Philips BUK475-200B Datasheet

Philips Semiconductors Product specification

PowerMOS transistor BUK475-200A/B
Isolated version of BUK455-200A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic full-pack envelope. The BUK475 -200A -200B
deviceisintendedforuseinSwitched V
Mode Power Supplies (SMPS), I
motor control, welding, DC/DC and P
AC/DC converters, and in general T
purpose switching applications. R

DS

D

tot
j

DS(ON)

PINNING - SOT186A PIN CONFIGURATION SYMBOL

Drain-source voltage 200 200 V
Drain current (DC) 7.6 7 A
Total power dissipation 30 30 W
Junction temperature 150 150 ˚C
Drain-source on-state 0.23 0.28 Ω
resistance

PIN DESCRIPTION

case

d

1 gate
2 drain
3 source

case isolated

123

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
±V

DS
DGR

GS

Drain-source voltage - - 200 V
Drain-gate voltage RGS = 20 kΩ - 200 V
Gate-source voltage - - 30 V

-200A -200B

I

D

I

D

I

DM

P

tot

T

stg

T

j

Drain current (DC) Ths = 25 ˚C - 7.6 7 A
Drain current (DC) Ths = 100 ˚C - 4.8 4.4 A
Drain current (pulse peak value) Ths = 25 ˚C - 30 28 A

Total power dissipation Ths = 25 ˚C - 30 W
Storage temperature - - 55 150 ˚C
Junction temperature - - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R
R

th j-hs

th j-a

Thermal resistance junction to with heatsink compound - - 4.17 K/W
heatsink
Thermal resistance junction to - 55 - K/W
ambient

June 1996 1 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistor BUK475-200A/B

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

DSS

I

GSS

R

DS(ON)

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g

fs

C

iss

C

oss

C

rss

t

d on

t

r

t

d off

t

f

L

d

L

s

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 200 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V
Zero gate voltage drain current VDS = 200 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA
Zero gate voltage drain current VDS = 200 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 10 V; BUK475-200A - 0.2 0.23 Ω
resistance ID = 7 A BUK475-200B - 0.22 0.28 Ω

Forward transconductance VDS = 25 V; ID = 7 A 6 8.4 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1400 1750 pF

Output capacitance - 190 250 pF
Feedback capacitance - 55 80 pF

Turn-on delay time VDD = 30 V; ID = 3 A; - 18 30 ns
Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 35 60 ns
Turn-off delay time R
Turn-off fall time - 35 50 ns

= 50 Ω - 85 120 ns

gen

Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH

from package to centre of die

Internal source inductance Measured from source lead 6 mm - 7.5 - nH

from package to source bond pad

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

isol

R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree

C

isol

Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I
I

V
t

Q

DR

DRM

SD

rr

rr

Continuous reverse drain - - - 7.6 A
current
Pulsed reverse drain current - - - 30 A
Diode forward voltage IF = 7.6 A ; VGS = 0 V - 1.0 1.5 V

Reverse recovery time IF = 7.6 A; -dIF/dt = 100 A/µs; - 150 - ns
Reverse recovery charge VGS = 0 V; VR = 30 V - 1.3 - µC

June 1996 2 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistor BUK475-200A/B

AVALANCHE LIMITING VALUE

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

W

DSS

Drain-source non-repetitive ID = 14 A ; VDD ≤ 100 V ; - - 100 mJ
unclamped inductive turn-off VGS = 10 V ; RGS = 50 Ω
energy

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Normalised Power Derating

with heatsink compound

Ths / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

with heatsink compound

Ths / C

= f(Ths)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Ths); conditions: VGS ≥ 10 V

D 25 ˚C

ID / A

100

A

B

10

0.1

RDS(ON) = VDS/ID

1

1 10 100 1000

DC

VDS / V

BUK445-200A,B

tp = 10 us

100 us

1 ms
10 ms

100 ms

Fig.3. Safe operating area. Ths = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

Zth / (K/W)

10

D =

0.5

1

0.2

0.1

0.05

0.1

0.02

t / s

P

D

0.01

0.001

0

1E-07 1E-05 1E-03 1E-01 1E+01

BUKx45-lv

p

p

t

t

D =

T

t

T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-hs

p

June 1996 3 Rev 1.200