查询BUK454-200A供应商
Philips Semiconductors Product Specification
PowerMOS transistor BUK454-200A/B
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a plastic
envelope suitable for use in surface V
mount applications. I
The device is intended for use in P
Switched Mode Power Supplies T
(SMPS), motor control, welding, R
DS
D
tot
j
DS(ON)
DC/DC and AC/DC converters, and in resistance
general purpose switching
applications.
PINNING - TO220AB PIN CONFIGURATION SYMBOL
Drain-source voltage 200 V
Drain current (DC) 9.2 A
Total power dissipation 90 W
Junction temperature 175 ˚C
Drain-source on-state 0.4 Ω
PIN DESCRIPTION
tab
d
1 gate
2 drain
3 source
tab drain
123
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
±V
I
D
I
D
I
DM
P
T
T
DS
DGR
GS
tot
stg
j
Drain-source voltage - - 200 V
Drain-gate voltage RGS = 20 kΩ - 200 V
Gate-source voltage - - 30 V
-200A -200B
Drain current (DC) Tmb = 25 ˚C - 9.2 8.2 A
Drain current (DC) Tmb = 100 ˚C - 6.5 5.8 A
Drain current (pulse peak value) Tmb = 25 ˚C - 36 33 A
Total power dissipation Tmb = 25 ˚C - 90 W
Storage temperature - - 55 175 ˚C
Junction Temperature - - 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
February 1996 1 Rev 1.000
Thermal resistance junction to - - 1.67 K/W
mounting base
Thermal resistance junction to - 60 - K/W
ambient
Philips Semiconductors Product Specification
PowerMOS transistor BUK454-200A/B
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
I
DSS
I
DSS
I
GSS
R
DS(ON)
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
C
iss
C
oss
C
rss
t
d on
t
r
t
d off
t
f
L
d
L
d
L
s
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 200 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V
Zero gate voltage drain current VDS = 200 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA
Zero gate voltage drain current VDS = 200 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 10 V; BUK454-200A - 0.35 0.4 Ω
resistance ID = 3.5 A BUK454-200B - 0.4 0.5 Ω
Forward transconductance VDS = 25 V; ID = 3.5 A 3.5 5.0 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 700 850 pF
Output capacitance - 100 160 pF
Feedback capacitance - 50 80 pF
Turn-on delay time VDD = 30 V; ID = 2.9 A; - 12 20 ns
Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 45 70 ns
Turn-off delay time R
Turn-off fall time - 40 60 ns
= 50 Ω - 80 120 ns
gen
Internal drain inductance Measured from contact screw on - 3.5 - nH
tab to centre of die
Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
I
DRM
V
t
rr
Q
SD
rr
Continuous reverse drain - - - 9.2 A
current
Pulsed reverse drain current - - - 36 A
Diode forward voltage IF = 9.2 A ; VGS = 0 V - 1.1 1.3 V
Reverse recovery time IF = 9.2 A; -dIF/dt = 100 A/µs; - 180 - ns
Reverse recovery charge VGS = 0 V; VR = 100 V - 1.2 - µC
AVALANCHE LIMITING VALUE
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W
DSS
February 1996 2 Rev 1.000
Drain-source non-repetitive ID = 9 A ; VDD ≤ 100 V ; - - 50 mJ
unclamped inductive turn-off VGS = 10 V ; RGS = 50 Ω
energy
Philips Semiconductors Product Specification
PowerMOS transistor BUK454-200A/B
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Normalised Power Derating
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
ID%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
= f(Tmb)
D 25 ˚C
Normalised Current Derating
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
= f(Tmb); conditions: VGS ≥ 10 V
D 25 ˚C
Zth / (K/W)
10
D =
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0
1E-07 1E-05 1E-03 1E-01 1E+01
t / s
P
D
t
p
T
BUKx54-lv
t
p
D =
T
t
Fig.4. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-mb
ID / A
20
15
10
VGS / V =
5
0
0 2 4 6 8 10 12 14 16 18 20
20
VDS / V
BUK444-200A
810
7
6
5
4
Fig.5. Typical output characteristics, Tj = 25 ˚C
ID = f(VDS); parameter V
GS
.
