Philips BUK566-60A Datasheet

Philips Semiconductors Product specification

PowerMOS transistor BUK566-60A
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
logic level field-effect power
transistor in a plastic envelope V
suitable for surface mount I
applications. P
The device is intended for use in R
Switched Mode Power Supplies VGS = 5 V

DS

D

tot

DS(ON)

(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in automotive and general purpose
switching applications.

PINNING - SOT404 PIN CONFIGURATION SYMBOL

Drain-source voltage 60 V
Drain current (DC) 50 A
Total power dissipation 150 W
Drain-source on-state resistance 26 mΩ

PIN DESCRIPTION

mb

d

1 gate
2 drain
3 source

mb drain

2

13

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

DGR

±VGSGate-source voltage - - 15 V
±V

GSM

I

D

I

D

I

DM

P

tot

T

stg

T

j

Drain-source voltage - - 60 V
Drain-gate voltage RGS = 20 kΩ -60V

Non-repetitive gate-source voltage tp ≤ 50 µs - 20 V
Drain current (DC) Tmb = 25 ˚C - 50 A
Drain current (DC) Tmb = 100 ˚C - 38 A
Drain current (pulse peak value) Tmb = 25 ˚C - 200 A
Total power dissipation Tmb = 25 ˚C - 150 W
Storage temperature - - 55 175 ˚C
Junction temperature - - 175 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R
R

th j-mb

th j-a

Thermal resistance junction to - - 1.0 K/W
mounting base
Thermal resistance junction to minimum footprint, - 50 - K/W
ambient FR4 boards (see. Fig 18).

February 1996 1 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor BUK566-60A
Logic level FET

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

DSS

I

GSS

R

DS(ON)

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g

fs

C

iss

C

oss

C

rss

t

d on

t

r

t

d off

t

f

L

d

L

s

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 60 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 1.0 1.5 2.0 V
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±15 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 5 V; ID = 25 A - 20 26 mΩ
resistance

Forward transconductance VDS = 25 V; ID = 25 A 17 30 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 2200 2800 pF

Output capacitance - 700 1000 pF
Feedback capacitance - 280 400 pF

Turn-on delay time VDD = 30 V; ID = 3 A; - 40 50 ns
Turn-on rise time VGS = 5 V; - 150 250 ns
Turn-off delay time RGS = 50 Ω; - 350 450 ns
Turn-off fall time R

= 50 Ω - 190 250 ns

gen

Internal drain inductance Measured from upper edge of drain - 2.5 - nH

tab to centre of die

Internal source inductance Measured from source lead - 7.5 - nH

soldering point to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

I

DRM

V
t

rr

Q

SD

rr

Continuous reverse drain - - - 50 A
current
Pulsed reverse drain current - - - 200 A
Diode forward voltage IF = 50 A ; VGS = 0 V - 1.1 2.0 V

Reverse recovery time IF = 50 A; -dIF/dt = 100 A/µs; - 80 - ns
Reverse recovery charge VGS = 0 V; VR = 30 V - 0.4 - µC

AVALANCHE LIMITING VALUE

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

W

DSS

Drain-source non-repetitive ID = 25 A ; VDD ≤ 25 V ; - - 150 mJ
unclamped inductive turn-off VGS = 5 V ; RGS = 50 Ω
energy

February 1996 2 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor BUK566-60A
Logic level FET

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID / IDmax % Normalised Current Derating

120

100

80

60

40

20

0

0 20 40 60 80 100 120 140 160 180

Tmb / C

D 25 ˚C

= f(Tmb)

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 10 V

D 25 ˚C

10

1

0.1

0.01

0.001

Zth j-mb / (K/W)

D =

0.5

0.2

0.1

0.05

0.02

0

1E-05 1E-03 1E-01 1E+01

t / s

P

D

BUKx56-lv

p

p

t

t

D =

T

t

T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

ID / A BUK5y6-60A

150

10

8

100

50

0

0 2 4 6 8 10 12

7

VGS / V =

6

5

4.5
4

3.5
3

2.5

VDS / V

Fig.5. Typical output characteristics, Tj = 25 ˚C

ID = f(VDS); parameter V

GS

.

ID / A

1000

100

RDS(ON) = VDS/ID

10

1

1 100

DC

10

VDS / V

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

BUK556-60A

tp = 10 us

100 us

1 ms
10 ms

100 ms

RDS(ON) / Ohm

0.1

0.08

0.06

0.04

0.02

0

3 3.5 4

0 20 40 60 80 100 120 140

ID / A

Fig.6. Typical on-state resistance, Tj = 25 ˚C

R

p

= f(ID); parameter V

DS(ON)

BUK5y6-60A

4.5 5

6

7

VGS / V = 10

.

GS

February 1996 3 Rev 1.000