Philips BUK466-200A Datasheet
Philips Semiconductors Product specification
PowerMOS transistor BUK466-200A
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a plastic
envelope suitable for use in surface V
mount applications. I
The device is intended for use in P
Switched Mode Power Supplies T
(SMPS), motor control, welding, R
DS
D
tot
j
DS(ON)
DC/DC and AC/DC converters, and in resistance
general purpose switching
applications.
PINNING - SOT404 PIN CONFIGURATION SYMBOL
Drain-source voltage 200 V
Drain current (DC) 19 A
Total power dissipation 150 W
Junction temperature 175 ˚C
Drain-source on-state 0.16 Ω
PIN DESCRIPTION
mb
d
1 gate
2 drain
3 source
mb drain
2
13
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
±V
I
D
I
D
I
DM
P
T
T
DS
DGR
GS
tot
stg
j
Drain-source voltage - - 200 V
Drain-gate voltage RGS = 20 kΩ - 200 V
Gate-source voltage - - 30 V
Drain current (DC) Tmb = 25 ˚C - 19 A
Drain current (DC) Tmb = 100 ˚C - 13 A
Drain current (pulse peak value) Tmb = 25 ˚C - 76 A
Total power dissipation Tmb = 25 ˚C - 150 W
Storage temperature - - 55 175 ˚C
Junction temperature - - 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
R
th j-mb
th j-a
Thermal resistance junction to - - 1.0 K/W
mounting base
Thermal resistance junction to minimum footprint, - 50 - K/W
ambient FR4 board (see Fig. 18).
February 1996 1 Rev 1.000
Philips Semiconductors Product specification
PowerMOS transistor BUK466-200A
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
I
DSS
I
DSS
I
GSS
R
DS(ON)
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
C
iss
C
oss
C
rss
t
d on
t
r
t
d off
t
f
L
d
L
s
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 200 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V
Zero gate voltage drain current VDS = 200 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA
Zero gate voltage drain current VDS = 200 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 10 V; ID = 10 A - 0.15 0.16 Ω
resistance
Forward transconductance VDS = 25 V; ID = 10 A 8.5 16 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1500 2000 pF
Output capacitance - 300 400 pF
Feedback capacitance - 60 100 pF
Turn-on delay time VDD = 30 V; ID = 3 A; - 20 30 ns
Turn-on rise time VGS = 10 V; - 40 60 ns
Turn-off delay time R
Turn-off fall time RGS = 50 Ω - 5070ns
= 50 Ω; - 145 185 ns
gen
Internal drain inductance Measured from upper edge of drain - 2.5 - nH
tab to centre of die
Internal source inductance Measured from source lead - 7.5 - nH
soldering point to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
I
DRM
V
t
rr
Q
SD
rr
Continuous reverse drain - - - 19 A
current
Pulsed reverse drain current - - - 76 A
Diode forward voltage IF = 19 A ; VGS = 0 V - 1.0 1.7 V
Reverse recovery time IF = 19 A; -dIF/dt = 100 A/µs; - 180 - ns
Reverse recovery charge VGS = 0 V; VR = 30 V - 2.5 - µC
AVALANCHE LIMITING VALUE
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W
DSS
Drain-source non-repetitive ID = 19 A ; VDD ≤ 30 V ; - - 150 mJ
unclamped inductive turn-off VGS = 10 V ; RGS = 50 Ω
energy
February 1996 2 Rev 1.000
Philips Semiconductors Product specification
PowerMOS transistor BUK466-200A
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Normalised Power Derating
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
ID%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
= f(Tmb)
D 25 ˚C
Normalised Current Derating
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
= f(Tmb); conditions: VGS ≥ 10 V
D 25 ˚C
10
1
0.1
0.01
0.001
Zth j-mb / (K/W)
D =
0.5
0.2
0.1
0.05
0.02
0
1E-05 1E-03 1E-01 1E+01
t / s
P
D
BUKx56-lv
p
p
t
t
D =
T
t
T
Fig.4. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-mb
ID / A
40
30
20
10
0
0 2 4 6 8 10 12 14 16 18 20
20
10
VDS / V
BUK456-200A
7
VGS / V =
6
5
4
Fig.5. Typical output characteristics, Tj = 25 ˚C
ID = f(VDS); parameter V
GS
.
A
tp = 10 us
100 us
1 ms
10 ms
100 ms
BUK456-200A,B
RDS(ON) / Ohm
1.0
4.5
4
0.8
0.6
0.4
0.2
0
0 10 20 30 40
5
ID / A
Fig.6. Typical on-state resistance, Tj = 25 ˚C
R
p
= f(ID); parameter V
DS(ON)
BUK456-200A
VGS / V =
5.5
6
7
10
.
GS
ID / A
100
10
1
0.1
RDS(ON) = VDS/ID
DC
1 10 100 1000
VDS / V
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter t
February 1996 3 Rev 1.000
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