Philips BUK482-60A Datasheet

Philips Semiconductors Product Specification

PowerMOS transistor BUK482-60A

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope suitable for surface V
mount applications. I
The device is intended for use in P
automotive and general purpose T
switching applications. R

DS

D

tot
j

DS(ON)

PINNING - SOT223 PIN CONFIGURATION SYMBOL

Drain-source voltage 60 V
Drain current (DC) 2.7 A
Total power dissipation 1.7 W
Junction temperature 150 ˚C
Drain-source on-state 0.13 Ω
resistance; VGS = 10 V

PIN DESCRIPTION

4

d

1 gate
2 drain
3 source
4 drain (tab)

1

23

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

DGR

±VGSGate-source voltage - - 30 V
I

D

I

D

I

DM

P

tot

T

stg

T

j

Drain-source voltage - - 60 V
Drain-gate voltage RGS = 20 kΩ -60V

Drain current (DC) T
Drain current (DC) T
Drain current (pulse peak value) T
Total power dissipation T

= 25 ˚C - 2.7 A

amb

= 100 ˚C - 1.7 A

amb

= 25 ˚C - 11 A

amb

= 25 ˚C - 1.7 W

amb

Storage temperature - - 55 150 ˚C
Junction Temperature - - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R
R

th j-b
th j-amb

From junction to board
From junction to ambient Mounted on PCB of Fig.18 - - 75 K/W

1

Mounted on any PCB e.g. Fig.18 - 40 - K/W

1 Temperature measured 1-3 mm from tab.

April 1993 1 Rev 1.000

Philips Semiconductors Product Specification

PowerMOS transistor BUK482-60A

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

DSS

I

GSS

R

DS(ON)

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g

fs

C

iss

C

oss

C

rss

t

d on

t

r

t

d off

t

f

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 60 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; - 1 10 µA
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj = 125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 10 V; ID = 2.7 A - 0.11 0.13 Ω
resistance

Forward transconductance VDS = 25 V; ID = 2.7 A 2 3 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 300 500 pF

Output capacitance - 130 200 pF
Feedback capacitance - 60 100 pF

Turn-on delay time VDD = 30 V; ID = 3 A; - 8 14 ns
Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 25 45 ns
Turn-off delay time R
Turn-off fall time - 30 45 ns

= 50 Ω - 3045ns

gen

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

I

DRM

V
t

rr

Q

SD

rr

Continuous reverse drain - - - 2.7 A
current
Pulsed reverse drain current - - - 11 A
Diode forward voltage IF = 2.7 A; VGS = 0 V - 0.85 1.1 V

Reverse recovery time IF = 2.7 A; -dIF/dt = 100 A/µs; - 40 - ns
Reverse recovery charge VGS = -10 V; VR = 30 V - 70 - nC

AVALANCHE LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

W

DSS

Drain-source non-repetitive ID = 2.7 A; VDD ≤ 25 V; - - 30 mJ
unclamped inductive turn-off VGS = 10 V; RGS = 50 Ω;
energy T

= 25 ˚C

amb

April 1993 2 Rev 1.000

Philips Semiconductors Product Specification

PowerMOS transistor BUK482-60A

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Normalised Power Derating

Tamb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Tamb / C

= f(T

D 25 ˚C

Normalised Current Derating

amb

)

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

D 25 ˚C

= f(T

); conditions: VGS ≥ 10 V

amb

ID / A

100

10

RDS(ON) = VDS/ID

1

DC

0.1

0.01

0.1 1 10 100
VDS / V

Fig.4. Safe operating area T

ID & I

f(VDS); IDM single pulse; parameter t

DM =

ID / A

10

15

9
8
7
6
5
4
3
2
1
0

0 2 4 6 8 10

7

10

VDS / V

BUK482-60A

tp = 10 us
100 us

1 ms
10 ms
100 ms

1 s
10 s

= 25 ˚C

amb

BUK482-60A

6.5

5.5

4.5

VGS / V = 4

p

6

5

Fig.5. Typical output characteristics, Tj = 25 ˚C

ID = f(VDS); parameter V

GS

.

Zth j-amb / (K/W)

1E+02

D =

0.5

1E+01

1E+00

0.2

0.1

0.05

0.02

t

P

p

D

1E-01

0

1E-02

1E-07 1E-05 1E-03 1E-01 1E+01 1E+03

t / s

T

Fig.3. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-amb

BUKX82

t

p

D =

T

t

Fig.6. Typical on-state resistance, Tj = 25 ˚C

RDS(ON) / Ohm

0.5

0.4

0.3

0.2

0.1

0

0 2 4 6 8 10

R

= f(ID); parameter V

DS(ON)

5.5

ID / A

BUK482-60A

6

VGS / V = 15

6.554.5

7

10

.

GS

April 1993 3 Rev 1.000