Philips BUK555-60H Datasheet

Philips Semiconductors Product specification

PowerMOS transistor BUK555-60H
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistor in
a plastic envelope. V
The device is intended for use in I
Automotive applications, Switched P
Mode Power Supplies (SMPS), T
motor control, welding, DC/DC and R

DS

D

tot
j

DS(ON)

AC/DC converters, and in general resistance; VGS = 5 V
purpose switching applications.

PINNING - TO220AB PIN CONFIGURATION SYMBOL

Drain-source voltage 60 V
Drain current (DC) 41 A
Total power dissipation 125 W
Junction temperature 175 ˚C
Drain-source on-state 38 mΩ

PIN DESCRIPTION

tab

d

1 gate
2 drain

g

3 source

tab drain

123

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

DGR

±VGSGate-source voltage - - 15 V
±V

GSM

I

D

I

D

I

DM

P

tot

T

stg

T

j

Drain-source voltage - - 60 V
Drain-gate voltage RGS = 20 kΩ -60V

Non-repetitive gate-source tp ≤ 50 µs - 20 V
voltage
Drain current (DC) Tmb = 25 ˚C - 41 A
Drain current (DC) Tmb = 100 ˚C - 29 A
Drain current (pulse peak value) Tmb = 25 ˚C - 164 A
Total power dissipation Tmb = 25 ˚C - 125 W
Storage temperature - - 55 175 ˚C
Junction Temperature - - 175 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-mb

R

th j-a

August 1994 1 Rev 1.000

Thermal resistance junction to - 1.2 K/W
mounting base
Thermal resistance junction to 60 - K/W
ambient

Philips Semiconductors Product specification

PowerMOS transistor BUK555-60H
Logic level FET

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

DSS

I

GSS

R

DS(ON)

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g

fs

C

iss

C

oss

C

rss

t

d on

t

r

t

d off

t

f

L

d

L

d

L

s

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 60 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 1.0 1.5 2.0 V
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±15 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 5 V; ID = 20 A - 25 38 mΩ
resistance

Forward transconductance VDS = 25 V; ID = 20 A 11 20 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1200 1750 pF

Output capacitance - 470 600 pF
Feedback capacitance - 180 275 pF

Turn-on delay time VDD = 30 V; ID = 3 A; - 25 40 ns
Turn-on rise time VGS = 5 V; RGS = 50 Ω; - 120 150 ns
Turn-off delay time R

= 50 Ω - 160 220 ns

gen

Turn-off fall time - 110 145 ns
Internal drain inductance Measured from contact screw on - 3.5 - nH

tab to centre of die

Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH

from package to centre of die

Internal source inductance Measured from source lead 6 mm - 7.5 - nH

from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

Continuous reverse drain - - - 41 A
current

I

DRM

V
t

rr

Q

SD

rr

Pulsed reverse drain current - - - 164 A
Diode forward voltage IF = 41 A ; VGS = 0 V - 0.95 2.0 V

Reverse recovery time IF = 41 A; -dIF/dt = 100 A/µs; - 60 - ns
Reverse recovery charge VGS = 0 V; VR = 30 V - 0.30 - µC

AVALANCHE LIMITING VALUE

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

W

DSS

August 1994 2 Rev 1.000

Drain-source non-repetitive ID = 41 A ; VDD ≤ 25 V ; - - 90 mJ
unclamped inductive turn-off VGS = 5 V ; RGS = 50 Ω
energy

Philips Semiconductors Product specification

PowerMOS transistor BUK555-60H
Logic level FET

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Tmb / C

= f(Tmb)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 5 V

D 25 ˚C

Zth j-mb / (K/W)

10

D =

1

0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.001

0

1E-07 1E-05 1E-03 1E-01 1E+01

t / s

P

D

BUKx55-lv

p

p

t

t

D =

T

t

T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

ID / A

100

80

60

40

20

0

0246810

10

15

6

VDS / V

BUK5Y5-60H

5

4.5

4

3.5

3

VGS / V = 2.5

Fig.5. Typical output characteristics, Tj = 25 ˚C

ID = f(VDS); parameter V

GS

.

ID / A

1000

100

RDS(ON) = VDS/ID

10

1

1 100

DC

10

VDS / V

BUK555-60H

tp =
10 us

100 us

1 ms
10 ms

100 ms

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

RDS(ON) / Ohm

0.2

0.15

0.1

0.05

0

0 20 40 60 80 100

3

43.52.5

ID / A

Fig.6. Typical on-state resistance, Tj = 25 ˚C

R

p

= f(ID); parameter V

DS(ON)

BUK5Y5-60H

4.5
VGS / V = 5

10

6

15

.

GS

August 1994 3 Rev 1.000