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Philips Semiconductors Product Specification
PowerMOS transistor BUK444-800A/B
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic full-pack envelope. BUK444 -800A -800B
The device is intended for use in V
Switched Mode Power Supplies I
(SMPS), motor control, welding, P
DC/DC and AC/DC converters, and R
DS
D
tot
DS(ON)
in general purpose switching resistance
applications.
PINNING - SOT186 PIN CONFIGURATION SYMBOL
Drain-source voltage 800 800 V
Drain current (DC) 1.4 1.2 A
Total power dissipation 30 30 W
Drain-source on-state 6.0 8.0 Ω
PIN DESCRIPTION
case
d
1 gate
2 drain
3 source
case isolated
123
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
±V
DS
DGR
GS
Drain-source voltage - - 800 V
Drain-gate voltage RGS = 20 kΩ - 800 V
Gate-source voltage - - 30 V
-800A -800B
I
D
I
D
I
DM
P
tot
T
stg
T
j
Drain current (DC) Ths = 25 ˚C - 1.4 1.2 A
Drain current (DC) Ths = 100 ˚C - 0.9 0.75 A
Drain current (pulse peak value) Ths = 25 ˚C - 5.6 4.8 A
Total power dissipation Ths = 25 ˚C - 30 W
Storage temperature - - 55 150 ˚C
Junction Temperature - - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
R
th j-hs
th j-a
Thermal resistance junction to with heatsink compound - - 4.17 K/W
heatsink
Thermal resistance junction to - 55 - K/W
ambient
April 1993 1 Rev 1.100
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Philips Semiconductors Product Specification
PowerMOS transistor BUK444-800A/B
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
I
DSS
I
DSS
I
GSS
R
DS(ON)
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
C
iss
C
oss
C
rss
t
d on
t
r
t
d off
t
f
L
d
L
s
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 800 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V
Zero gate voltage drain current VDS = 800 V; VGS = 0 V; Tj = 25 ˚C - 2 20 µA
Zero gate voltage drain current VDS = 800 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 10 V; BUK444-800A - 5.0 6.0 Ω
resistance ID = 1.0 A BUK444-800B - 6.0 8.0 Ω
Forward transconductance VDS = 25 V; ID = 1.0 A 1.0 2.3 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 450 750 pF
Output capacitance - 42 70 pF
Feedback capacitance - 15 30 pF
Turn-on delay time VDD = 30 V; ID = 1.9 A; - 15 20 ns
Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 25 40 ns
Turn-off delay time R
Turn-off fall time - 30 40 ns
= 50 Ω - 5065ns
gen
Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - 1500 V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz - 12 - pF
heatsink
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
I
V
t
Q
DR
DRM
SD
rr
rr
Continuous reverse drain - - - 1.4 A
current
Pulsed reverse drain current - - - 5.6 A
Diode forward voltage IF = 1.4 A ; VGS = 0 V - 1.0 1.3 V
Reverse recovery time IF = 1.4 A; -dIF/dt = 100 A/µs; - 230 - ns
Reverse recovery charge VGS = 0 V; VR = 100 V - 1.9 - µC
April 1993 2 Rev 1.100
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Philips Semiconductors Product Specification
PowerMOS transistor BUK444-800A/B
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Normalised Power Derating
with heatsink compound
Ths / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
ID%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
with heatsink compound
Ths / C
= f(Ths)
D 25 ˚C
Normalised Current Derating
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
= f(Ths); conditions: VGS ≥ 10 V
D 25 ˚C
Zth / (K/W)
10
D =
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
0
1E-07 1E-05 1E-03 1E-01 1E+01
t / s
P
D
BUKx44-hv
t
p
T
D =
t
p
T
t
Fig.4. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-hs
ID / A
4
3
2
1
0
0 4 8 12 16 20 24 28
VDS / V
BUK454-800A
10
6
5
4.8
4.6
4.4
4.2
4
Fig.5. Typical output characteristics, Tj = 25 ˚C
ID = f(VDS); parameter V
GS
.
ID / A
10
RDS(ON) = VDS/ID
1
0.1
0.01
10 1000
DC
100
A
B
VDS / V
Fig.3. Safe operating area. Ths = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter t
BUK444-800A,B
tp = 10 us
100 us
1 ms
10 ms
100 ms
RDS(ON) / Ohm
20
15
10
5
0
4 4.2 4.4
4.6
0 1 2 3 4
ID / A
Fig.6. Typical on-state resistance, Tj = 25 ˚C
R
p
= f(ID); parameter V
DS(ON)
BUK454-800A
VGS / V =
4.8
5
GS
6
10
.
April 1993 3 Rev 1.100