ID = 25 A - 11.5 14.4 mΩ
VGS = 4.5 V; ID = 25 A - - 16.0 mΩ
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
C
C
t
t
t
t
L
iss
oss
rss
d on
r
d off
f
d
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 6500 8600 pF
Output capacitance - 550 660 pF
Feedback capacitance - 325 400 pF
Turn-on delay time VDD = 30 V; R
=1.2Ω; - 45 65 ns
load
Turn-on rise time VGS = 5 V; RG = 10 Ω - 130 195 ns
Turn-off delay time - 400 560 ns
Turn-off fall time - 130 190 ns
Internal drain inductance Measured from contact screw on - 3.5 - nH
tab to centre of die
L
d
Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
L
s
Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
I
DRM
V
t
rr
Q
SD
rr
Continuous reverse drain - - 75 A
current
Pulsed reverse drain current - - 240 A
Diode forward voltage IF = 25 A; VGS = 0 V - 0.85 1.2 V
IF = 75 A; VGS = 0 V - 1.1 - V
Reverse recovery time IF = 75 A; -dIF/dt = 100 A/µs; - 80 - ns
Reverse recovery charge VGS = -10 V; VR = 30 V - 0.35 - µC
December 1998 2 Rev 1.100
Philips Semiconductors Product specification
TrenchMOS transistor BUK9515-100A
Logic level FET
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W
DSS
Drain-source non-repetitive ID = 35 A; VDD ≤ 25 V; - - 120 mJ
unclamped inductive turn-off VGS = 5 V; RGS = 50 Ω; Tmb = 25 ˚C
energy
December 1998 3 Rev 1.100
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