Philips BUK475-60H Datasheet
Philips Semiconductors Product specification
PowerMOS transistor BUK475-60H
Isolated version of BUK455-60H
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plasticfull-packenvelope.Thedevice V
is intended for use in Automotive I
applications, Switched Mode Power P
Supplies (SMPS), motor control, T
welding, DC/DC and AC/DC R
DS
D
tot
j
DS(ON)
converters, and in general purpose resistance
switching applications.
PINNING - SOT186A PIN CONFIGURATION SYMBOL
Drain-source voltage 60 V
Drain current (DC) 22.5 A
Total power dissipation 30 W
Junction temperature 150 ˚C
Drain-source on-state 34 mΩ
PIN DESCRIPTION
case
d
1 gate
2 drain
g
3 source
case isolated
123
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
DGR
Drain-source voltage - - 60 V
Drain-gate voltage RGS = 20 kΩ -60V
±VGSGate-source voltage - - 30 V
I
D
I
D
I
DM
P
tot
T
stg
T
j
Drain current (DC) Ths = 25 ˚C - 22.5 A
Drain current (DC) Ths = 100 ˚C - 14 A
Drain current (pulse peak value) Ths = 25 ˚C - 90 A
Total power dissipation Ths = 25 ˚C - 30 W
Storage temperature - - 55 150 ˚C
Junction temperature - - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction to with heatsink compound - 4.17 K/W
heatsink
R
th j-a
Thermal resistance junction to 55 - K/W
ambient
November 1996 1 Rev 1.200
Philips Semiconductors Product specification
PowerMOS transistor BUK475-60H
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
I
DSS
I
DSS
I
GSS
R
DS(ON)
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
C
iss
C
oss
C
rss
t
d on
t
r
t
d off
t
f
L
d
L
s
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 60 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 10 V; ID = 20 A - 24 34 mΩ
resistance
Forward transconductance VDS = 25 V; ID = 20 A 8 13.5 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1000 1600 pF
Output capacitance - 470 600 pF
Feedback capacitance - 180 275 pF
Turn-on delay time VDD = 30 V; ID = 3 A; - 25 40 ns
Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 60 90 ns
Turn-off delay time R
= 50 Ω - 125 160 ns
gen
Turn-off fall time - 100 130 ns
Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
I
DRM
V
SD
t
rr
Q
rr
November 1996 2 Rev 1.200
Continuous reverse drain - - - 22.5 A
current
Pulsed reverse drain current - - - 90 A
Diode forward voltage IF = 22.5 A ; VGS = 0 V - 0.9 1.8 V
Reverse recovery time IF = 22.5 A; -dIF/dt = 100 A/µs; - 60 - ns
Reverse recovery charge VGS = 0 V; VR = 30 V - 0.25 - µC
Philips Semiconductors Product specification
PowerMOS transistor BUK475-60H
AVALANCHE LIMITING VALUE
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W
DSS
Drain-source non-repetitive ID = 43 A ; VDD ≤ 25 V ; - - 100 mJ
unclamped inductive turn-off VGS = 10 V ; RGS = 50 Ω
energy
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Normalised Power Derating
with heatsink compound
Ths / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
ID%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
= f(Ths)
D 25 ˚C
Normalised Current Derating
with heatsink compound
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
= f(Ths); conditions: VGS ≥ 5 V
D 25 ˚C
ID / A
1000
100
RDS(ON) = VDS/ID
10
DC
1
0.1
0.1 1 10 100
VDS / V
BUK445-60H
tp =
tp =
10 us
10 us
100 us
100 us
1 ms
10 ms
1 ms
100 ms
10 ms
100 ms
Fig.3. Safe operating area. Ths = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter t
Zth / (K/W)
10
D =
0.5
1
0.2
0.1
0.05
0.1
0.02
t / s
P
D
0.01
0.001
0
1E-07 1E-05 1E-03 1E-01 1E+01
BUKx45-lv
p
p
t
t
D =
T
t
T
Fig.4. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-hs
p
November 1996 3 Rev 1.200
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