Philips BUK854-800A Datasheet

Philips Semiconductors Product Specification

Insulated Gate Bipolar Transistor (IGBT) BUK854-800A

GENERAL DESCRIPTION QUICK REFERENCE DATA

Fast-switching N-channel insulated SYMBOL PARAMETER MAX. UNIT
gate bipolar power transistor in a
plastic envelope. V
The device is intended for use in I
motor control, DC/DC and AC/DC P
converters, and in general purpose V
high frequency switching E

CE

C

tot
CEsat
off

applications.

PINNING - TO220AB PIN CONFIGURATION SYMBOL

Collector-emitter voltage 800 V
Collector current (DC) 12 A
Total power dissipation 85 W
Collector-emitter on-state voltage 3.5 V
Turn-off Energy Loss 0.5 mJ

PIN DESCRIPTION

tab

c

1 gate
2 collector
3 emitter

tab collector

123

g

e

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
±V
I

C

I

C

I

CLM

I

CM

P
T
T

CE
CGR

GE

tot
stg
j

Collector-emitter voltage - -5 800 V
Collector-gate voltage RGE = 20 kΩ - 800 V
Gate-emitter voltage - - 30 V
Collector current (DC) Tmb = 25 ˚C - 12 A
Collector current (DC) Tmb = 100 ˚C - 6 A
Collector Current (Clamped Tj ≤ T

jmax.

-20A
Inductive Load) VCL ≤ 500 V
Collector current (pulsed peak value, Tj ≤ T

jmax.

-30A
on-state)
Total power dissipation Tmb = 25 ˚C - 85 W
Storage temperature - - 55 150 ˚C
Junction Temperature - - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-mb

R

th j-a

October 1994 1 Rev.1.100

Junction to mounting base - - 1.47 K/W
Junction to ambient In free air 60 - K/W

Philips Semiconductors Product Specification

Insulated Gate Bipolar Transistor (IGBT) BUK854-800A

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CES

V

GE(TO)

I

CES

I

CES

I

ECS

I

GES

V

CEsat

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g

fe

C

ies

C

oes

C

res

t

d on

t

r

E

on

t

d off

t

f

E

off

t

d on

t

r

E

on

t

d off

t

f

E

off

Collector-emitter breakdown VGE = 0 V; IC = 0.25 mA 800 - - V
voltage
Gate threshold voltage VCE = VGE; IC = 1 mA 3 4 5.5 V
Zero gate voltage collector VCE = 800 V; VGE = 0 V; Tj = 25 ˚C - 10 100 µA
current
Zero gate voltage collector VCE = 800 V; VGE = 0 V; Tj =125 ˚C - 0.1 1 mA
current
Reverse collector current VCE = -5 V; VGE = 0 V - 0.1 5 mA
Gate emitter leakage current VGE = ±30 V; VCE = 0 V - 10 100 nA
Collector-emitter saturation VGE = 15 V; IC = 6 A - 2.4 3.5 V
voltage VGE = 15 V; IC = 12 A - 3.1 - V

Forward transconductance VCE = 15 V; IC = 3 A 1.5 4 - S
Input capacitance VGE = 0 V; VCE = 25 V; f = 1 MHz - 400 750 pF

Output capacitance - 45 80 pF
Feedback capacitance - 15 40 pF

Turn-on delay time IC = 6 A; VCC = 500 V; - 20 - ns
Turn-on rise time VGE = 15 V; RG = 25Ω; - 30 - ns
Turn-on Energy Loss Tj = 25˚C; - 0.25 - mJ

Turn-off delay time Inductive Load - 170 270 ns
Turn-off fall time Energy Losses include all ’tail’ - 200 400 ns
Turn-off Energy Loss losses - 0.25 0.5 mJ

Turn-on delay time IC = 6 A; VCC = 500 V; - 20 - ns
Turn-on rise time VGE = 15 V; RG = 25Ω; - 30 - ns
Turn-on Energy Loss Tj = 125˚C; - 0.25 - mJ

Turn-off delay time Inductive Load - 200 350 ns
Turn-off fall time Energy Losses include all ’tail’ - 400 800 ns
Turn-off Energy Loss losses - 0.5 1 mJ

October 1994 2 Rev.1.100

Philips Semiconductors Product Specification

Insulated Gate Bipolar Transistor (IGBT) BUK854-800A

Zth j-mb / (K/W)

1E+01

1E+00

D =

0.5

0.2

1E-01

1E-02

1E-03

0.1

0.05

0.02

p

t

P

0

1E-07 1E-05 1E-03 1E-01 1E+01

D

t / s

D =

T

Fig.1. Transient thermal impedance

Z

= f(t) ; parameter D = tp/T

th j-mb

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Normalised Power Derating

Tmb / C

Fig.2. Normalised power dissipation.

PD% = 100.PD/P

D 25˚C

= f(Tmb)

IC / A

30

20

p

t
T

t

10

0

20 15

0 10 20

515

VCE / V

BUK8Y4-800A

10

9

8

7

VGE / V = 6

Fig.4. Typical output characteristics, Tj=25 ˚C.

IC=f(VCE); parameter V

IC / A

30

VGE / V =

20

10

0

135

0 2 4 6

VCEsat / V

GE

BUK8Y4-800A

15

10

Tj / C = 25

150

Fig.5. Typical on-state characteristics

IC=f(VCE); parameters Tj,V

GE

IC / A BUK854-800

100

ICLM

10

1

0.1
0 200 400 600 800 1000

VCE / V

Fig.3. Turn-off Safe Operating Area

conditions: Tj ≤ T

; RG = 50

jmax.

Ω

IC / A

30

Tj / C = 25

150

20

10

0

0 2 4 6 8 10 12

VGE / V

BUK8Y4-800A

Fig.6. Typical transfer characteristics

IC=f(VGE) ; conditions: VCE=15 V; parameter T

j

October 1994 3 Rev.1.100