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Philips Semiconductors Product specification
PowerMOS transistor BUK436W-1000B
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope. V
The device is intended for use in I
Switched Mode Power Supplies P
(SMPS), motor control, welding, R
DC/DC and AC/DC converters, and resistance
DS
D
tot
DS(ON)
in general purpose switching
applications.
PINNING - SOT429 (TO247) PIN CONFIGURATION SYMBOL
Drain-source voltage 1000 V
Drain current (DC) 3.1 A
Total power dissipation 125 W
Drain-source on-state 5 Ω
PIN DESCRIPTION
d
1 gate
2 drain
3 source
tab drain
2
1
3
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
±V
I
D
I
D
I
DM
P
T
T
DS
DGR
GS
tot
stg
j
Drain-source voltage - - 1000 V
Drain-gate voltage RGS = 20 kΩ - 1000 V
Gate-source voltage - - 30 V
Drain current (DC) Tmb = 25 ˚C - 3.1 A
Drain current (DC) Tmb = 100 ˚C - 2.0 A
Drain current (pulse peak value) Tmb = 25 ˚C - 12 A
Total power dissipation Tmb = 25 ˚C - 125 W
Storage temperature - -55 150 ˚C
Junction temperature - - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
R
th j-mb
th j-a
Thermal resistance junction to - - 1.0 K/W
mounting base
Thermal resistance junction to - 45 - K/W
ambient
March 1998 1 Rev 1.000
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Philips Semiconductors Product specification
PowerMOS transistor BUK436W-1000B
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
I
DSS
I
DSS
I
GSS
R
DS(ON)
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
C
iss
C
oss
C
rss
t
d on
t
r
t
d off
t
f
L
d
L
d
L
s
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 1000 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V
Zero gate voltage drain current VDS = 1000 V; VGS = 0 V; Tj = 25 ˚C - 2 20 µA
Zero gate voltage drain current VDS = 1000 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 10 V; ID = 1.5 A - 4.5 5.0 Ω
resistance
Forward transconductance VDS = 25 V; ID = 1.5 A 3.0 4.3 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1000 1250 pF
Output capacitance - 80 120 pF
Feedback capacitance - 30 50 pF
Turn-on delay time VDD = 30 V; ID = 2.3 A; - 10 25 ns
Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 25 40 ns
Turn-off delay time R
Turn-off fall time - 40 60 ns
= 50 Ω - 130 150 ns
gen
Internal drain inductance Measured from contact screw on - 5 - nH
tab to centre of die
Internal drain inductance Measured from drain lead 6 mm - 5 - nH
from package to centre of die
Internal source inductance Measured from source lead 6 mm - 12.5 - nH
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
I
DRM
V
SD
t
rr
Q
rr
March 1998 2 Rev 1.000
Continuous reverse drain - - - 3.5 A
current
Pulsed reverse drain current - - - 14 A
Diode forward voltage IF = 3.5 A ; VGS = 0 V - 1.0 1.3 V
Reverse recovery time IF = 3.5 A; -dIF/dt = 100 A/µs; - 1800 - ns
Reverse recovery charge VGS = 0 V; VR = 100 V - 12 - µC
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Philips Semiconductors Product specification
PowerMOS transistor BUK436W-1000B
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Normalised Power Derating
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
ID%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
= f(Tmb)
D 25 ˚C
Normalised Current Derating
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
= f(Tmb); conditions: VGS ≥ 10 V
D 25 ˚C
10
1
0.1
0.01
0.001
Zth j-mb / (K/W)
D =
0.5
0.2
0.1
0.05
0.02
0
1E-05 1E-03 1E-01 1E+01
t / s
P
D
p
t
T
BUKx56-hv
p
t
D =
T
t
Fig.4. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-mb
ID / A
6
5
4
3
2
1
0
0 4 8 12 16 20 24 28
VGS / V =
VDS / V
BUK456-1000A
10
6
5
4.8
4.6
4.4
4
4.2
Fig.5. Typical output characteristics, Tj = 25 ˚C
ID = f(VDS); parameter V
GS
.
ID / A
100
10
RDS(ON) = VDS/ID
1
DC
0.1
10 100 1000
VDS / V
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter t
BUK456-1000B
tp = 10 us
100 us
1 ms
10 ms
100 ms
RDS(ON) / Ohm
15
4.2 4.4 4.6 4.8
10
5
0
0 1 2 3 4
ID / A
Fig.6. Typical on-state resistance, Tj = 25 ˚C
R
p
= f(ID); parameter V
DS(ON)
BUK456-1000A
VGS / V =
5
10
.
GS
March 1998 3 Rev 1.000