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Philips Semiconductors Product specification
TrenchMOS transistor BUK78150-55
Standard level FET
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effectpowertransistorina
plastic envelope suitable for surface V
mounting.Using’trench’ technology I
thedevice features very low on-state P
resistance and has integral zener T
diodes giving ESD protection. It is R
DS
D
tot
j
DS(ON)
intended for use in automotive and resistance VGS = 10 V
general purpose switching
applications.
PINNING - SOT223 PIN CONFIGURATION SYMBOL
Drain-source voltage 55 V
Drain current 5.5 A
Total power dissipation 1.8 W
Junction temperature 150 ˚C
Drain-source on-state 150 mΩ
PIN DESCRIPTION
4
d
1 gate
2 drain
3 source
4 drain (tab)
1
23
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
±V
I
D
I
D
I
D
I
DM
P
P
T
DS
DGR
tot
tot
stg
GS
, T
j
Drain-source voltage - - 55 V
Drain-gate voltage RGS = 20 kΩ -55V
Gate-source voltage - - 16 V
Drain current (DC) Tsp = 25 ˚C - 5.5 A
Drain current (DC) On PCB in Fig.19 - 2.6 A
T
= 25 ˚C
amb
Drain current (DC) On PCB in Fig.19 - 1.6 A
T
= 100 ˚C
amb
Drain current (pulse peak value) Tsp = 25 ˚C - 30 A
Total power dissipation Tsp = 25 ˚C - 8.3 W
Total power dissipation On PCB in Fig.19 - 1.8 W
T
= 25 ˚C
amb
Storage & operating temperature - - 55 150 ˚C
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
January 1998 1 Rev 1.000
Electrostatic discharge capacitor Human body model - 2 kV
voltage (100 pF, 1.5 kΩ)
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Philips Semiconductors Product specification
TrenchMOS transistor BUK78150-55
Standard level FET
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-sp
R
th j-amb
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
I
DSS
I
GSS
±V
(BR)GSS
R
DS(ON)
From junction to solder point Mounted on any PCB 12 15 K/W
From junction to ambient Mounted on PCB of Fig.18 - 70 K/W
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 55 - - V
voltage Tj = -55˚C 50 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 2.0 3.0 4.0 V
Tj = 150˚C 1.2 - - V
Tj = -55˚C - - 4.4 V
Zero gate voltage drain current VDS = 55 V; VGS = 0 V; - 0.05 10 µA
Tj = 150˚C - - 100 µA
Gate source leakage current VGS = ±10 V - 0.04 1 µA
Tj = 150˚C - - 10 µA
Gate source breakdown voltage IG = ±1 mA 16 - - V
Drain-source on-state VGS = 10 V; ID = 5 A - 120 150 mΩ
resistance Tj = 150˚C - - 277 mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
C
C
C
t
t
t
t
fs
iss
oss
rss
d on
r
d off
f
Forward transconductance VDS = 25 V; ID = 5 A; Tj = 25˚C 0.5 2.5 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 190 240 pF
Output capacitance - 65 80 pF
Feedback capacitance - 32 45 pF
Turn-on delay time VDD = 30 V; ID = 5 A; - 9 14 ns
Turn-on rise time VGS = 10 V; RG = 10 Ω; - 28 42 ns
Turn-off delay time - 15 23 ns
Turn-off fall time Tj = 25˚C - 8 12 ns
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = -55 to 175˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
I
DRM
V
t
rr
Q
SD
rr
Continuous reverse drain Tsp = 25˚C - - 5.5 A
current
Pulsed reverse drain current Tsp = 25˚C - - 30 A
Diode forward voltage IF = 2 A; VGS = 0 V - 0.85 1.1 V
Reverse recovery time IF = 2 A; -dIF/dt = 100 A/µs; - 43 - ns
Reverse recovery charge VGS = -10 V; VR = 30 V - 0.16 - µC
January 1998 2 Rev 1.000
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Philips Semiconductors Product specification
TrenchMOS transistor BUK78150-55
Standard level FET
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W
DSS
Drain-source non-repetitive ID = 1.9 A; VDD ≤ 25 V; - - 15 mJ
unclamped inductive turn-off VGS = 10 V; RGS = 50 Ω; Tsp = 25 ˚C
energy
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Normalised Power Derating
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
ID%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
= f(Tsp)
D 25 ˚C
Normalised Current Derating
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
= f(Tsp); conditions: VGS ≥ 10 V
D 25 ˚C
100
ID/A
RDS(ON) = VDS/ID
10
1
0.1
11055
DC
VDS/V
BUKX8150-55
tp =
1 us
10 us
100 us
1 ms
10 ms
100 ms
Fig.3. Safe operating area. Tsp = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter t
t
p
T
BUKX8150-55
t
p
D =
T
t
Zth / (K/W)
1E+02
3E+01
1E+01
3E+00
1E+00
3E-01
1E-01
3E-02
1E-02
0.5
0.2
0.1
0.05
0.02
0
1E-07 1E-05 1E-03 1E-01 1E+01
t / s
P
D
Fig.4. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-sp
p
January 1998 3 Rev 1.000