Philips BUK446-1000B Datasheet

Philips Semiconductors Product Specification

PowerMOS transistor BUK446-1000B

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic full-pack envelope. V
The device is intended for use in I
Switched Mode Power Supplies P
(SMPS), motor control, welding, R
DC/DC and AC/DC converters, and resistance

DS

D

tot

DS(ON)

in general purpose switching
applications.

PINNING - SOT186 PIN CONFIGURATION SYMBOL

Drain-source voltage 1000 V
Drain current (DC) 1.5 A
Total power dissipation 30 W
Drain-source on-state 5 Ω

PIN DESCRIPTION

case

d

1 gate
2 drain
3 source

case isolated

123

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
±V
I

D

I

D

I

DM

P
T
T

DS
DGR

GS

tot
stg
j

Drain-source voltage - - 1000 V
Drain-gate voltage RGS = 20 kΩ - 1000 V
Gate-source voltage - - 30 V
Drain current (DC) Ths = 25 ˚C - 1.5 A
Drain current (DC) Ths = 100 ˚C - 1.0 A
Drain current (pulse peak value) Ths = 25 ˚C - 6 A
Total power dissipation Ths = 25 ˚C - 30 W
Storage temperature - - 55 150 ˚C
Junction Temperature - - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R
R

th j-hs

th j-a

Thermal resistance junction to with heatsink compound - - 4.16 K/W
heatsink
Thermal resistance junction to - 55 - K/W
ambient

May 1995 1 Rev 1.200

Philips Semiconductors Product Specification

PowerMOS transistor BUK446-1000B

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

DSS

I

GSS

R

DS(ON)

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g

fs

C

iss

C

oss

C

rss

t

d on

t

r

t

d off

t

f

L

d

L

s

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 1000 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V
Zero gate voltage drain current VDS = 1000 V; VGS = 0 V; Tj = 25 ˚C - 2 20 µA
Zero gate voltage drain current VDS = 1000 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 10 V; ID = 1.5 A - 4.5 5.0 Ω
resistance

Forward transconductance VDS = 25 V; ID = 1.5 A 3.0 4.3 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1000 1250 pF

Output capacitance - 80 120 pF
Feedback capacitance - 30 50 pF

Turn-on delay time VDD = 30 V; ID = 2.3 A; - 10 25 ns
Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 50 70 ns
Turn-off delay time R
Turn-off fall time - 40 60 ns

= 50 Ω - 130 150 ns

gen

Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH

from package to centre of die

Internal source inductance Measured from source lead 6 mm - 7.5 - nH

from package to source bond pad

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

isol

Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - 1500 V
three terminals to external
heatsink

C

isol

Capacitance from T2 to external f = 1 MHz - 12 - pF
heatsink

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I
I

V
t

Q

DR

DRM

SD

rr

rr

Continuous reverse drain - - - 1.7 A
current
Pulsed reverse drain current - - - 6.8 A
Diode forward voltage IF = 1.7 A ; VGS = 0 V - 1.0 1.3 V

Reverse recovery time IF = 1.7 A; -dIF/dt = 100 A/µs; - 1800 - ns
Reverse recovery charge VGS = 0 V; VR = 100 V - 12 - µC

May 1995 2 Rev 1.200

Philips Semiconductors Product Specification

PowerMOS transistor BUK446-1000B

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Normalised Power Derating

with heatsink compound

Ths / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

with heatsink compound

Ths / C

= f(Ths)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Ths); conditions: VGS ≥ 10 V

D 25 ˚C

t

p

T

BUKx46-hv

t

p

D =

T

t

Zth / (K/W)

10

D =

0.5

1

0.2

0.1

0.05

0.1

0.02

t / s

P

D

0.01

0.001

0

1E-07 1E-05 1E-03 1E-01 1E+01

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-hs

ID / A

6

5

4

3

2

1

0

0 4 8 12 16 20 24 28

VGS / V =

VDS / V

BUK456-1000A

10

6

5

4.8

4.6

4.4

4

4.2

Fig.5. Typical output characteristics, Tj = 25 ˚C

ID = f(VDS); parameter V

GS

.

ID / A

10

RDS(ON) = VDS/ID

1

0.1

0.01

DC

10 1000

100

VDS / V

Fig.3. Safe operating area. Ths = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

BUK446-1000B

tp = 10 us

100 us

1 ms
10 ms

100 ms

RDS(ON) / Ohm

15

4.2 4.4 4.6 4.8

10

5

0

0 1 2 3 4

ID / A

Fig.6. Typical on-state resistance, Tj = 25 ˚C

R

p

= f(ID); parameter V

DS(ON)

BUK456-1000A

VGS / V =

5

10

.

GS

May 1995 3 Rev 1.200