Philips BUK556-60A Datasheet
Philips Semiconductors Product Specification
PowerMOS transistor BUK556-60A
Logic level FET
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
logic level field-effect power
transistor in a plastic envelope. V
The device is intended for use in I
Switched Mode Power Supplies P
(SMPS), motor control, welding, R
DC/DC and AC/DC converters, and VGS = 5 V
DS
D
tot
DS(ON)
in automotive and general purpose
switching applications.
PINNING - TO220AB PIN CONFIGURATION SYMBOL
Drain-source voltage 60 V
Drain current (DC) 50 A
Total power dissipation 150 W
Drain-source on-state resistance 26 mΩ
PIN DESCRIPTION
tab
d
1 gate
2 drain
3 source
tab drain
123
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
DGR
±VGSGate-source voltage - - 15 V
±V
GSM
I
D
I
D
I
DM
P
tot
T
stg
T
j
Drain-source voltage - - 60 V
Drain-gate voltage RGS = 20 kΩ -60V
Non-repetitive gate-source voltage tp ≤ 50 µs - 20 V
Drain current (DC) Tmb = 25 ˚C - 50 A
Drain current (DC) Tmb = 100 ˚C - 38 A
Drain current (pulse peak value) Tmb = 25 ˚C - 200 A
Total power dissipation Tmb = 25 ˚C - 150 W
Storage temperature - - 55 175 ˚C
Junction Temperature - - 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction to - - 1.0 K/W
mounting base
R
th j-a
Thermal resistance junction to - 60 - K/W
ambient
April 1993 1 Rev 1.100
Philips Semiconductors Product Specification
PowerMOS transistor BUK556-60A
Logic level FET
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
I
DSS
I
DSS
I
GSS
R
DS(ON)
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
C
iss
C
oss
C
rss
t
d on
t
r
t
d off
t
f
L
d
L
d
L
s
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 60 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 1.0 1.5 2.0 V
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±15 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 5 V; ID = 25 A - 20 26 mΩ
resistance
Forward transconductance VDS = 25 V; ID = 25 A 17 30 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 2200 2800 pF
Output capacitance - 700 1000 pF
Feedback capacitance - 280 400 pF
Turn-on delay time VDD = 30 V; ID = 3 A; - 40 50 ns
Turn-on rise time VGS = 5 V; - 150 250 ns
Turn-off delay time RGS = 50 Ω; - 350 450 ns
Turn-off fall time R
= 50 Ω - 190 250 ns
gen
Internal drain inductance Measured from contact screw on - 5 - nH
tab to centre of die
Internal drain inductance Measured from drain lead 6 mm - 5 - nH
from package to centre of die
Internal source inductance Measured from source lead 6 mm - 12.5 - nH
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
I
DRM
V
t
rr
Q
SD
rr
Continuous reverse drain - - - 50 A
current
Pulsed reverse drain current - - - 200 A
Diode forward voltage IF = 50 A ; VGS = 0 V - 1.1 2.0 V
Reverse recovery time IF = 50 A; -dIF/dt = 100 A/µs; - 80 - ns
Reverse recovery charge VGS = 0 V; VR = 30 V - 0.4 - µC
AVALANCHE LIMITING VALUE
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W
DSS
April 1993 2 Rev 1.100
Drain-source non-repetitive ID = 25 A ; VDD ≤ 25 V ; - - 150 mJ
unclamped inductive turn-off VGS = 5 V ; RGS = 50 Ω
energy
Philips Semiconductors Product Specification
PowerMOS transistor BUK556-60A
Logic level FET
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Normalised Power Derating
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
ID / IDmax % Normalised Current Derating
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
D 25 ˚C
= f(Tmb)
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
= f(Tmb); conditions: VGS ≥ 10 V
D 25 ˚C
10
1
0.1
0.01
0.001
Zth j-mb / (K/W)
D =
0.5
0.2
0.1
0.05
0.02
0
1E-05 1E-03 1E-01 1E+01
t / s
P
D
BUKx56-lv
p
p
t
t
D =
T
t
T
Fig.4. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-mb
ID / A BUK5y6-60A
150
10
8
100
50
0
0 2 4 6 8 10 12
7
VGS / V =
6
5
4.5
4
3.5
3
2.5
VDS / V
Fig.5. Typical output characteristics, Tj = 25 ˚C
ID = f(VDS); parameter V
GS
.
ID / A
1000
100
RDS(ON) = VDS/ID
10
1
1 100
DC
10
VDS / V
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter t
BUK556-60A
tp = 10 us
100 us
1 ms
10 ms
100 ms
RDS(ON) / Ohm
0.1
0.08
0.06
0.04
0.02
0
3 3.5 4
0 20 40 60 80 100 120 140
ID / A
Fig.6. Typical on-state resistance, Tj = 25 ˚C
R
p
= f(ID); parameter V
DS(ON)
BUK5y6-60A
4.5 5
6
7
VGS / V = 10
.
GS
April 1993 3 Rev 1.100
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