Philips BUK444-60H Datasheet
Philips Semiconductors Product specification
PowerMOS transistor BUK444-60H
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic full-pack envelope. V
DS
Drain-source voltage 60 V
The device is intended for use in I
D
Drain current (DC) 21 A
Automotive applications, Switched P
tot
Total power dissipation 30 W
Mode Power Supplies (SMPS), T
j
Junction temperature 150 ˚C
motor control, welding, DC/DC and R
DS(ON)
Drain-source on-state 38 mΩ
AC/DC converters, and in general resistance
purpose switching applications.
PINNING - SOT186 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
Drain-source voltage - - 60 V
V
DGR
Drain-gate voltage RGS = 20 kΩ -60V
±VGSGate-source voltage - - 30 V
I
D
Drain current (DC) Ths = 25 ˚C - 21 A
I
D
Drain current (DC) Ths = 100 ˚C - 13 A
I
DM
Drain current (pulse peak value) Ths = 25 ˚C - 84 A
P
tot
Total power dissipation Ths = 25 ˚C - 30 W
T
stg
Storage temperature - - 55 150 ˚C
T
j
Junction temperature - - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction to with heatsink compound - 4.17 K/W
heatsink
R
th j-a
Thermal resistance junction to 55 - K/W
ambient
d
g
s
123
case
March 1996 1 Rev 1.000
Philips Semiconductors Product specification
PowerMOS transistor BUK444-60H
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 60 - - V
voltage
V
GS(TO)
Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V
I
DSS
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA
I
DSS
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
I
GSS
Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
R
DS(ON)
Drain-source on-state VGS = 10 V; ID = 20 A - 30 38 mΩ
resistance
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
Forward transconductance VDS = 25 V; ID = 20 A 7 14 - S
C
iss
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 900 1600 pF
C
oss
Output capacitance - 420 600 pF
C
rss
Feedback capacitance - 160 275 pF
t
d on
Turn-on delay time VDD = 30 V; ID = 3 A; - 15 30 ns
t
r
Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 55 90 ns
t
d off
Turn-off delay time R
gen
= 50 Ω - 75 125 ns
t
f
Turn-off fall time - 60 100 ns
L
d
Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
L
s
Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - 1500 V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz - 12 - pF
heatsink
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
Continuous reverse drain - - - 21 A
current
I
DRM
Pulsed reverse drain current - - - 84 A
V
SD
Diode forward voltage IF = 21 A ; VGS = 0 V - 0.9 1.8 V
t
rr
Reverse recovery time IF = 21 A; -dIF/dt = 100 A/µs; - 60 - ns
Q
rr
Reverse recovery charge VGS = 0 V; VR = 30 V - 0.25 - µC
March 1996 2 Rev 1.000
Philips Semiconductors Product specification
PowerMOS transistor BUK444-60H
AVALANCHE LIMITING VALUE
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W
DSS
Drain-source non-repetitive ID = 41 A ; VDD ≤ 25 V ; - - 100 mJ
unclamped inductive turn-off VGS = 10 V ; RGS = 50 Ω
energy
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
D 25 ˚C
= f(Ths)
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
D 25 ˚C
= f(Ths); conditions: VGS ≥ 10 V
Fig.3. Safe operating area. Ths = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = tp/T
0 20 40 60 80 100 120 140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
BUK474-60H
0.1 1 10 100 1000
VDS / V
ID / A
1000
100
10
1
0.1
100 us
1 ms
10 ms
100 ms
tp =
10 us
RDS(ON) = VDS/ID
DC
0 20 40 60 80 100 120 140
Ths / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
1E-07 1E-05 1E-03 1E-01 1E+01
0.001
0.01
0.1
1
10
0
0.2
0.1
0.05
0.02
0.5
BUK474-60H
tp / sec
Zth(j-hs) K/W
D =
t
p
t
p
T
T
P
t
D
D =
March 1996 3 Rev 1.000
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