Philips buk92150 55a DATASHEETS

Philips Semiconductors Product specification

TrenchMOS transistor BUK92150-55A
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effectpowertransistorina
plastic envelope suitable for surface V
mounting. Using ’trench’ technology I
thedevice features very low on-state P
resistance. It is intended for use in T
automotive and general purpose R

DS

D

tot
j

DS(ON)

switching applications. resistance VGS = 5 V 150 mΩ

PINNING - SOT428 PIN CONFIGURATION SYMBOL

Drain-source voltage 55 V
Drain current (DC) 10.7 A
Total power dissipation 36 W
Junction temperature 175 ˚C
Drain-source on-state

V

= 10 V 137 mΩ

GS

PIN DESCRIPTION

tab

d

1 gate
2 drain

g

3 source

tab drain

2

1

3

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V

±V
±V

I

D

I

D

I

DM

P
T

DS
DGR

tot

stg

GS
GSM

, T

j

Drain-source voltage - - 55 V
Drain-gate voltage RGS = 20 kΩ -55V
Gate-source voltage - - 10 V
Non-repetitive gate-source voltage tp≤50µS - 15 V

Drain current (DC) Tmb = 25 ˚C - 10.7 A
Drain current (DC) Tmb = 100 ˚C - 7.5 A
Drain current (pulse peak value) Tmb = 25 ˚C - 43 A
Total power dissipation Tmb = 25 ˚C - 36 W
Storage & operating temperature - - 55 175 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-mb

R

th j-a

July 2000 1 Rev 1.200

Thermal resistance junction to - - 4.1 K/W
mounting base
Thermal resistance junction to Minimum footprint, FR4 71.4 - K/W
ambient board

Philips Semiconductors Product specification

TrenchMOS transistor BUK92150-55A

Logic level FET

STATIC CHARACTERISTICS

Tj= 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

GSS

R

DS(ON)

DYNAMIC CHARACTERISTICS1

Tmb = 25˚C unless otherwise specified

Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 55 - - V
voltage Tj = -55˚C 50 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 1 1.5 2.0 V

Tj = 175˚C 0.5 - - V

Tj = -55˚C - - 2.3 V

Zero gate voltage drain current VDS = 55 V; VGS = 0 V; - 0.05 10 µA

Tj = 175˚C - - 500 µA
Gate source leakage current VGS = ±10 V; VDS = 0 V - 2 100 nA
Drain-source on-state VGS = 5 V; ID = 5 A - 128 150 mΩ
resistance Tj = 175˚C - - 315 mΩ

VGS = 10 V; ID = 5 A - 116 137 mΩ
VGS = 4.5 V; ID = 5 A - - 161 mΩ

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

C
C
C

t
t
t
t

L

iss
oss
rss

d on
r
d off
f

d

Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 250 339 pF
Output capacitance - 54 65 pF
Feedback capacitance - 42 58 pF

Turn-on delay time VDD = 30 V; R

=2.7Ω;-616ns

load

Turn-on rise time VGS = 5 V; RG = 10 Ω - 6480ns
Turn-off delay time - 20 30 ns
Turn-off fall time - 26 40 ns

Internal drain inductance Measured from upper edge of drain - 2.5 - nH

tab to centre of die

L

s

Internal source inductance Measured from source lead - 7.5 - nH

soldering point to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

I

DRM

V

t

rr

Q

SD

rr

Continuous reverse drain - - 10.7 A
current
Pulsed reverse drain current - - 43 A
Diode forward voltage IF = 5 A; VGS = 0 V - 0.85 1.2 V

IF = 10.7 A; VGS = 0 V - 1.1 - V

Reverse recovery time IF = 13 A; -dIF/dt = 100 A/µs; - 24 - ns
Reverse recovery charge VGS = -10 V; VR = 30 V - 0.026 - µC

AVALANCHE LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

W

DSS

July 2000 2 Rev 1.200

Drain-source non-repetitive ID = 8 A; VDD ≤ 25 V; - - 25 mJ
unclamped inductive turn-off VGS = 5 V; RGS = 50 Ω; Tmb = 25 ˚C
energy

Philips Semiconductors Product specification

TrenchMOS transistor BUK92150-55A
Logic level FET

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Tmb / C

= f(Tmb)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 5 V

D 25 ˚C

Transient thermal impedance, Zth j-mb (K/W)

10.00

D = 0.5

1.00

0.10

0.01
1E-06 1E-04 1E-02 1E+00 1E+02 1E+04

0.2

0.1

0.05

0.02

single pulse

Pulse width, tp (s)

P

D

tp

T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

25

VGS/V =

ID/A

20

15

10

5

0

0246810

VDS/V

Fig.5. Typical output characteristics, Tj = 25 ˚C.

ID = f(VDS); parameter V

GS

D=tp/T

10.0

5.0

4.0

3.8

3.6

3.4

3.2

3.0

2.8

2.6

2.4

2.2

Peak Pulsed Drain Current, IDM (A)

100

RDS(on) = VDS/ ID

10

D.C.

1

0.1
1 10 100

Drain-Source Voltage, VDS (V)

100 ms

tp = 10 us

100 us

1 ms
10 ms

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

p

RDS(ON)/mOhm

300
280
260
240
220
200
180
160
140
120
100

2 4 6 8 10 12 14

3.2

3.0

3.4

3.6

3.8

4.0

ID/A

Fig.6. Typical on-state resistance, Tj = 25 ˚C.

R

= f(ID); parameter V

DS(ON)

GS

5.0

July 2000 3 Rev 1.200