Philips BUK543-100B, BUK543-100A Datasheet

Philips Semiconductors Product Specification

PowerMOS transistor BUK543-100A/B
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
logic level field-effect power
transistor in a plastic full-pack BUK543 -100A -100B
envelope. V
The device is intended for use in I
Switched Mode Power Supplies P
(SMPS), motor control, welding, R

DS

D

tot

DS(ON)

DC/DC and AC/DC converters, and resistance; VGS = 5 V
in automotive and general purpose
switching applications.

PINNING - SOT186 PIN CONFIGURATION SYMBOL

Drain-source voltage 100 100 V
Drain current (DC) 8.3 7.5 A
Total power dissipation 25 25 W
Drain-source on-state 0.18 0.22 Ω

PIN DESCRIPTION

case

d

1 gate
2 drain
3 source

case isolated

123

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V

±V
±V

I

D

I

D

I

DM

P
T
T

DS
DGR

GS
GSM

tot
stg
j

Drain-source voltage - - 100 V
Drain-gate voltage RGS = 20 kΩ - 100 V
Gate-source voltage - - 15 V
Non-repetitive gate-source voltage tp ≤ 50 µs - 20 V

-100A -100B

Drain current (DC) Ths = 25 ˚C - 8.3 7.5 A
Drain current (DC) Ths = 100 ˚C - 5.2 4.7 A
Drain current (pulse peak value) Ths = 25 ˚C - 33 30 A

Total power dissipation Ths = 25 ˚C - 25 W
Storage temperature - - 55 150 ˚C
Junction Temperature - - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-hs

R

th j-a

April 1993 1 Rev 1.100

Thermal resistance junction to with heatsink compound - - 5.0 K/W
heatsink
Thermal resistance junction to - 55 - K/W
ambient

Philips Semiconductors Product Specification

PowerMOS transistor BUK543-100A/B
Logic level FET

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

DSS

I

GSS

R

DS(ON)

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g

fs

C

iss

C

oss

C

rss

t

d on

t

r

t

d off

t

f

L

d

L

s

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 100 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 1.0 1.5 2.0 V
Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA
Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±15 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 5 V; BUK543-100A - 0.17 0.18 Ω
resistance ID = 5 A BUK543-100B - 0.20 0.22 Ω

Forward transconductance VDS = 25 V; ID = 5 A 6.0 8.0 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 620 825 pF

Output capacitance - 180 250 pF
Feedback capacitance - 90 120 pF

Turn-on delay time VDD = 30 V; ID = 3 A; - 10 20 ns
Turn-on rise time VGS = 5 V; RGS = 50 Ω; - 45 60 ns
Turn-off delay time R
Turn-off fall time - 40 55 ns

= 50 Ω - 90 115 ns

gen

Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH

from package to centre of die

Internal source inductance Measured from source lead 6 mm - 7.5 - nH

from package to source bond pad

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

isol

Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - 1500 V
three terminals to external
heatsink

C

isol

Capacitance from T2 to external f = 1 MHz - 12 - pF
heatsink

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I
I

V
t

Q

DR

DRM

SD

rr

rr

Continuous reverse drain - - - 8.3 A
current
Pulsed reverse drain current - - - 33 A
Diode forward voltage IF = 8.3 A ; VGS = 0 V - 1.1 1.3 V

Reverse recovery time IF = 8.3 A; -dIF/dt = 100 A/µs; - 80 - ns
Reverse recovery charge VGS = 0 V; VR = 30 V - 0.5 - µC

April 1993 2 Rev 1.100

Philips Semiconductors Product Specification

PowerMOS transistor BUK543-100A/B
Logic level FET

AVALANCHE LIMITING VALUE

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

W

DSS

Drain-source non-repetitive ID = 13 A ; VDD ≤ 50 V ; - - 70 mJ
unclamped inductive turn-off VGS = 5 V ; RGS = 50 Ω
energy

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Normalised Power Derating

with heatsink compound

Ths / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Ths / C

= f(Ths)

D 25 ˚C

Normalised Current Derating

with heatsink compound

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Ths); conditions: VGS ≥ 5 V

D 25 ˚C

ID / A

100

10

RDS(ON) = VDS/ID

1

0.1
1 100

DC

10

VDS / V

A

B

BUK543-100

tp = 10 us

100 us

1 ms
10 ms

100 ms

Fig.3. Safe operating area. Ths = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

1E+01

Zth j-hs / (K/W)

0.5

1E+00

0.2

0.1

0.05

1E-01

0.02

P

D

0

1E-02

1E-07 1E-05 1E-03 1E-01 1E+01

t / s

t

p

T

ZTHX43

p

t

D =

T

t

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-hs

p

April 1993 3 Rev 1.100