Philips BUK563-48C Datasheet

Philips Semiconductors Product specification

PowerMOS transistor BUK563-48C
Voltage clamped logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA

Protected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNIT
mode logic level field-effect power
transistor in a plastic envelope V
suitable for surface mount I
applications. P
The device is intended for use in T
automotive applications. It has W

(CL)DSR

D

tot
j

DSRR

built-in zenerdiodesproviding active energy; Tj = 150˚C
drain voltage clamping. R

DS(ON)

PINNING - SOT404 PIN CONFIGURATION SYMBOL

Drain-source clamp voltage 40 48 58 V
Drain current (DC) 21 A
Total power dissipation 75 W
Junction temperature 175 ˚C
Repetitive clamped turn off 50 mJ

Drain-source on-state 85 mΩ
resistance; VGS = 5 V

PIN DESCRIPTION

mb

d

1 gate
2 drain
3 source

tab drain

2

13

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
±V
I

D

I

D

I

DM

P
T
T

DS
DG

GS

tot
stg
j

Drain-source voltage continuous - 30 V
Drain-gate voltage continuous - 30 V
Gate-source voltage - - 15 V
Drain current (DC) Tmb = 25 ˚C - 21 A
Drain current (DC) Tmb = 100 ˚C - 15 A
Drain current (pulse peak Tmb = 25 ˚C - 84 A
value)
Total power dissipation Tmb = 25 ˚C - 75 W
Storage temperature - - 55 175 ˚C
Junction temperature - - 55 175 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

R

th j-a

February 1996 1 Rev 1.000

Thermal resistance junction to with heatsink compound - - 2 K/W
heatsink
Thermal resistance junction to minimum footprint, - 50 - K/W
ambient FR4 board (see fig. 18)

Philips Semiconductors Product specification

PowerMOS transistor BUK563-48C

Voltage clamped logic level FET

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DG

V

GS(TO)

V

GS(ON)

I

DSS

I

GSS

R

DS(ON)

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(CL)DSR

g

fs

C

iss

C

oss

C

rss

t

d on

t

r

t

d off

t

f

L

d

L

s

Drain-gate zener voltage 0.2 < -IG < 0.4 mA; 38 45 54 V

-55˚C < Tj < 150˚C
Gate threshold voltage VDS = VGS; ID = 1 mA 1.0 1.5 2.0 V
Gate voltage VDS = 10 V; ID = 10 A; 2.0 3.1 4.0 V

-55˚C < Tj < 150˚C
Zero gate voltage drain current VDS = 30 V; VGS = 0 V; Tj =150 ˚C - 0.01 1.0 mA
Gate source leakage current VGS = ±15 V; VDS = 0 V; Tj =150 ˚C - 0.1 10 µA
Drain-source on-state VGS = 5 V; ID = 10 A - 65 85 mΩ
resistance

Drain source clamp voltage RG = 10 kΩ; ID = 10 A; 40 48 58 V
(peak value) -55 < Tj < 150˚C; Inductive load.

Forward transconductance VDS = 25 V; ID = 10 A 7 12 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 550 825 pF

Output capacitance - 240 350 pF
Feedback capacitance - 100 160 pF

Turn-on delay time VDD = 12 V; ID = 5 A; - 3.5 - µs
Turn-on rise time VGS = 5 V; RG = 10 kΩ; - 22 - µs
Turn-off delay time - 16 - µs
Turn-off fall time - 18 - µs

Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH

from package to centre of die

Internal source inductance Measured from source lead 6 mm - 7.5 - nH

from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

I

DRM

V

SD

February 1996 2 Rev 1.000

Continuous reverse drain - - - 21 A
current
Pulsed reverse drain current - - - 84 A
Diode forward voltage IF = 21 A ; VGS = 0 V - 1.3 1.7 V

Philips Semiconductors Product specification

PowerMOS transistor BUK563-48C

Voltage clamped logic level FET

CLAMPED ENERGY LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

W

W

DSRS

DSRR

Non-repetitive drain-source Tj = 25˚C prior to clamping; - 200 mJ
clamped inductive turn off ID = 10 A; VDD < 16 V; VGS = 5 V;
energy RG = 10 kΩ; inductive load

Drain-source repetitive clamped Tj = 150˚C prior to clamping; - 50 mJ
inductive turn off energy ID = 10 A; VDD < 16 V; VGS = 5 V;

RG = 10 kΩ; inductive load

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID / A

100

RDS(ON) = VDS/ID

10

DC

Self-clamped

1

1 100

10

VDS / V

D 25 ˚C

= f(Tmb)

BUK553-48C

tp =

10 us

100 us

1 ms

10 ms
100 ms

Fig.2. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Normalised Current Derating

Tmb / C

Fig.3. Normalised continuous drain current.

ID% = 100⋅ID/I

Zth j-mb / (K/W)

1E+01

1E+00

1E-01

1E-02

0.5

0.2

0.1

0.05

0.02

0

1E-07 1E-05 1E-03 1E-01 1E+01

= f(Tmb); conditions: VGS ≥ 5 V

D 25 ˚C

t

P

p

D

T

t / s

ZTHX53

t

D =

T

p

t

Fig.4. Transient thermal impedance.

Z

p

= f(t); parameter D = tp/T

th j-mb

February 1996 3 Rev 1.000