Philips BUK454-800A-B Technical data

BUK454-800A

Philips Semiconductors	Product Specification
PowerMOS transistor	BUK454-800A/B

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode

SYMBOL

PARAMETER

MAX.

MAX.

UNIT

field-effect power transistor in a

BUK454

-800A

-800B

plastic envelope.

The device is intended for use in

VDS

Drain-source voltage

800

800

V

Switched Mode Power Supplies

ID

Drain current (DC)

2.4

2.0

A

(SMPS), motor control, welding,

Ptot

Total power dissipation

85

85

W

DC/DC and AC/DC converters, and

RDS(ON)

Drain-source on-state

6

8

Ω

in general purpose switching

resistance

applications.

PINNING - TO220AB						PIN CONFIGURATION		SYMBOL
	PIN		DESCRIPTION			tab		d

1gate

2drain

3	source	g
tab	drain	s
	1 2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL	PARAMETER	CONDITIONS		MIN.	MAX.			UNIT
VDS	Drain-source voltage	-		-		800		V
VDGR	Drain-gate voltage	RGS = 20 kΩ		-		800		V
±VGS	Gate-source voltage	-		-		30		V
					-800A		-800B
ID	Drain current (DC)	Tmb =	25 ˚C	-	2.4		2.0	A
ID	Drain current (DC)	Tmb = 100 ˚C		-	1.5		1.25	A
IDM	Drain current (pulse peak value)	Tmb =	25 ˚C	-	9.5		8	A
Ptot	Total power dissipation	Tmb =	25 ˚C	-		85		W
Tstg	Storage temperature	-		- 55		150		˚C
Tj	Junction Temperature	-		-		150		˚C

THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
Rth j-mb	Thermal resistance junction to		-	-	1.47	K/W
	mounting base
Rth j-a	Thermal resistance junction to		-	60	-	K/W
	ambient

April 1993

1

Rev 1.100

Philips Semiconductors	Product Specification
PowerMOS transistor	BUK454-800A/B

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS			MIN.	TYP.	MAX.	UNIT
V(BR)DSS	Drain-source breakdown	VGS = 0 V; ID = 0.25 mA			800	-	-	V
	voltage
VGS(TO)	Gate threshold voltage	VDS = VGS; ID = 1 mA			2.1	3.0	4.0	V
IDSS	Zero gate voltage drain current	VDS = 800	V; VGS = 0	V; Tj = 25 ˚C	-	2	20	μA
IDSS	Zero gate voltage drain current	VDS = 800	V; VGS = 0	V; Tj =125 ˚C	-	0.1	1.0	mA
IGSS	Gate source leakage current	VGS = ±30 V; VDS = 0		V	-	10	100	nA
RDS(ON)	Drain-source on-state	VGS = 10 V;		BUK454-800A	-	5	6	Ω
	resistance	ID = 1.0 A		BUK454-800B	-	6	8	Ω

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
gfs	Forward transconductance	VDS = 25 V; ID = 1.0 A	1.0	2.3	-	S
Ciss	Input capacitance	VGS = 0 V; VDS = 25 V; f = 1 MHz	-	450	750	pF
Coss	Output capacitance		-	42	70	pF
Crss	Feedback capacitance		-	15	30	pF
td on	Turn-on delay time	VDD = 30 V; ID = 1.9 A;	-	15	20	ns
tr	Turn-on rise time	VGS = 10 V; RGS = 50 Ω;	-	25	40	ns
td off	Turn-off delay time	Rgen = 50 Ω	-	50	65	ns
tf	Turn-off fall time		-	30	40	ns
Ld	Internal drain inductance	Measured from contact screw on	-	3.5	-	nH
		tab to centre of die
Ld	Internal drain inductance	Measured from drain lead 6 mm	-	4.5	-	nH
		from package to centre of die
Ls	Internal source inductance	Measured from source lead 6 mm	-	7.5	-	nH
		from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT
IDR	Continuous reverse drain	-		-	-	2.6	A
	current
IDRM	Pulsed reverse drain current	-		-	-	10	A
VSD	Diode forward voltage	IF = 2.6	A ; VGS = 0 V	-	1.0	1.3	V
trr	Reverse recovery time	IF = 2.6	A; -dIF/dt = 100 A/μs;	-	230	-	ns
Qrr	Reverse recovery charge	VGS = 0 V; VR = 100 V		-	1.9	-	μC

April 1993

2

Rev 1.100

Philips Semiconductors	Product Specification
PowerMOS transistor	BUK454-800A/B

120	PD%				Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0	0	20	40	60	80	100	120	140
					Tmb /	C
	Fig.1.		Normalised power dissipation.
	PD% = 100×PD/PD 25 ˚C = f(Tmb)

120	ID%					Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0	0	20		40	60	80	100	120	140
						Tmb /	C
Fig.2. Normalised continuous drain current.
ID% = 100×ID/ID 25 ˚C = f(Tmb); conditions: VGS ³										10 V
100	ID / A							BUK454-800A,B
10						A
				VDS/ID
			=			B
	RDS(ON)
							tp = 10 us
1							100 us
					DC		1 ms

					10 ms
0.1						100 ms
10			100	1000
				VDS / V
Fig.3.			Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter tp

10	Zth / (K/W)					BUKx54-hv
	D =
1	0.5
	0.2
	0.1
0.1	0.05					p
			P	p		t
	0.02			t	D = T
			D
	0				T	t
0.01
1E-07		1E-05	1E-03		1E-01	1E+01
			t / s

Fig.4. Transient thermal impedance.
	Zth j-mb = f(t); parameter D = tp/T
ID / A						BUK454-800A
4							10
							6
3							5
							4.8
2
							4.6
1							4.4
							4.2
							4
0
0	4	8	12	16	20	24	28
				VDS / V

Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
RDS(ON) / Ohm			BUK454-800A
20
4	4.2	4.4
15		4.6	VGS / V =
			4.8
10			5
				6
				10
5
0
0	1	2	3	4
		ID / A

Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS

April 1993

3

Rev 1.100