Philips buk7575100a, buk7675 100a DATASHEETS

1. Description

2. Features

BUK7575-100A; BUK7675-100A
TrenchMOS™ standard level FET
Rev. 01 — 24 October 2000 Product specification
N-channel enhancement mode field-effect powertransistorina plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
BUK7575-100A in SOT78 (TO-220AB) BUK7675-100A in SOT404 (D
TrenchMOS™ technology
Q101 compliant
175 °C rated
Standard level compatible.
2
-PAK).

3. Applications

c
c
Automotive and general purpose power switching:
12 V, 24 V and 42 V loads
Motors, lamps and solenoids.

4. Pinning information

Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g) 2 drain (d) 3 source (s) mb mounting base;
connected to drain (d)
MBK106
12mb3
SOT78 (TO-220AB) SOT404 (D2-PAK)
mb
2
13
MBK116
g
MBB076
d
s
Philips Semiconductors
BUK7575-100A; BUK7675-100A
TrenchMOS™ standard level FET

5. Quick reference data

Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V I P T R
DS
D
tot j DSon
drain-source voltage (DC) 100 V drain current (DC) Tmb=25°C; VGS=10V 23 A total power dissipation Tmb=25°C 99 W junction temperature 175 °C drain-source on-state resistance VGS= 10 V; ID=13A
=25°C 75 m
T
j
= 175 °C 187 m
T
j

6. Limiting values

Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
DR
I
DRM
Avalanche ruggedness
W
DSS
drain-source voltage (DC) 100 V drain-gate voltage (DC) RGS=20kΩ−100 V gate-source voltage (DC) −±20 V drain current (DC) Tmb=25°C; VGS=10V;
23 A
Figure 2 and 3
T
= 100 °C; VGS=10V;Figure 2 16.2 A
mb
peak drain current Tmb=25°C; pulsed; tp≤ 10 µs;
92 A
Figure 3
total power dissipation Tmb=25°C; Figure 1 99 W storage temperature 55 +175 °C operating junction temperature 55 +175 °C
reverse drain current (DC) Tmb=25°C 23 A pulsed reverse drain current Tmb=25°C; pulsed; tp≤ 10 µs 92 A
non-repetitive avalanche energy unclamped inductive load; ID=14A;
100 V; VGS=10V; RGS=50Ω;
V
DS
starting T
mb
=25°C
100 mJ
9397 750 07623
Product specification Rev. 01 — 24 October 2000 2 of 15
© Philips Electronics N.V. 2000. All rights reserved.
Philips Semiconductors
BUK7575-100A; BUK7675-100A
TrenchMOS™ standard level FET
120
P
(%)
der
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
P
P
der
tot
----------------------
P
tot 25 C°()
100%×=
03na19
Tmb (oC)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
1000
I
D
(A)
120
I
der (%)
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
03aa24
Tmb (oC)
VGS≥ 4.5 V
I
I
der
D
------------------ -
I
D25C°()
100%×=
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03nb34
100
10
1
1 10 100 1000
R
DSon
= VDS/ I
D
D.C.
tp = 10 us
100 us
1 ms
10 ms
100 ms
P
t
p
VDS (V)
t
p
δ =
T
t
T
Tmb=25°C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07623
© Philips Electronics N.V. 2000. All rights reserved.
Product specification Rev. 01 — 24 October 2000 3 of 15
Philips Semiconductors
BUK7575-100A; BUK7675-100A
TrenchMOS™ standard level FET

7. Thermal characteristics

Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
R
th(j-a)
R
th(j-mb)
thermal resistance from junction to ambient vertical in still air; SOT78 package 60 K/W
mounted on printed circuit board;
50 K/W minimum footprint; SOT404 package
thermal resistance from junction to mounting
Figure 4 1.5 K/W
base

7.1 Transient thermal impedance

Z
th(j-mb)
(K/W)
0.01
0.1
10
1
δ = 0.5
0.2
0.1
0.05
0.02
Single Shot
-6
10
-5
10
-4
10
-3
10
10
P
-2
10
03nb35
t
p
δ =
T
t
p
-1
t
T
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 07623
© Philips Electronics N.V. 2000. All rights reserved.
Product specification Rev. 01 — 24 October 2000 4 of 15
Philips Semiconductors
BUK7575-100A; BUK7675-100A
TrenchMOS™ standard level FET

8. Characteristics

Table 5: Characteristics
Tj=25°C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
V
I
DSS
I
GSS
R
GS(th)
DSon
gate-source threshold voltage ID= 1 mA; VDS=VGS;
drain-source leakage current VDS= 100 V; VGS=0V
gate-source leakage current VGS= ±20 V; VDS=0V 2 100 nA drain-source on-state
resistance
Dynamic characteristics
C C C t
d(on)
t
r
t
d(off)
t
f
L
L
iss oss rss
d
s
input capacitance VGS=0V; VDS=25V; output capacitance 127 150 pF reverse transfer capacitance 78 110 pF turn-on delay time VDD= 30 V; RL= 2.2 ; rise time 39 ns turn-off delay time 26 ns fall time 24 ns internal drain inductance from drain lead 6 mm from
internal source inductance from source lead to source
ID= 0.25 mA; VGS=0V
=25°C 100 −−V
T
j
= 55 °C89−−V
T
j
Figure 9
=25°C234V
T
j
= 175 °C1−−V
T
j
= 55 °C −−4.4 V
T
j
=25°C 0.05 10 µA
T
j
= 175 °C −−500 µA
T
j
VGS=10V; ID=13A;
Figure 7 and 8
=25°C 64 75 mΩ
T
j
= 175 °C −−187 m
T
j
907 1210 pF
f = 1 MHz; Figure 12
8 ns
=10V; RG= 5.6 ;
V
GS
4.5 nH
package to centre of die from contact screw on
3.5 nH mounting base to centre of die SOT78
from upper edge of drain
2.5 nH mounting base to centre of die SOT404
7.5 nH bond pad
9397 750 07623
Product specification Rev. 01 — 24 October 2000 5 of 15
© Philips Electronics N.V. 2000. All rights reserved.
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