Philips BUK583-60A Datasheet

Philips Semiconductors Product specification

PowerMOS transistor BUK583-60A
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
logic level field-effect power
transistor in a plastic envelope V
suitable for surface mount I
applications. P
The device is intended for use in T
automotive and general purpose R

DS

D

tot
j

DS(ON)

switching applications. resistance; VGS = 5 V

PINNING - SOT223 PIN CONFIGURATION SYMBOL

Drain-source voltage 60 V
Drain current (DC) 3.2 A
Total power dissipation 1.8 W
Junction temperature 150 ˚C
Drain-source on-state 0.10 Ω

PIN DESCRIPTION

4

d

1 gate
2 drain
3 source
4 drain (tab)

1

23

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

DGR

±VGSGate-source voltage - - 15 V
I

D

I

D

I

DM

P

tot

T

stg

T

j

Drain-source voltage - - 60 V
Drain-gate voltage RGS = 20 kΩ -60V

Drain current (DC) T
Drain current (DC) T
Drain current (pulse peak value) T
Total power dissipation T

= 25 ˚C - 3.2 A

amb

= 100 ˚C - 2.0 A

amb

= 25 ˚C - 13 A

amb

= 25 ˚C - 1.8 W

amb

Storage temperature - - 55 150 ˚C
Junction temperature - - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R
R

th j-sp
th j-amb

From junction to solder point
From junction to ambient Mounted on PCB of fig.18 - - 70 K/W

1

Mounted on any PCB - 12 15 K/W

1 Temperature measured at solder joint on drain tab.

September 1995 1 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistor BUK583-60A
Logic level FET

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

DSS

I

GSS

R

DS(ON)

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g

fs

C

iss

C

oss

C

rss

t

d on

t

r

t

d off

t

f

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 60 70 - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 1.0 1.5 2.0 V
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; - 1 10 µA
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj = 125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±15 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 5 V; ID = 3.2 A - 0.08 0.10 Ω
resistance

Forward transconductance VDS = 25 V; ID = 3.2 A - 6.0 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 650 825 pF

Output capacitance - 240 350 pF
Feedback capacitance - 120 160 pF

Turn-on delay time VDD = 30 V; ID = 3 A; - 10 20 ns
Turn-on rise time VGS = 5 V; RGS = 50 Ω; - 35 55 ns
Turn-off delay time R
Turn-off fall time - 55 80 ns

= 50 Ω - 6090ns

gen

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

I

DRM

V
t

rr

Q

SD

rr

Continuous reverse drain - - - 3.2 A
current
Pulsed reverse drain current - - - 13 A
Diode forward voltage IF = 3.2 A; VGS = 0 V - 0.85 1.1 V

Reverse recovery time IF = 3.2 A; -dIF/dt = 100 A/µs; - 70 - ns
Reverse recovery charge VGS = -10 V; VR = 30 V - 0.25 - µC

AVALANCHE LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

W

DSS

Drain-source non-repetitive ID = 3.2 A; VDD ≤ 25 V; - - 45 mJ
unclamped inductive turn-off VGS = 5 V; RGS = 50 Ω; T
energy

= 25 ˚C

amb

September 1995 2 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistor BUK583-60A
Logic level FET

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Normalised Power Derating

Tamb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Tamb / C

= f(T

D 25 ˚C

Normalised Current Derating

amb

)

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

D 25 ˚C

= f(T

); conditions: VGS ≥ 5 V

amb

ID / A

100

10

RDS(ON) = VDS/ID

1

DC

0.1

0.01

0.1 1 10 100
VDS / V

Fig.4. Safe operating area T

ID & IDM = f(VDS); IDM single pulse; parameter t

ID / A

10

9
8
7
6
5
4
3
2
1
0

0 1 2

5.0

0.5 1.5

4.5

4.0

3.5

VDS / V

BUK583-60A

tp = 10 us
100 us

1 ms
10 ms

100 ms
1 s

10 s

= 25 ˚C

amb

VGS / V = 3.0

2.5

Fig.5. Typical output characteristics, Tj = 25 ˚C

ID = f(VDS); parameter V

GS

p

.

Zth j-amb / (K/W)

1E+02

D =

0.5

1E+01

1E+00

0.2

0.1

0.05

0.02

t

P

p

D

1E-01

1E-02

0

1E-07 1E-05 1E-03 1E-01 1E+01 1E+03

t / s

T

Fig.3. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-amb

BUKX83

t

D =

T

p

t

Fig.6. Typical on-state resistance, Tj = 25 ˚C

RDS(ON) / Ohm

1.2

1

0.8

0.6

0.4

0.2

0

VGS / V = 2.5

3

0 2 4 6 8 10

R

= f(ID); parameter V

DS(ON)

ID / A

3.5

.

GS

September 1995 3 Rev 1.200