Philips BUK475-100B, BUK475-100A Datasheet
Philips Semiconductors Product specification
PowerMOS transistor BUK475-100A/B
Isolated version of BUK455-100A/B
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic full-pack envelope. The BUK475 -100A -100B
deviceisintendedforuseinSwitched V
DS
Drain-source voltage 100 100 V
Mode Power Supplies (SMPS), I
D
Drain current (DC) 14 12 A
motor control, welding, DC/DC and P
tot
Total power dissipation 30 30 W
AC/DC converters, and in general T
j
Junction temperature 150 150 ˚C
purpose switching applications. R
DS(ON)
Drain-source on-state 0.08 0.1 Ω
resistance
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
Drain-source voltage - - 100 V
V
DGR
Drain-gate voltage RGS = 20 kΩ - 100 V
±V
GS
Gate-source voltage - - 30 V
-100A -100B
I
D
Drain current (DC) Ths = 25 ˚C - 14 12 A
I
D
Drain current (DC) Ths = 100 ˚C - 8.7 7.5 A
I
DM
Drain current (pulse peak value) Ths = 25 ˚C - 56 48 A
P
tot
Total power dissipation Ths = 25 ˚C - 30 W
T
stg
Storage temperature - - 55 150 ˚C
T
j
Junction temperature - - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction to with heatsink compound - - 4.17 K/W
heatsink
R
th j-a
Thermal resistance junction to - 55 - K/W
ambient
123
case
d
g
s
November 1996 1 Rev 1.200
Philips Semiconductors Product specification
PowerMOS transistor BUK475-100A/B
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 100 - - V
voltage
V
GS(TO)
Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V
I
DSS
Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA
I
DSS
Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
I
GSS
Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
R
DS(ON)
Drain-source on-state VGS = 10 V; BUK475-100A - 0.07 0.08 Ω
resistance ID = 13 A BUK475-100B - 0.08 0.1 Ω
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
Forward transconductance VDS = 25 V; ID = 13 A 7.0 13.5 - S
C
iss
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1650 2000 pF
C
oss
Output capacitance - 350 500 pF
C
rss
Feedback capacitance - 100 150 pF
t
d on
Turn-on delay time VDD = 30 V; ID = 3 A; - 15 30 ns
t
r
Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 25 40 ns
t
d off
Turn-off delay time R
gen
= 50 Ω - 100 160 ns
t
f
Turn-off fall time - 50 80 ns
L
d
Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
L
s
Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
Continuous reverse drain - - - 14 A
current
I
DRM
Pulsed reverse drain current - - - 56 A
V
SD
Diode forward voltage IF = 14 A ; VGS = 0 V - 1.3 1.7 V
t
rr
Reverse recovery time IF = 14 A; -dIF/dt = 100 A/µs; - 90 - ns
Q
rr
Reverse recovery charge VGS = 0 V; VR = 30 V - 0.70 - µC
November 1996 2 Rev 1.200
Philips Semiconductors Product specification
PowerMOS transistor BUK475-100A/B
AVALANCHE LIMITING VALUE
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W
DSS
Drain-source non-repetitive ID = 26 A ; VDD ≤ 50 V ; - - 100 mJ
unclamped inductive turn-off VGS = 10 V ; RGS = 50 Ω
energy
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
D 25 ˚C
= f(Ths)
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
D 25 ˚C
= f(Ths); conditions: VGS ≥ 10 V
Fig.3. Safe operating area. Ths = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = tp/T
0 20 40 60 80 100 120 140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
1 100
VDS / V
100
10
1
0.1
DC
BUK445-100A,B
10 1000
ID / A
tp = 10 us
100 us
1 ms
10 ms
100 ms
A
B
RDS(ON) = VDS/ID
0 20 40 60 80 100 120 140
Ths / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
1E-07 1E-05 1E-03 1E-01 1E+01
t / s
Zth / (K/W)
10
1
0.1
0.01
0.001
0
0.5
0.2
0.1
0.05
0.02
BUKx45-lv
D =
D =
t
p
t
p
T
T
P
t
D
November 1996 3 Rev 1.200
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