Philips BUK436W-200A, BUK436W-200B Datasheet

Philips Semiconductors Product Specification

PowerMOS transistor BUK436W-200A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic envelope. BUK436 -200A -200B
The device is intended for use in V
Switched Mode Power Supplies I
(SMPS), motor control, welding, P
DC/DC and AC/DC converters, and R

DS

D

tot

DS(ON)

in general purpose switching resistance
applications.

PINNING - SOT429 (TO247) PIN CONFIGURATION SYMBOL

Drain-source voltage 200 200 V
Drain current (DC) 19 17 A
Total power dissipation 125 125 W
Drain-source on-state 0.16 0.2 Ω

PIN DESCRIPTION

d

1 gate
2 drain
3 source

tab drain

2

1

3

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
±V

DS
DGR

GS

Drain-source voltage - - 200 V
Drain-gate voltage RGS = 20 kΩ - 200 V
Gate-source voltage - - 30 V

-200A -200B

I

D

I

D

I

DM

P

tot

T

stg

T

j

Drain current (DC) Tmb = 25 ˚C - 19 17 A
Drain current (DC) Tmb = 100 ˚C - 12 11 A
Drain current (pulse peak value) Tmb = 25 ˚C - 76 68 A

Total power dissipation Tmb = 25 ˚C - 125 W
Storage temperature - - 55 150 ˚C
Junction Temperature - - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R
R

th j-mb

th j-a

Thermal resistance junction to - - 1.0 K/W
mounting base
Thermal resistance junction to - 45 - K/W
ambient

July 1997 1 Rev 1.000

Philips Semiconductors Product Specification

PowerMOS transistor BUK436W-200A/B

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

DSS

I

GSS

R

DS(ON)

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g

fs

C

iss

C

oss

C

rss

t

d on

t

r

t

d off

t

f

L

d

L

d

L

s

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 200 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V
Zero gate voltage drain current VDS = 200 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA
Zero gate voltage drain current VDS = 200 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 10 V; BUK436-200A - 0.15 0.16 Ω
resistance ID = 10 A BUK436-200B - 0.17 0.20 Ω

Forward transconductance VDS = 25 V; ID = 10 A 8.5 16 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1500 2000 pF

Output capacitance - 300 400 pF
Feedback capacitance - 60 100 pF

Turn-on delay time VDD = 30 V; ID = 3 A; - 20 30 ns
Turn-on rise time VGS = 10 V; - 40 60 ns
Turn-off delay time R
Turn-off fall time RGS = 50 Ω - 5070ns

= 50 Ω; - 145 185 ns

gen

Internal drain inductance Measured from contact screw on - 5 - nH

tab to centre of die

Internal drain inductance Measured from drain lead 6 mm - 5 - nH

from package to centre of die

Internal source inductance Measured from source lead 6 mm - 12.5 - nH

from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

I

DRM

V

SD

t

rr

Q

rr

July 1997 2 Rev 1.000

Continuous reverse drain - - - 19 A
current
Pulsed reverse drain current - - - 76 A
Diode forward voltage IF = 19 A ; VGS = 0 V - 1.0 1.7 V

Reverse recovery time IF = 19 A; -dIF/dt = 100 A/µs; - 180 - ns
Reverse recovery charge VGS = 0 V; VR = 30 V - 2.5 - µC

Philips Semiconductors Product Specification

PowerMOS transistor BUK436W-200A/B

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Tmb / C

= f(Tmb)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 10 V

D 25 ˚C

10

1

0.1

0.01

0.001

Zth j-mb / (K/W)

D =

0.5

0.2

0.1

0.05

0.02

0

1E-05 1E-03 1E-01 1E+01

t / s

P

D

BUKx56-lv

p

p

t

t

D =

T

t

T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

ID / A

40

30

20

10

0

0 2 4 6 8 10 12 14 16 18 20

20

10

VDS / V

BUK456-200A

7

VGS / V =

6

5

4

Fig.5. Typical output characteristics, Tj = 25 ˚C

ID = f(VDS); parameter V

GS

.

ID / A

100

10

1

0.1

RDS(ON) = VDS/ID

A B

DC

1 10 100 1000

VDS / V

BUK436-200A,B

tp = 10 us

100 us

1 ms
10 ms

100 ms

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

RDS(ON) / Ohm

1.0

4.5

4

0.8

0.6

0.4

0.2

0

0 10 20 30 40

5

ID / A

Fig.6. Typical on-state resistance, Tj = 25 ˚C

R

p

= f(ID); parameter V

DS(ON)

BUK456-200A

VGS / V =

5.5

6

7

10

.

GS

July 1997 3 Rev 1.000