Philips BUK451-100A-B Technical data
Philips Semiconductors Preliminary Specification
PowerMOS transistor BUK451-100A/B
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic envelope. BUK451 -100A -100B
The device is intended for use in V
DS
Drain-source voltage 100 100 V
Switched Mode Power Supplies I
D
Drain current (DC) 3.0 3.0 A
(SMPS), motor control, welding, P
tot
Total power dissipation 40 40 W
DC/DC and AC/DC converters, and T
j
Junction temperature 175 175 ˚C
in general purpose switching R
DS(ON)
Drain-source on-state 0.85 1.1 Ω
applications. resistance
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
Drain-source voltage - - 100 V
V
DGR
Drain-gate voltage R
GS
= 20 kΩ - 100 V
±V
GS
Gate-source voltage - - 30 V
-100A -100B
I
D
Drain current (DC) T
mb
= 25 ˚C - 3.0 3.0 A
I
D
Drain current (DC) T
mb
= 100 ˚C - 3.0 3.0 A
I
DM
Drain current (pulse peak value) T
mb
= 25 ˚C - 12 12 A
P
tot
Total power dissipation T
mb
= 25 ˚C - 40 W
T
stg
Storage temperature - - 55 175 ˚C
T
j
Junction Temperature - - 175 ˚C
123
tab
d
g
s
查询BUK451-100A供应商查询BUK451-100A供应商
Philips Semiconductors Preliminary Specification
PowerMOS transistor BUK451-100A/B
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction to - - 3.75 K/W
mounting base
R
th j-a
Thermal resistance junction to - 60 - K/W
ambient
STATIC CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown V
GS
= 0 V; I
D
= 0.25 mA 100 - - V
voltage
V
GS(TO)
Gate threshold voltage V
DS
= V
GS
; I
D
= 1 mA 2.1 3.0 4.0 V
I
DSS
Zero gate voltage drain current V
DS
= 100 V; V
GS
= 0 V; T
j
= 25 ˚C - 1 10 µA
I
DSS
Zero gate voltage drain current V
DS
= 100 V; V
GS
= 0 V; T
j
=125 ˚C - 0.1 1.0 mA
I
GSS
Gate source leakage current V
GS
= ±30 V; V
DS
= 0 V - 10 100 nA
R
DS(ON)
Drain-source on-state V
GS
= 10 V; BUK451-100A - 0.75 0.85 Ω
resistance I
D
= 2.5 A BUK451-100B - 0.90 1.10 Ω
DYNAMIC CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
Forward transconductance V
DS
= 25 V; I
D
= 2.5 A 1.3 1.7 - S
C
iss
Input capacitance V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz - 160 240 pF
C
oss
Output capacitance - 45 60 pF
C
rss
Feedback capacitance - 16 25 pF
t
d on
Turn-on delay time V
DD
= 30 V; I
D
= 3 A; - 4 6 ns
t
r
Turn-on rise time V
GS
= 10 V; R
GS
= 50 Ω; - 15 25 ns
t
d off
Turn-off delay time R
gen
= 50 Ω - 1020ns
t
f
Turn-off fall time - 10 20 ns
L
d
Internal drain inductance Measured from contact screw on - 3.5 - nH
tab to centre of die
L
d
Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
L
s
Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
Continuous reverse drain - - - 3.0 A
current
I
DRM
Pulsed reverse drain current - - - 12 A
V
SD
Diode forward voltage I
F
= 3.0 A ; V
GS
= 0 V - 1.1 1.4 V
t
rr
Reverse recovery time I
F
= 3.0 A; -dI
F
/dt = 100 A/µs; - 100 - ns
Q
rr
Reverse recovery charge V
GS
= 0 V; V
R
= 30 V - 0.25 - µC
January 1980
Philips Semiconductors Preliminary Specification
PowerMOS transistor BUK451-100A/B
Fig.1. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25 ˚C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
⋅
I
D
/I
D 25 ˚C
= f(T
mb
); conditions: V
GS
≥
5 V
Fig.3. Safe operating area. T
mb
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 ˚C
.
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 ˚C
.
R
DS(ON)
= f(I
D
); parameter V
GS
0 20 40 60 80 100 120 140 160 180
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-05 1E-03 1E-01 1E+01
t / s
Zth j-mb / (K/W)
10
1
0.1
0.01
0
0.5
0.2
0.1
0.05
0.02
D=
D =
t
p
t
p
T
T
P
t
D
0 20 40 60 80 100 120 140 160 180
Ths / C
ID / % Normalised Current Derating
120
100
80
60
40
20
0
110
90
70
50
30
10
A
B
0 4 8 12 16 20
VDS / V
ID / A
BUK4y1-100
10
8
6
4
2
0
5
6
7
8
9
10
15
VGS / V =
1 100
VDS / V
ID / A
100
10
1
0.1
RDS(ON) = VDS/ID
DC
BUK451-100
10
B
A
100 us
1 ms
10 ms
100 ms
10 us
tp =
0 2 4 6 8 10
VDS / V
ID / A
BUK4y1-100
5
4
3
2
1
0
8
9
10
15
765
VGS / V =
January 1980
Loading...