Philips buk7528 55a, buk7628 55a DATASHEETS

Philips Semiconductors Product specification

TrenchMOS transistor BUK7528-55A
Standard level FET BUK7628-55A

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope V
available in TO220AB and SOT404 . I
Using ’trench’ technology which P
features very low on-state T
resistance. It is intended for use in R

DS

D

tot
j

DS(ON)

automotive and general purpose resistance V
switching applications.

PINNING TO220AB & SOT404 PIN CONFIGURATION SYMBOL

Drain-source voltage 55 V
Drain current (DC) 41 A
Total power dissipation 99 W
Junction temperature 175 ˚C
Drain-source on-state

= 10 V 28 mΩ

GS

PIN DESCRIPTION

1 gate

mb

tab

d

2 drain

g

s

3 source

tab/mb drain

2

13

SOT404
BUK7628-55A

1

23

TO220AB
BUK7528-55A

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
±V
I

D

I

D

I

DM

P
T

DS
DGR

tot
stg

GS

, T

j

Drain-source voltage - - 55 V
Drain-gate voltage RGS = 20 kΩ -55V
Gate-source voltage - - 20 V
Drain current (DC) Tmb = 25 ˚C - 42 A
Drain current (DC) Tmb = 100 ˚C - 30 A
Drain current (pulse peak value) Tmb = 25 ˚C - 168 A
Total power dissipation Tmb = 25 ˚C - 99 W
Storage & operating temperature - - 55 175 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-mb

Thermal resistance junction to - - 1.5 K/W
mounting base

R

th j-a

Thermal resistance junction to in free air 60 - K/W
ambient(TO220AB)

R

th j-a

Thermal resistance junction to Minimum footprint, FR4 50 - K/W
ambient(SOT404) board

June 2000 1 Rev 1.100

Philips Semiconductors Product specification

TrenchMOS transistor BUK7528-55A
Standard level FET BUK7628-55A

STATIC CHARACTERISTICS

Tj= 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

GSS

R

DS(ON)

DYNAMIC CHARACTERISTICS

Tmb = 25˚C unless otherwise specified

Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 55 - - V
voltage Tj = -55˚C 50 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 2 3 4 V

Tj = 175˚C 1 - - V

Tj = -55˚C - - 4.4 V

Zero gate voltage drain current VDS = 55 V; VGS = 0 V; - 0.05 10 µA

= 175˚C - - 500 µA

T

j

Gate source leakage current VGS = ±20 V; VDS = 0 V - 2 100 nA
Drain-source on-state VGS = 10 V; ID = 25 A - 23.8 28 mΩ
resistance T

= 175˚C - - 56 mΩ

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

C
C
C

t
t
t
t

L

iss
oss
rss

d on
r
d off
f

d

Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 874 1165 pF
Output capacitance - 218 261 pF
Feedback capacitance - 137 188 pF

Turn-on delay time VDD = 30 V; R

=1.2Ω; - 14 21 ns

load

Turn-on rise time VGS = 5 V; RG = 10 Ω - 68 102 ns
Turn-off delay time - 83 116 ns
Turn-off fall time - 43 60 ns

Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH

from package to centre of die

L

d

Internal drain inductance Measured from contact screw on - 3.5 - nH

tab to centre of die(TO220AB)

L

d

Internal drain inductance Measured from upper edge of drain - 2.5 - nH

tab to centre of die(SOT404)

L

s

Internal source inductance Measured from source lead to - 7.5 - nH

source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

I

DRM

V

t

rr

Q

SD

rr

Continuous reverse drain - - 41 A
current
Pulsed reverse drain current - - 163 A
Diode forward voltage IF = 25 A; VGS = 0 V - 0.85 1.2 V

IF = 41 A; VGS = 0 V - 1.1 - V

Reverse recovery time IF = 20 A; -dIF/dt = 100 A/µs; - 4550ns
Reverse recovery charge VGS = -10 V; VR = 30 V - 88 96 nC

June 2000 2 Rev 1.100

Philips Semiconductors Product specification

TrenchMOS transistor BUK7528-55A
Standard level FET BUK7628-55A

AVALANCHE LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

W

DSS

Drain-source non-repetitive ID = 34 A; VDD ≤ 25 V; - - 58 mJ
unclamped inductive turn-off V

= 5 V; RGS = 50 Ω; Tmb = 25 ˚C

GS

energy

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Tmb / C

= f(Tmb)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 5 V

D 25 ˚C

ID / A

1000

RDS(on) = VDS/ ID

100

10

1

1 10 100 1000

D.C.

tp =

10us

100 us

1 ms

10 ms
100 ms

VDS / V

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

Zth / (K/W)

10

D =

0.5

1

0.2

0.1

0.1

0.05

0.02

0

0.01

0.000001 0.0001 0.01 1 100 10000
VDS / V

tp

tp

D=

TPD

Tt

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

p

June 2000 3 Rev 1.100