Philips BUK482-200A Datasheet

Philips Semiconductors Product specification

PowerMOS transistor BUK482-200A

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope suitable for surface V
mounting featuring high avalanche I
energy capability, stable blocking P
voltage, fast switching and high R
thermal cycling performance.

DS

D

tot

DS(ON)

Intended for use in Switched Mode
PowerSupplies(SMPS)and general
purpose switching applications.

PINNING - SOT223 PIN CONFIGURATION SYMBOL

Drain-source voltage 200 V
Drain current (DC) 2.0 A
Total power dissipation 8.3 W
Drain-source on-state resistance 0.9 Ω

PIN DESCRIPTION

4

d

1 gate
2 drain
3 source
4 drain (tab)

1

23

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
±V
I

D

I

DM

I

DR

I

DRM

P
T
T

DS
DGR

GS

tot
stg
j

Drain-source voltage - 200 V
Drain-gate voltage RGS = 20 kΩ - 200 V
Gate-source voltage - 30 V
Drain current (DC) Tsp = 25 ˚C - 2.0 A

Tsp = 100 ˚C - 1.3 A
Drain current (pulse peak Tsp = 25 ˚C - 8.0 A
value)
Source-drain diode current Tsp = 25 ˚C - 2.0 A
(DC)
Source-drain diode current Tsp = 25 ˚C - 8.0 A
(pulse peak value)
Total power dissipation Tsp = 25 ˚C - 8.3 W
Storage temperature -55 150 ˚C
Junction Temperature - 150 ˚C

AVALANCHE LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

W

DSS

January 1998 1 Rev 1.000

Drain-source non-repetitive ID = 2 A ; VDD ≤ 50 V ; VGS = 10 V ;
unclamped inductive turn-off RGS = 50 Ω
energy Tj = 25˚C prior to surge - 50 mJ

Tj = 100˚C prior to surge - 8 mJ

Philips Semiconductors Product specification

PowerMOS transistor BUK482-200A

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-sp

R

th j-a

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

GSS

R

DS(ON)

V

SD

Thermal resistance junction to - - 15 K/W
solder point
Thermal resistance junction to pcb mounted; minimum footprint - 156 - K/W
ambient pcb mounted; pad area as in fig:17 - 70 - K/W

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 200 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V
Zero gate voltage drain current VDS = 200 V; VGS = 0 V; Tj = 25 ˚C - 0.1 10 µA

VDS = 200 V; VGS = 0 V; Tj = 125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 10 V; ID = 2 A - 0.53 0.9 Ω
resistance
Source-drain diode forward IF = 2 A ;VGS = 0 V - 0.87 1.0 V
voltage

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g
C

C
C

Q
Q
Q

t
t
t
t

t
Q

fs

iss
oss
rss

g(tot)
gs
gd

d on
r
d off
f

rr

rr

Forward transconductance VDS = 25 V; ID = 2 A 0.5 2.6 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 305 400 pF

Output capacitance - 60 100 pF
Feedback capacitance - 24 50 pF

Total gate charge VGS = 10 V; ID = 2 A; V
Gate to source charge - 2 - nC

= 160 V - 13 - nC

DS

Gate to drain (Miller) charge - 5 - nC
Turn-on delay time VDD = 30 V; ID = 2.75 A; - 10 15 ns

Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 30 45 ns
Turn-off delay time R
Turn-off fall time - 20 30 ns

= 50 Ω - 3040ns

GEN

Source-drain diode reverse IF = 2 A; -dIF/dt = 100 A/µs; - 88 - ns
recovery time
Source-drain diode reverse VGS = 0 V; VR = 100 V - 370 - nC
recovery charge

January 1998 2 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor BUK482-200A

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Normalised Power Derating

Tamb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Tamb / C

= f(T

D 25 ˚C

Normalised Current Derating

amb

)

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

D 25 ˚C

= f(T

); conditions: VGS ≥ 10 V

amb

ID / A

10

RDS(ON) = VDS/ID

1

0.1

0.01
1 10 100 1000

Fig.4. Safe operating area. T

ID & IDM = f(VDS); IDM single pulse; parameter t

ID / A

10

8

6

4

2

0

0246810

BUK482-200A

VDS / V

BUK482-200A

VDS / V

tp = 10 us

100 us

1 ms
10 ms

100 ms
DC

= 25 ˚C.

amb

VGS = 20 V

10

6.5

6

5.5

5

4.5
4

Fig.5. Typical output characteristics, Tj = 25 ˚C

ID = f(VDS); parameter V

GS

p

.

Zth(j-sp) K/W

100

10

1

0.1

0.01
1us 10us 100us 1ms 10ms 100ms 1s 10s

Fig.3. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-sp

BUK482-200A

tp / sec

RDS(ON) / Ohms

2

1.5
VGS =

1

t

t

p

P

D

p

D =

T

t

T

0.5

0

5 V 5.5 V

012345678

Fig.6. Typical on-state resistance, Tj = 25 ˚C

R

DS(ON)

BUK482-200A

6 V

ID / A

= f(ID); parameter V

6.5 V
10 V

20 V

.

GS

January 1998 3 Rev 1.000