Philips BUK438W-800B, BUK438W-800A Datasheet

Philips Semiconductors Product specification

PowerMOS transistor BUK438W-800A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic envelope. BUK438 -800A -800B
The device is intended for use in V
Switched Mode Power Supplies I
(SMPS), motor control, welding, P
DC/DC and AC/DC converters, and R

DS

D

tot

DS(ON)

in general purpose switching resistance
applications.

PINNING - SOT429 (TO247) PIN CONFIGURATION SYMBOL

Drain-source voltage 800 800 V
Drain current (DC) 7.6 6.6 A
Total power dissipation 220 220 W
Drain-source on-state 1.5 2.0 Ω

PIN DESCRIPTION

d

1 gate
2 drain
3 source

tab drain

2

1

3

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
±V

DS
DGR

GS

Drain-source voltage - - 800 V
Drain-gate voltage RGS = 20 kΩ - 800 V
Gate-source voltage - - 30 V

-800A -800B

I

D

I

D

I

DM

P

tot

T

stg

T

j

Drain current (DC) Tmb = 25 ˚C - 7.6 6.6 A
Drain current (DC) Tmb = 100 ˚C - 4.8 4.1 A
Drain current (pulse peak value) Tmb = 25 ˚C - 30 26 A

Total power dissipation Tmb = 25 ˚C - 220 W
Storage temperature - - 55 150 ˚C
Junction temperature - - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R
R

th j-mb

th j-a

Thermal resistance junction to - - 0.57 K/W
mounting base
Thermal resistance junction to - 45 - K/W
ambient

February 1998 1 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor BUK438W-800A/B

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

DSS

I

GSS

R

DS(ON)

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g

fs

C

iss

C

oss

C

rss

t

d on

t

r

t

d off

t

f

L

d

L

d

L

s

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 800 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V
Zero gate voltage drain current VDS = 800 V; VGS = 0 V; Tj = 25 ˚C - 5 50 µA
Zero gate voltage drain current VDS = 800 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 10 V; BUK438-800A - 1.2 1.5 Ω
resistance ID = 4.0 A BUK438-800B - 1.6 2.0 Ω

Forward transconductance VDS = 25 V; ID = 4.0 A 3.0 7.5 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 2000 3000 pF

Output capacitance - 200 300 pF
Feedback capacitance - 100 200 pF

Turn-on delay time VDD = 30 V; ID = 2.6 A; - 40 90 ns
Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 100 140 ns
Turn-off delay time R
Turn-off fall time - 100 140 ns

= 50 Ω - 300 430 ns

gen

Internal drain inductance Measured from contact screw on - 5 - nH

tab to centre of die

Internal drain inductance Measured from drain lead 6 mm - 5 - nH

from package to centre of die

Internal source inductance Measured from source lead 6 mm - 12.5 - nH

from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

I

DRM

V

SD

t

rr

Q

rr

February 1998 2 Rev 1.000

Continuous reverse drain - - - 7.6 A
current
Pulsed reverse drain current - - - 30 A
Diode forward voltage IF = 7.6 A ;VGS = 0 V - 0.9 1.3 V

Reverse recovery time IF = 7.6 A; -dIF/dt = 100 A/µs; - 1.5 - µs
Reverse recovery charge VGS = 0 V; VR = 100 V - 20 - µC

Philips Semiconductors Product specification

PowerMOS transistor BUK438W-800A/B

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Tmb / C

= f(Tmb)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 10 V

D 25 ˚C

Zth j-mb / (K/W)

1

D =

0.5

0.2

0.1

0.1

0.05

0.02

0.01

0

0.001
1E-07 1E-05 1E-03 1E-01 1E+01

t / s

P

D

BUKx38-hv

t

t

p

p

D =

T

t

T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

VGS / V =

20

BUK4y8-800A

10

5.5

5

4.5

30

6

4

20

15

10

ID / A

5

0

0

10

VDS / V

Fig.5. Typical output characteristics, Tj = 25 ˚C

ID = f(VDS); parameter V

GS

.

ID / A

100

A

B

10

0.1

RDS(ON) = VDS/ID

1

10 1000

100

DC

VDS / V

BUK438-800

tp = 10 us

100 us

1 ms
10 ms

100 ms

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

RDS(ON) / Ohm

5

4

4.5

4

5

3

2

1

0

0 10 20

515

ID / A

Fig.6. Typical on-state resistance, Tj = 25 ˚C

R

p

= f(ID); parameter V

DS(ON)

BUK4y8-800A

VGS / V =

5.5
6

10

.

GS

February 1998 3 Rev 1.000