Philips BUK446-800B, BUK446-800A Datasheet

Philips Semiconductors Product Specification
PowerMOS transistor BUK446-800A/B
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK446 -800A -800B The device is intended for use in V Switched Mode Power Supplies I (SMPS), motor control, welding, P DC/DC and AC/DC converters, and R
DS
D
tot
DS(ON)
in general purpose switching resistance applications.
PINNING - SOT186 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
case
d
1 gate 2 drain 3 source
case isolated
123
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V V ±V
DS DGR
GS
Drain-source voltage - - 800 V Drain-gate voltage RGS = 20 k - 800 V Gate-source voltage - - 30 V
-800A -800B
I
D
I
D
I
DM
P
tot
T
stg
T
j
Drain current (DC) Ths = 25 ˚C - 2.0 1.7 A Drain current (DC) Ths = 100 ˚C - 1.3 1.1 A Drain current (pulse peak value) Ths = 25 ˚C - 8 6.8 A
Total power dissipation Ths = 25 ˚C - 30 W Storage temperature - - 55 150 ˚C Junction Temperature - - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R R
th j-hs
th j-a
Thermal resistance junction to with heatsink compound - - 4.16 K/W heatsink Thermal resistance junction to - 55 - K/W ambient
May 1995 1 Rev 1.200
Philips Semiconductors Product Specification
PowerMOS transistor BUK446-800A/B
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
I
DSS
I
DSS
I
GSS
R
DS(ON)
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
C
iss
C
oss
C
rss
t
d on
t
r
t
d off
t
f
L
d
L
s
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 800 - - V voltage Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V Zero gate voltage drain current VDS = 800 V; VGS = 0 V; Tj = 25 ˚C - 2 20 µA Zero gate voltage drain current VDS = 800 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA Drain-source on-state VGS = 10 V; BUK446-800A - 2.7 3.0 resistance ID = 1.5 A BUK446-800B - 3.5 4.0
Forward transconductance VDS = 25 V; ID = 1.5 A 3.0 4.3 - S Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1000 1250 pF
Output capacitance - 80 120 pF Feedback capacitance - 30 50 pF
Turn-on delay time VDD = 30 V; ID = 2.3 A; - 10 25 ns Turn-on rise time VGS = 10 V; RGS = 50 ; - 50 70 ns Turn-off delay time R Turn-off fall time - 40 60 ns
= 50 - 130 150 ns
gen
Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
Repetitive peak voltage from all R.H. 65% ; clean and dustfree - 1500 V three terminals to external heatsink
C
isol
Capacitance from T2 to external f = 1 MHz - 12 - pF heatsink
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I I
V t
Q
DR
DRM
SD
rr
rr
Continuous reverse drain - - - 2.0 A current Pulsed reverse drain current - - - 8 A Diode forward voltage IF = 2.0 A ; VGS = 0 V - 1.0 1.3 V
Reverse recovery time IF = 2.0 A; -dIF/dt = 100 A/µs; - 1800 - ns Reverse recovery charge VGS = 0 V; VR = 100 V - 12 - µC
May 1995 2 Rev 1.200
Philips Semiconductors Product Specification
PowerMOS transistor BUK446-800A/B
PD%
120 110 100
90 80 70 60 50 40 30 20 10
0
0 20 40 60 80 100 120 140
Normalised Power Derating
with heatsink compound
Ths / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
ID%
120 110 100
90 80 70 60 50 40 30 20 10
0
0 20 40 60 80 100 120 140
with heatsink compound
Ths / C
= f(Ths)
D 25 ˚C
Normalised Current Derating
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
= f(Ths); conditions: VGS ≥ 10 V
D 25 ˚C
t
p
T
BUKx46-hv
t
p
D =
T
t
Zth / (K/W)
10
D =
0.5
1
0.2
0.1
0.05
0.1
0.02
t / s
P
D
0.01
0.001
0
1E-07 1E-05 1E-03 1E-01 1E+01
Fig.4. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-hs
ID / A
8
VGS / V =
6
4
2
0
0 4 8 12 16 20 24 28
VDS / V
BUK4y6-800A
10
6
5
4.8
4.6
4.4
4.2 4
Fig.5. Typical output characteristics, Tj = 25 ˚C
ID = f(VDS); parameter V
GS
.
ID / A
100
10
RDS(ON) = VDS/ID
1
0.1
0.01 10 1000
A
B
DC
100
VDS / V
Fig.3. Safe operating area. Ths = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter t
BUK446-800A,B
tp = 10 us
100 us 1 ms
10 ms 100 ms
RDS(ON) / Ohm
10
4.2
4.4
4.6 VGS / V =
ID / A
8
6
4
2
0
4
0 2 4 6
Fig.6. Typical on-state resistance, Tj = 25 ˚C
R
p
= f(ID); parameter V
DS(ON)
BUK4y6-800A
4.8
5
10
.
GS
May 1995 3 Rev 1.200
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