Philips BUK563-80B Datasheet
Philips Semiconductors Product specification
PowerMOS Transistor BUK563-80B
Logic level FET
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
logic level field-effect power
transistor in a plastic envelope. V
The device is intended for use in I
Switched Mode Power Supplies P
(SMPS), motor control, welding, T
DC/DC and AC/DC converters, and R
DS
D
tot
j
DS(ON)
in automotive and general purpose resistance VGS = 5 V
switching applications.
PINNING - SOT404 PIN CONFIGURATION SYMBOL
Drain-source voltage 80 V
Drain current (DC) 16 A
Total power dissipation 75 W
Junction temperature 175 ˚C
Drain-source on-state 0.155 Ω
PIN DESCRIPTION
mb
d
1 gate
2 drain
3 source
mb drain
2
13
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
DGR
±VGSGate-source voltage - - 15 V
I
D
I
D
I
DM
P
tot
T
stg
T
j
Drain-source voltage - - 80 V
Drain-gate voltage RGS = 20 kΩ -80V
Drain current (DC) Tmb = 25 ˚C - 16 A
Drain current (DC) Tmb = 100 ˚C - 11 A
Drain current (pulse peak value) Tmb = 25 ˚C - 64 A
Total power dissipation Tmb = 25 ˚C - 75 W
Storage temperature - - 55 175 ˚C
Junction temperature - - 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
R
th j-mb
th j-a
Thermal resistance junction to - 1.2 K/W
mounting base
Thermal resistance junction to minimum footprint, FR4 board 50 - K/W
ambient (see Fig. 18)
February 1996 1 Rev 1.000
Philips Semiconductors Product specification
PowerMOS Transistor BUK563-80B
Logic level FET
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
I
DSS
I
DSS
I
GSS
R
DS(ON)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
C
iss
C
oss
C
rss
t
d on
t
r
t
d off
t
f
L
d
L
s
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 80 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 1.0 1.5 2.0 V
Zero gate voltage drain current VDS = 80 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA
Zero gate voltage drain current VDS = 80 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±15 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 5 V; ID = 8 A - 0.13 0.155 Ω
resistance
Forward transconductance VDS = 25 V; ID = 8 A 6.5 9.0 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 700 825 pF
Output capacitance - 240 350 pF
Feedback capacitance - 130 160 pF
Turn-on delay time VDD = 30 V; ID = 3 A; - 20 30 ns
Turn-on rise time VGS = 5 V; RGS = 50 Ω; - 95 120 ns
Turn-off delay time R
Turn-off fall time - 65 85 ns
= 50 Ω - 80 110 ns
gen
Internal drain inductance Measured from upper edge of drain - 2.5 - nH
tab to centre of die
Internal source inductance Measured from source lead solder - 7.5 - nH
point to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
I
DRM
V
t
rr
Q
SD
rr
Continuous reverse drain - - - 16 A
current
Pulsed reverse drain current - - - 64 A
Diode forward voltage IF = 16 A ; VGS = 0 V - 1.3 1.7 V
Reverse recovery time IF = 16 A; -dIF/dt = 100 A/µs; - 120 - ns
Reverse recovery charge VGS = 0 V; VR = 30 V - 0.15 - µC
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W
DSS
Drain-source non-repetitive ID = 16 A ; VDD ≤ 40 V ; - - 45 mJ
unclamped inductive turn-off Tmb = 25 ˚C; VGS = 5 V ; RGS = 50 Ω
energy
February 1996 2 Rev 1.000
Philips Semiconductors Product specification
PowerMOS Transistor BUK563-80B
Logic level FET
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Normalised Power Derating
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
ID%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
= f(Tmb)
D 25 ˚C
Normalised Current Derating
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
= f(Tmb); conditions: VGS ≥ 5 V
D 25 ˚C
Zth j-mb / (K/W)
1E+01
1E+00
1E-01
1E-02
0.5
0.2
0.1
0.05
t / s
P
D
0.02
0
1E-07 1E-05 1E-03 1E-01 1E+01
ZTHX53
p
t
p
t
D =
T
t
T
Fig.4. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-mb
ID / A
50
VGS / V =
40
30
20
10
0
0 2 4 6 8 10
10
7
VDS / V
BUK5y3-80B
5
4
3
Fig.5. Typical output characteristics, Tj = 25 ˚C
ID = f(VDS); parameter V
GS
.
ID / A
100
10
1
0.1
1 100
RDS(ON) = VDS/ID
DC
10
VDS / V
BUK553-80B
tp = 10 us
100 us
1 ms
10 ms
100 ms
1000
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter t
RDS(ON) / Ohm
0.5
0.4
0.3
0.2
0.1
0
3
2.5
0 20 40
3.5
4
4.5
ID / A
Fig.6. Typical on-state resistance, Tj = 25 ˚C
R
p
= f(ID); parameter V
DS(ON)
BUK5y3-80B
5
VGS / V =
7
10
.
GS
February 1996 3 Rev 1.000
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