Philips BUK7540-100A Datasheet

Philips Semiconductors Product specification

TrenchMOS transistor BUK7540-100A
Standard level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
Standard level field-effect power
transistor in a plastic envelope using V
’trench’ technology which features I
very low on-state resistance. It is P
intended for use in automotive and T
general purpose switching R

DS

D

tot
j

DS(ON)

applications. resistance VGS = 5 V

PINNING - TO220AB PIN CONFIGURATION SYMBOL

Drain-source voltage 100 V
Drain current (DC) 37 A
Total power dissipation 138 W
Junction temperature 175 ˚C
Drain-source on-state 40 mΩ

PIN DESCRIPTION

tab

d

1 gate
2 drain

g

3 source

tab drain

123

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
±V
I

D

I

D

I

DM

P
T

DS
DGR

tot

stg

GS

, T

j

Drain-source voltage - - 100 V
Drain-gate voltage RGS = 20 kΩ - 100 V
Gate-source voltage - - 20 V
Drain current (DC) Tmb = 25 ˚C - 37 A
Drain current (DC) Tmb = 100 ˚C - 26 A
Drain current (pulse peak value) Tmb = 25 ˚C - 149 A
Total power dissipation Tmb = 25 ˚C - 138 W
Storage & operating temperature - - 55 175 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-mb

Thermal resistance junction to - - 1.1 K/W
mounting base

R

th j-a

Thermal resistance junction to in free air 60 - K/W
ambient

December 1999 1 Rev 1.000

Philips Semiconductors Product specification

TrenchMOS transistor BUK7540-100A

Standard level FET

STATIC CHARACTERISTICS

Tj= 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

GSS

R

DS(ON)

DYNAMIC CHARACTERISTICS

Tmb = 25˚C unless otherwise specified

Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 100 - - V
voltage Tj = -55˚C 89 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 2 3 4 V

Tj = 175˚C 1 - - V

Tj = -55˚C - - 4.4 V

Zero gate voltage drain current VDS = 100 V; VGS = 0 V; - 0.05 10 µA

Tj = 175˚C - - 500 µA
Gate source leakage current VGS = ±20 V; VDS = 0 V - 2 100 nA
Drain-source on-state VGS = 10 V; ID = 40 A - 30 40 mΩ
resistance Tj = 175˚C - - 108 mΩ

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

C
C
C

t
t
t
t

L

iss
oss
rss

d on
r
d off
f

d

Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1720 2293 pF
Output capacitance - 216 259 pF
Feedback capacitance - 133 182 pF

Turn-on delay time VDD = 30 V; R

=1.2Ω; - 12 18 ns

load

Turn-on rise time VGS = 5 V; RG = 10 Ω - 5583ns
Turn-off delay time - 48 67 ns
Turn-off fall time - 30 42 ns

Internal drain inductance Measured from contact screw on - 3.5 - nH

tab to centre of die

L

d

Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH

from package to centre of die

L

s

Internal source inductance Measured from source lead 6 mm - 7.5 - nH

from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

I

DRM

V

t

rr

Q

SD

rr

Continuous reverse drain - - 37 A
current
Pulsed reverse drain current - - 149 A
Diode forward voltage IF = 25 A; VGS = 0 V - 0.85 1.2 V

IF = 37 A; VGS = 0 V - 1.1 - V

Reverse recovery time IF = 37 A; -dIF/dt = 100 A/µs; - 70 - ns
Reverse recovery charge VGS = -10 V; VR = 30 V - 0.24 - µC

December 1999 2 Rev 1.000

Philips Semiconductors Product specification

TrenchMOS transistor BUK7540-100A

Standard level FET

AVALANCHE LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

W

DSS

1

Drain-source non-repetitive ID = 26 A; VDD ≤ 25 V; - - 31 mJ
unclamped inductive turn-off VGS = 5 V; RGS = 50 Ω; Tmb = 25 ˚C
energy

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Tmb / C

= f(Tmb)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); VGS ≥ 10 V

D 25 ˚C

1000

ID/A

RDS(ON)=VDS/ID

100

10

1

1

DC

10

VDS/V

tp =
1us

10us

100us

1ms

10ms
100ms

100

Fig.3. Safe operating area

ID & IDM = f(VDS); IDM single pulse; parameter t

10

Zth/(K/W)

1

0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.001

0

1E-07 1E-05 1E-03 1E-01 1E+01

t/s

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

1000

p

1 For maximum permissible repetive avalanche current see fig.18.

December 1999 3 Rev 1.000