Philips buk7515 100a DATASHEETS
Philips Semiconductors Product specification
TrenchMOS transistor BUK7515-100A
Standard level FET
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope using V
’trench’ technology which features I
very low on-state resistance. It is P
intended for use in automotive and T
general purpose switching R
DS
D
tot
j
DS(ON)
applications. resistance VGS = 10 V
PINNING - TO220AB PIN CONFIGURATION SYMBOL
Drain-source voltage 100 V
Drain current (DC) 75 A
Total power dissipation 230 W
Junction temperature 175 ˚C
Drain-source on-state 15 mΩ
PIN DESCRIPTION
tab
d
1 gate
2 drain
g
3 source
tab drain
123
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
±V
I
D
I
D
I
DM
P
T
DS
DGR
tot
stg
GS
, T
j
Drain-source voltage - - 100 V
Drain-gate voltage RGS = 20 kΩ - 100 V
Gate-source voltage - - 20 V
Drain current (DC) Tmb = 25 ˚C - 75 A
Drain current (DC) Tmb = 100 ˚C - 53 A
Drain current (pulse peak value) Tmb = 25 ˚C - 240 A
Total power dissipation Tmb = 25 ˚C - 230 W
Storage & operating temperature - - 55 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction to - - 0.65 K/W
mounting base
R
th j-a
Thermal resistance junction to in free air 60 - K/W
ambient
December 1998 1 Rev 1.100
Philips Semiconductors Product specification
TrenchMOS transistor BUK7515-100A
Standard level FET
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
I
DSS
I
GSS
R
DS(ON)
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 100 - - V
voltage Tj = -55˚C 89 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 2 3.0 4.0 V
Tj = 175˚C 1 - - V
Tj = -55˚C - - 4.4 V
Zero gate voltage drain current VDS = 100 V; VGS = 0 V; - 0.05 10 µA
Tj = 175˚C - - 500 µA
Gate source leakage current VGS = ±20 V; VDS = 0 V - 2 100 nA
Drain-source on-state VGS = 10 V; ID = 25 A - 12.0 15.0 mΩ
resistance Tj = 175˚C - - 40.5 mΩ
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
C
C
t
t
t
t
L
iss
oss
rss
d on
r
d off
f
d
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 4500 6000 pF
Output capacitance - 550 660 pF
Feedback capacitance - 305 400 pF
Turn-on delay time VDD = 30 V; R
=1.2Ω; - 35 55 ns
load
Turn-on rise time VGS = 10 V; RG = 10 Ω - 85 125 ns
Turn-off delay time - 150 225 ns
Turn-off fall time - 70 100 ns
Internal drain inductance Measured from contact screw on - 3.5 - nH
tab to centre of die
L
d
Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
L
s
Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
I
DRM
V
t
rr
Q
SD
rr
Continuous reverse drain - - 75 A
current
Pulsed reverse drain current - - 240 A
Diode forward voltage IF = 25 A; VGS = 0 V - 0.85 1.2 V
IF = 75 A; VGS = 0 V - 1.1 - V
Reverse recovery time IF = 75 A; -dIF/dt = 100 A/µs; - 80 - ns
Reverse recovery charge VGS = -10 V; VR = 30 V - 0.35 - µC
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W
DSS
December 1998 2 Rev 1.100
Drain-source non-repetitive ID = 35 A; VDD ≤ 25 V; - - 120 mJ
unclamped inductive turn-off VGS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C
energy
Philips Semiconductors Product specification
TrenchMOS transistor BUK7515-100A
Standard level FET
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Normalised Power Derating
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
ID%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
= f(Tmb)
D 25 ˚C
Normalised Current Derating
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
= f(Tmb); conditions: VGS ≥ 5 V
D 25 ˚C
Zth / (K/W)
P
t/S
D
D =
T
t
T
p
t
p
t
0.1
0.01
0.001
1
D =
0.5
0.2
0.1
0.05
0.02
0
0.00001 0.001 0.1 10
Fig.4. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-mb
300
ID/A
250
200
150
100
50
0
0246810
VGS\V =
VDS/V
7.5
7.0
6.5
6.0
5.5
5.0
4.5
9.010.020.0
8.0
Fig.5. Typical output characteristics, Tj = 25 ˚C
ID = f(VDS); parameter V
GS
.
1000
ID/A
RDS(ON) = VDS/ID
100
10
1
1 10 100
DC
VDS/V
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter t
tp =
1uS
100uS
1mS
10mS
100mS
p
RDS(ON)/mOhm
20
19
18
17
VGS/V =
16
15
14
13
12
11
5.5
6.0
6.5
7.0
8.0
10.0
0 20406080100
ID/A
Fig.6. Typical on-state resistance, Tj = 25 ˚C
R
= f(ID); parameter V
DS(ON)
GS
.
December 1998 3 Rev 1.100
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