Philips BUK564-60H Datasheet

Philips Semiconductors Product specification

PowerMOS transistor BUK564-60H
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effectpower transistor in a
plastic envelope suitable for surface V
mount applications. I
The device is intended for use in P
automotive and general purpose T
switching applications. R

DS

D

tot
j

DS(ON)

PINNING - SOT404 PIN CONFIGURATION SYMBOL

Drain-source voltage 60 V
Drain current (DC) 39 A
Total power dissipation 125 W
Junction temperature 175 ˚C
Drain-source on-state 42 mΩ
resistance; VGS = 5 V

PIN DESCRIPTION

mb

d

1 gate
2 drain

g

3 source

mb drain

2

13

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

DGR

±VGSGate-source voltage - - 15 V
±V

GSM

I

D

I

D

I

DM

P

tot

T

stg

T

j

Drain-source voltage - - 60 V
Drain-gate voltage RGS = 20 kΩ -60V

Non-repetitive gate-source tp ≤ 50 µs - 20 V
voltage
Drain current (DC) Tmb = 25 ˚C - 39 A
Drain current (DC) Tmb = 100 ˚C - 28 A
Drain current (pulse peak value) Tmb = 25 ˚C - 156 A
Total power dissipation Tmb = 25 ˚C - 125 W
Storage temperature - - 55 175 ˚C
Junction temperature - - 175 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-mb

R

th j-a

August 1996 1 Rev 1.000

Thermal resistance junction to - 1.2 K/W
mounting base
Thermal resistance junction to Minimum footprint, 50 - K/W
ambient FR4 board

Philips Semiconductors Product specification

PowerMOS transistor BUK564-60H
Logic level FET

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

DSS

I

GSS

R

DS(ON)

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g

fs

C

iss

C

oss

C

rss

t

d on

t

r

t

d off

t

f

L

d

L

s

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 60 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 1.0 1.5 2.0 V
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±15 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 5 V; ID = 20 A - 35 42 mΩ
resistance

Forward transconductance VDS = 25 V; ID = 20 A 10 18 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1100 1750 pF

Output capacitance - 420 600 pF
Feedback capacitance - 160 275 pF

Turn-on delay time VDD = 30 V; ID = 3 A; - 25 40 ns
Turn-on rise time VGS = 5 V; RGS = 50 Ω; - 110 150 ns
Turn-off delay time R

= 50 Ω - 150 220 ns

gen

Turn-off fall time - 100 145 ns
Internal drain inductance Measured from upper edge of drain - 2.5 - nH

tab to centre of die

Internal source inductance Measured from source lead - 7.5 - nH

soldering point to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

Continuous reverse drain - - - 39 A
current

I

DRM

V
t

rr

Q

SD

rr

Pulsed reverse drain current - - - 156 A
Diode forward voltage IF = 39 A ; VGS = 0 V - 0.95 2.0 V

Reverse recovery time IF = 39 A; -dIF/dt = 100 A/µs; - 60 - ns
Reverse recovery charge VGS = 0 V; VR = 30 V - 0.30 - µC

AVALANCHE LIMITING VALUE

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

W

DSS

August 1996 2 Rev 1.000

Drain-source non-repetitive ID = 39 A ; VDD ≤ 25 V ; - - 90 mJ
unclamped inductive turn-off VGS = 5 V ; RGS = 50 Ω
energy

Philips Semiconductors Product specification

PowerMOS transistor BUK564-60H
Logic level FET

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Tmb / C

= f(Tmb)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 5 V

D 25 ˚C

Zth(j-mb) K/W

10

D =

1

0.5

0.2

0.1

0.1

0.05

0.02

tp / sec

P

D

0.01
0

0.001
1E-07 1E-05 1E-03 1E-01 1E+01

p

t

T

BUK464-60H

p

t

D =

T

t

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

ID / A

100

80

60

40

20

0

012345

VGS / V =

Fig.5. Typical output characteristics, Tj = 25 ˚C

ID = f(VDS); parameter V

BUK564-60H

810

6

5

4.5
4

3.5
3

2.5

VDS / V

.

GS

1000

100

ID / A

RDS(ON) = VDS/ID

BUK564-60H

tp =

10 us

100 us

RDS(ON) / Ohm

0.1

2.5 3 3.5 4 4.5

0.08

0.06

BUK564-60H

5

VGS / V =

6

8

0.04

10

DC

1

1 10 100

VDS / V

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

1 ms
10 ms

100 ms

10

0.02

0

0 20 40 60 80 100

ID / A

Fig.6. Typical on-state resistance, Tj = 25 ˚C

R

p

= f(ID); parameter V

DS(ON)

GS

.

August 1996 3 Rev 1.000