Philips buk481 60a DATASHEETS
Philips Semiconductors Product specification
PowerMOS transistor BUK481-60A
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope suitable for surface V
mount applications. I
The device is intended for use in P
automotive and general purpose T
switching applications. R
DS
D
tot
j
DS(ON)
PINNING - SOT223 PIN CONFIGURATION SYMBOL
Drain-source voltage 60 V
Drain current (DC) 1.6 A
Total power dissipation 1.5 W
Junction temperature 150 ˚C
Drain-source on-state 0.35 Ω
resistance; VGS = 10 V
PIN DESCRIPTION
4
d
1 gate
2 drain
3 source
4 drain (tab)
1
23
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
DGR
±VGSGate-source voltage - - 30 V
I
D
I
D
I
DM
P
tot
T
stg
T
j
Drain-source voltage - - 60 V
Drain-gate voltage RGS = 20 kΩ -60V
Drain current (DC) T
Drain current (DC) T
Drain current (pulse peak value) T
Total power dissipation T
= 25 ˚C - 1.6 A
amb
= 100 ˚C - 1 A
amb
= 25 ˚C - 6.4 A
amb
= 25 ˚C - 1.5 W
amb
Storage temperature - -55 150 ˚C
Junction temperature - - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
R
th j-sp
th j-amb
From junction to solder point
From junction to ambient Mounted on PCB of Fig.18 - - 85 K/W
1
Mounted on any PCB . - 14 17 K/W
1 Temperature measured at solder joint on drain tab.
November 1995 1 Rev 1.100
Philips Semiconductors Product specification
PowerMOS transistor BUK481-60A
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
I
DSS
I
DSS
I
GSS
R
DS(ON)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
C
iss
C
oss
C
rss
t
d on
t
r
t
d off
t
f
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 60 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 0.1 mA 2.1 3.0 4.0 V
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; - 1 10 µA
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj = 125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 10 V; ID = 1.6 A - 0.22 0.35 Ω
resistance
Forward transconductance VDS = 25 V; ID = 1.6 A 1.0 1.5 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 140 240 pF
Output capacitance - 60 100 pF
Feedback capacitance - 28 50 pF
Turn-on delay time VDD = 30 V; ID = 3 A; - 5 10 ns
Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 25 35 ns
Turn-off delay time R
Turn-off fall time - 15 25 ns
= 50 Ω - 1020ns
gen
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
I
DRM
V
t
rr
Q
SD
rr
Continuous reverse drain - - - 1.6 A
current
Pulsed reverse drain current - - - 6.4 A
Diode forward voltage IF = 1.6 A; VGS = 0 V - 0.85 1.1 V
Reverse recovery time IF = 1.6 A; -dIF/dt = 100 A/µs; - 30 - ns
Reverse recovery charge VGS = -10 V; VR = 30 V - 60 - nC
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W
DSS
Drain-source non repetitive ID = 1.6 A ; VDD < 25 V - - 10 mJ
unclamped inductive turn-off VGS = 10 V ; RGS = 50 Ω
energy T
= 25 ˚C
amb
November 1995 2 Rev 1.100
Philips Semiconductors Product specification
PowerMOS transistor BUK481-60A
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Normalised Power Derating
Tamb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
ID%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tamb / C
= f(T
D 25 ˚C
Normalised Current Derating
amb
)
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
D 25 ˚C
= f(T
); conditions: VGS ≥ 10 V
amb
ID / A
10
1
0.1
0.01
RDS(ON) = VDS/ID
DC
0.1 1 10 100
VDS / V
Fig.4. Safe operating area T
ID & I
f(VDS); IDM single pulse; parameter t
DM =
ID / A
5
15
10
4
3
2
1
0
0 2 4 6 8 10
VDS / V
BUK481-60A
tp = 10 us
100 us
1 ms
10 ms
100 ms
1 s
10 s
= 25 ˚C
amb
BUK481-60A
6.5
5.5
VGS / V = 4.5
p
7
6
5
Fig.5. Typical output characteristics, Tj = 25 ˚C
ID = f(VDS); parameter V
GS
.
Zth j-amb / (K/W)
1E+02
D =
0.5
1E+01
1E+00
0.2
0.1
0.05
0.02
t
P
p
D
1E-01
T
1E-02
1E-07 1E-05 1E-03 1E-01 1E+01 1E+03
t / s
Fig.3. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-amb
BUKX81
t
p
D =
T
t
RDS(ON) / Ohm
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
5 5.5 6 6.5
0 2 4
135
ID / A
Fig.6. Typical on-state resistance, Tj = 25 ˚C
R
= f(ID); parameter V
DS(ON)
BUK481-60A
7
10
VGS / V = 15 V
.
GS
November 1995 3 Rev 1.100
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