ID / A
100
A
B
10
1
0.1
1 10 100 1000
RDS(ON) = VDS/ID
DC
VDS / V
BUK454-200A,B
tp = 10 us
100 us
1 ms
10 ms
100 ms
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter t
RDS(ON) / Ohm
1.5
5.5
5
4.5
1.0
0.5
0
0 2 4 6 8 10 12 14 16 18 20
6 6.5
ID / A
Fig.6. Typical on-state resistance, Tj = 25 ˚C
R
p
= f(ID); parameter V
DS(ON)
BUK454-200A
VGS / V =
7
GS
7.5
8
10
20
.
February 1996 3 Rev 1.000
Philips Semiconductors Product Specification
PowerMOS transistor BUK454-200A/B
ID / A
20
15
10
5
0
0 2 4 6 8 10
Tj / C =
VGS / V
BUK454-200A
25
150
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter T
6
5
4
3
2
1
gfs / S
BUK454-200A
VGS(TO) / V
4
3
2
1
0
-60 -20 20 60 100 140 180
max.
typ.
min.
Tj / C
Fig.10. Gate threshold voltage.
V
j
= f(Tj); conditions: ID = 1 mA; VDS = V
GS(TO)
1E-01
1E-02
1E-03
1E-04
1E-05
ID / A
SUB-THRESHOLD CONDUCTION
2 %
typ
GS
98 %
0
0 2 4 6 8 10 12 14 16 18 20
Fig.8. Typical transconductance, Tj = 25 ˚C
ID / A
.
gfs = f(ID); conditions: VDS = 25 V
a
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-60 -20 20 60 100 140 180
Normalised RDS(ON) = f(Tj)
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 ˚C
= f(Tj); ID = 3.5 A; VGS = 10 V
1E-06
0 1 2 3 4
VGS / V
Fig.11. Sub-threshold drain current.
ID = f(V
10000
1000
100
10
Fig.12. Typical capacitances, C
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
; conditions: Tj = 25 ˚C; VDS = V
GS)
C / pF
0 20 40
VDS / V
BUK4y4-200
, C
iss
oss
Ciss
Coss
Crss
, C
GS
rss
.
February 1996 4 Rev 1.000
Philips Semiconductors Product Specification
PowerMOS transistor BUK454-200A/B
VGS / V
12
10
8
6
4
2
0
0 4 8 12 16 20 24 28
QG / nC
BUK454-200
VDS / V =40
160
Fig.13. Typical turn-on gate-charge characteristics.
V
= f(QG); conditions: ID = 9 A; parameter V
GS
IF / A
20
15
10
Tj / C = 150
5
25
0
0 1 2
VSDS / V
BUK454-200A
DS
Fig.14. Typical reverse diode current.
IF = f(V
); conditions: V
SDS
= 0 V; parameter T
GS
j
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 160 180
Tmb / C
Fig.15. Normalised avalanche energy rating.
W
% = f(Tmb); conditions: ID = 9 A
DSS
+
L
VDS
VGS
DSS
T.U.T.
/(BV
0
RGS
Fig.16. Avalanche energy test circuit.
W
= 0.5 ⋅LI
DSS
2
D
⋅ BV
DSS−VDD
-
R 01
shunt
)
VDD
-ID/100
February 1996 5 Rev 1.000
Philips Semiconductors Product Specification
PowerMOS transistor BUK454-200A/B
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10,3
max
1,3
3,7
4,5
max
3,0 max
not tinned
1,3
max
(2x)
123
2,54 2,54
2,8
3,0
13,5
min
0,9 max (3x)
5,9
min
15,8
max
0,6
2,4
Fig.17. TO220AB; pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for TO220 envelopes.
3. Epoxy meets UL94 V0 at 1/8".
February 1996 6 Rev 1.000
Philips Semiconductors Product Specification
PowerMOS transistor BUK454-200A/B
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1996 7 Rev 1.000
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