Philips BUK223-50Y Technical data

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Philips Semiconductors Product specification

PowerMOS transistor BUK223-50Y
TOPFET high side switch

DESCRIPTION QUICK REFERENCE DATA

Monolithic single channel high side SYMBOL PARAMETER MIN. UNIT
protected power switch in
TOPFET2 technology assembled in I
a 5 pin plastic package.

L

APPLICATIONS SYMBOL PARAMETER MAX. UNIT

Nominal load current (ISO) 12 A

General controller for driving V
lamps, motors, solenoids, heaters. I

BG

L

T

j

R

ON

Continuous off-state supply voltage 50 V
Continuous load current 25 A
Continuous junction temperature 150 ˚C
On-state resistance Tj = 25˚C 30 mΩ

FEATURES FUNCTIONAL BLOCK DIAGRAM

Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Overtemperature protection
Load current limiting
Latched overload and
short circuit protection
Overvoltage and undervoltage
shutdown with hysteresis
On-state open circuit load
detection
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
ESD protection on all pins
Reverse battery, overvoltage
and transient protection

STATUS

INPUT

GROUND

CONTROL &

PROTECTION

CIRCUITS

RG

Fig.1. Elements of the TOPFET HSS with internal ground resistor.

BATT

POWER
MOSFET

LOAD

PINNING - SOT263B-01 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 Input
2 Flag
3 Drain
4 Protection supply
5 Source

tab Drain

November 2002 1 Rev 2.000

mb mb

12345

Front view

MBL267

Fig. 2. Fig. 3.

TOPFET

P
F

I

D

P

S

Philips Semiconductors Product specification

PowerMOS transistor BUK223-50Y
TOPFET high side switch

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

BG

I

L

P

D

T

stg

T

j

T

sold

-V

BG

-V

BG

RI, R

II, I

S

II, I

S

E

BL

Continuous supply voltage 0 50 V
Continuous load current T

Total power dissipation T

100˚C - 25 A

mb ≤

25˚C - 80 W

mb ≤

Storage temperature -55 175 ˚C
Continuous junction temperature

1

- 150 ˚C

Lead temperature during soldering - 260 ˚C

Reverse battery voltages

2

Continuous reverse voltage - 16 V
Peak reverse voltage - 32 V

Application information

S

External resistors

3

to limit input, status currents 3.2 - kΩ

Input and status

Continuous currents -5 5 mA
Repetitive peak currents δ ≤ 0.1, tp = 300 µs -50 50 mA
Inductive load clamping IL = 10 A, VBG = 16 V
Non-repetitive clamping energy Tj = 150˚C prior to turn-off - 270 mJ

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

C

Electrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Thermal resistance

R

th j-mb

R

th j-a

1 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold T

2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must

3 To limit currents during reverse battery and transient overvoltages (positive or negative).
4 Of the output power MOS transistor.

Junction to mounting base - - 1.25 1.56 K/W
Junction to ambient in free air - 60 75 K/W

to protect the switch.

limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the T
rating must be observed.

4

the over temperature trip operates

j(TO)

j

November 2002 2 Rev 2.000

Philips Semiconductors Product specification

PowerMOS transistor BUK223-50Y
TOPFET high side switch

STATIC CHARACTERISTICS

Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Clamping voltages

V
V

-V

-V

V

I

I

I
I

BG

BL

LG

LG

BG

B

L

G

L

Battery to ground IG = 1 mA 50 55 65 V
Battery to load IL = IG = 1 mA 50 55 65 V
Negative load to ground IL = 10 mA 18 23 28 V
Negative load voltage

1

IL = 10 A; tp = 300 µs202530V

Supply voltage battery to ground
Operating range

2

- 5.5 - 35 V

Currents 9 V ≤ VBG ≤ 16 V
Quiescent current

3

VLG = 0 V - - 20 µA

Tmb = 25˚C - 0.1 2 µA

Off-state load current

4

VBL = V

BG

--20µA

Tmb = 25˚C - 0.1 1 µA
Operating current
Nominal load current

5

6

IL = 0 A - 2 4 mA
VBL = 0.5 V 12 - - A

Resistances V

R

ON

On-state resistance

7

BG

9 to 35 V 10 A 300 µs25˚C - 22 30 mΩ

I

L

t

p

T

mb

150˚C- - 55 mΩ

R

ON

On-state resistance 6 V 10 A 300 µs25˚C - 28 38 mΩ

150˚C- - 70 mΩ

R

G

1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
2 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4 The measured current is in the load pin only.
5 This is the continuous current drawn from the supply with no load connected, but with the input high.
6 Defined as in ISO 10483-1. For comparison purposes only. This parameter will not be characterised for automotive PPAP.
7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.

Internal ground resistance IG = 10 mA 95 150 190 Ω

November 2002 3 Rev 2.000