Philips BUK456-100A-B Technical data

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Philips Semiconductors Product specification

PowerMOS transistor BUK456-100A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic envelope. BUK456 -100A -100B
The device is intended for use in V
Switched Mode Power Supplies I
(SMPS), motor control, welding, P
DC/DC and AC/DC converters, and T
in general purpose switching R
applications. resistance

DS

D

tot
j

DS(ON)

PINNING - TO220AB PIN CONFIGURATION SYMBOL

Drain-source voltage 100 100 V
Drain current (DC) 34 32 A
Total power dissipation 150 150 W
Junction temperature 175 175 ˚C
Drain-source on-state 0.057 0.065 Ω

PIN DESCRIPTION

tab

d

1 gate
2 drain
3 source

tab drain

123

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
±V

DS
DGR

GS

Drain-source voltage - - 100 V
Drain-gate voltage RGS = 20 kΩ - 100 V
Gate-source voltage - - 30 V

-100A -100B

I

D

I

D

I

DM

P

tot

T

stg

T

j

Drain current (DC) Tmb = 25 ˚C - 34 32 A
Drain current (DC) Tmb = 100 ˚C - 24 22 A
Drain current (pulse peak value) Tmb = 25 ˚C - 136 128 A

Total power dissipation Tmb = 25 ˚C - 150 W
Storage temperature - - 55 175 ˚C
Junction temperature - - 175 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R
R

th j-mb

th j-a

Thermal resistance junction to - - 1.0 K/W
mounting base
Thermal resistance junction to - 60 - K/W
ambient

April 1998 1 Rev 1.100

Philips Semiconductors Product specification

PowerMOS transistor BUK456-100A/B

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

DSS

I

GSS

R

DS(ON)

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g

fs

C

iss

C

oss

C

rss

t

d on

t

r

t

d off

t

f

L

d

L

d

L

s

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 100 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V
Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA
Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 10 V; BUK456-100A - 0.052 0.057 Ω
resistance ID = 15 A BUK456-100B - 0.06 0.065 Ω

Forward transconductance VDS = 25 V; ID = 15 A 12 16 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1500 2000 pF

Output capacitance - 450 600 pF
Feedback capacitance - 130 200 pF

Turn-on delay time VDD = 30 V; ID = 3 A; - 20 30 ns
Turn-on rise time VGS = 10 V; - 40 60 ns
Turn-off delay time R
Turn-off fall time RGS = 50 Ω - 6585ns

= 50 Ω; - 150 200 ns

gen

Internal drain inductance Measured from contact screw on - 3.5 - nH

tab to centre of die

Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH

from package to centre of die

Internal source inductance Measured from source lead 6 mm - 7.5 - nH

from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

I

DRM

V

SD

t

rr

Q

rr

April 1998 2 Rev 1.100

Continuous reverse drain - - - 34 A
current
Pulsed reverse drain current - - - 136 A
Diode forward voltage IF = 34 A ; VGS = 0 V - 1.8 2.5 V

Reverse recovery time IF = 34 A; -dIF/dt = 100 A/µs; - 100 - ns
Reverse recovery charge VGS = 0 V; VR = 30 V - 1.0 - µC

Philips Semiconductors Product specification

PowerMOS transistor BUK456-100A/B

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Tmb / C

= f(Tmb)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 10 V

D 25 ˚C

10

1

0.1

0.01

0.001

Zth j-mb / (K/W)

D =

0.5

0.2

0.1

0.05

0.02

0

1E-05 1E-03 1E-01 1E+01

t / s

P

D

BUKx56-lv

p

p

t

t

D =

T

t

T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

ID / A

70
60
50
40
30
20
10

0

VGS / V =

0 2 4 6 8 10

20

15

VDS / V

10

BUK456-100A

8

7

6

5

4

Fig.5. Typical output characteristics, Tj = 25 ˚C

ID = f(VDS); parameter V

GS

.

1000

100

10

ID / A

RDS(ON) = VDS/ID

DC

1

1

10

VDS / V

BUK456-100A,B

A
B

tp = 10 us

100 us

1 ms

10 ms
100 ms

100

1000

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

RDS(ON) / Ohm

0.2

0.1

4.5 5 5.5

0

0 20 40 60 80

6

ID / A

Fig.6. Typical on-state resistance, Tj = 25 ˚C

R

p

= f(ID); parameter V

DS(ON)

6.5

BUK456-100A

VGS / V =

7

7.5

GS

8

10

20

.

April 1998 3 Rev 1.100