Philips BUK451-100B, BUK451-100A Datasheet

Philips Semiconductors Preliminary Specification

PowerMOS transistor BUK451-100A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic envelope. BUK451 -100A -100B
The device is intended for use in V
Switched Mode Power Supplies I
(SMPS), motor control, welding, P
DC/DC and AC/DC converters, and T
in general purpose switching R
applications. resistance

DS

D

tot
j

DS(ON)

PINNING - TO220AB PIN CONFIGURATION SYMBOL

Drain-source voltage 100 100 V
Drain current (DC) 3.0 3.0 A
Total power dissipation 40 40 W
Junction temperature 175 175 ˚C
Drain-source on-state 0.85 1.1 Ω

PIN DESCRIPTION

tab

d

1 gate
2 drain
3 source

tab drain

123

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
±V

I

D

I

D

I

DM

P
T
T

DS
DGR

GS

tot
stg
j

Drain-source voltage - - 100 V
Drain-gate voltage RGS = 20 kΩ - 100 V
Gate-source voltage - - 30 V

-100A -100B

Drain current (DC) Tmb = 25 ˚C - 3.0 3.0 A
Drain current (DC) Tmb = 100 ˚C - 3.0 3.0 A
Drain current (pulse peak value) Tmb = 25 ˚C - 12 12 A

Total power dissipation Tmb = 25 ˚C - 40 W
Storage temperature - - 55 175 ˚C
Junction Temperature - - 175 ˚C

Philips Semiconductors Preliminary Specification

PowerMOS transistor BUK451-100A/B

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

R

th j-a

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

DSS

I

GSS

R

DS(ON)

Thermal resistance junction to - - 3.75 K/W
mounting base
Thermal resistance junction to - 60 - K/W
ambient

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 100 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V
Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA
Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 10 V; BUK451-100A - 0.75 0.85 Ω
resistance ID = 2.5 A BUK451-100B - 0.90 1.10 Ω

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g

fs

C

iss

C

oss

C

rss

t

d on

t

r

t

d off

t

f

L

d

L

d

Forward transconductance VDS = 25 V; ID = 2.5 A 1.3 1.7 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 160 240 pF

Output capacitance - 45 60 pF
Feedback capacitance - 16 25 pF

Turn-on delay time VDD = 30 V; ID = 3 A; - 4 6 ns
Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 15 25 ns
Turn-off delay time R
Turn-off fall time - 10 20 ns

= 50 Ω - 1020ns

gen

Internal drain inductance Measured from contact screw on - 3.5 - nH

tab to centre of die

Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH

from package to centre of die

L

s

Internal source inductance Measured from source lead 6 mm - 7.5 - nH

from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

I

DRM

V
t

rr

Q

SD

rr

Continuous reverse drain - - - 3.0 A
current
Pulsed reverse drain current - - - 12 A
Diode forward voltage IF = 3.0 A ; VGS = 0 V - 1.1 1.4 V

Reverse recovery time IF = 3.0 A; -dIF/dt = 100 A/µs; - 100 - ns
Reverse recovery charge VGS = 0 V; VR = 30 V - 0.25 - µC

January 1980

Philips Semiconductors Preliminary Specification

PowerMOS transistor BUK451-100A/B

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID / % Normalised Current Derating

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Ths / C

D 25 ˚C

= f(Tmb)

A

B

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 5 V

D 25 ˚C

Zth j-mb / (K/W)

10

D=

0.5

1

0.2

0.1

0.05

0.02

0.1

0.01

p

t

P

0

1E-05 1E-03 1E-01 1E+01

D

t / s

t

p

D =

T

t

T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

10

ID / A

8

VGS / V =

BUK4y1-100

15

10
9

6

8

4

2

0

0 4 8 12 16 20

7

6
5

VDS / V

Fig.5. Typical output characteristics, Tj = 25 ˚C

ID = f(VDS); parameter V

GS

.

ID / A

100

A

B

10

RDS(ON) = VDS/ID

1

0.1
1 100

DC

10

VDS / V

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

January 1980

BUK451-100

tp =

10 us

100 us

1 ms

10 ms
100 ms

ID / A

5

4

3

2

1

0

0 2 4 6 8 10

765

VDS / V

VGS / V =

Fig.6. Typical on-state resistance, Tj = 25 ˚C

R

p

= f(ID); parameter V

DS(ON)

8

BUK4y1-100

9

10

GS

15

.