Philips BUK554-60H Datasheet
Philips Semiconductors Product specification
PowerMOS transistor BUK554-60H
Logic level FET
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effectpower transistor in a
plastic envelope V
The device is intended for use in I
automotive and general purpose P
switching applications. T
D
R
DS
tot
j
DS(ON)
PINNING - TO220AB PIN CONFIGURATION SYMBOL
Drain-source voltage 60 V
Drain current (DC) 39 A
Total power dissipation 125 W
Junction temperature 175 ˚C
Drain-source on-state 42 mΩ
resistance; VGS = 5 V
PIN DESCRIPTION
tab
d
1 gate
2 drain
g
3 source
tab drain
123
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
DGR
±VGSGate-source voltage - - 15 V
±V
GSM
I
D
I
D
I
DM
P
tot
T
stg
T
j
Drain-source voltage - - 60 V
Drain-gate voltage RGS = 20 kΩ -60V
Non-repetitive gate-source tp ≤ 50 µs - 20 V
voltage
Drain current (DC) Tmb = 25 ˚C - 39 A
Drain current (DC) Tmb = 100 ˚C - 28 A
Drain current (pulse peak value) Tmb = 25 ˚C - 156 A
Total power dissipation Tmb = 25 ˚C - 125 W
Storage temperature - - 55 175 ˚C
Junction temperature - - 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
August 1996 1 Rev 1.000
Thermal resistance junction to - 1.2 K/W
mounting base
Thermal resistance junction to 60 - K/W
ambient
Philips Semiconductors Product specification
PowerMOS transistor BUK554-60H
Logic level FET
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
I
DSS
I
DSS
I
GSS
R
DS(ON)
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
C
iss
C
oss
C
rss
t
d on
t
r
t
d off
t
f
L
d
L
d
L
s
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 60 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 1.0 1.5 2.0 V
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±15 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 5 V; ID = 20 A - 35 42 mΩ
resistance
Forward transconductance VDS = 25 V; ID = 20 A 10 18 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1100 1750 pF
Output capacitance - 420 600 pF
Feedback capacitance - 160 275 pF
Turn-on delay time VDD = 30 V; ID = 3 A; - 25 40 ns
Turn-on rise time VGS = 5 V; RGS = 50 Ω; - 110 150 ns
Turn-off delay time R
= 50 Ω - 150 220 ns
gen
Turn-off fall time - 100 145 ns
Internal drain inductance Measured from contact screw on - 3.5 - nH
tab to centre of die
Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
Continuous reverse drain - - - 39 A
current
I
DRM
V
t
rr
Q
SD
rr
Pulsed reverse drain current - - - 156 A
Diode forward voltage IF = 39 A ; VGS = 0 V - 0.95 2.0 V
Reverse recovery time IF = 39 A; -dIF/dt = 100 A/µs; - 60 - ns
Reverse recovery charge VGS = 0 V; VR = 30 V - 0.30 - µC
AVALANCHE LIMITING VALUE
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W
DSS
August 1996 2 Rev 1.000
Drain-source non-repetitive ID = 39 A ; VDD ≤ 25 V ; - - 90 mJ
unclamped inductive turn-off VGS = 5 V ; RGS = 50 Ω
energy
Philips Semiconductors Product specification
PowerMOS transistor BUK554-60H
Logic level FET
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Normalised Power Derating
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
ID%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
= f(Tmb)
D 25 ˚C
Normalised Current Derating
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
= f(Tmb); conditions: VGS ≥ 5 V
D 25 ˚C
Zth(j-mb) K/W
10
D =
1
0.5
0.2
0.1
0.1
0.05
0.02
tp / sec
P
D
0.01
0
0.001
1E-07 1E-05 1E-03 1E-01 1E+01
p
t
T
BUK464-60H
p
t
D =
T
t
Fig.4. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-mb
ID / A
100
80
60
40
20
0
012345
VGS / V =
Fig.5. Typical output characteristics, Tj = 25 ˚C
ID = f(VDS); parameter V
BUK564-60H
810
6
5
4.5
4
3.5
3
2.5
VDS / V
.
GS
1000
100
ID / A
RDS(ON) = VDS/ID
BUK564-60H
tp =
10 us
100 us
RDS(ON) / Ohm
0.1
2.5 3 3.5 4 4.5
0.08
0.06
BUK564-60H
5
VGS / V =
6
8
0.04
10
DC
1
1 10 100
VDS / V
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter t
1 ms
10 ms
100 ms
10
0.02
0
0 20 40 60 80 100
ID / A
Fig.6. Typical on-state resistance, Tj = 25 ˚C
R
p
= f(ID); parameter V
DS(ON)
GS
.
August 1996 3 Rev 1.000
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