Philips BUK221-50DY Technical data

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1. Product profile

1.1 Description

Monolithic temperature and overload protected dual high-side powerswitch based on
TOPFET™ Trench technology in a 7-pin surface mount plastic package.

Product availability:

BUK221-50DY

Dual channel high-side TOPFET™

Rev. 01 — 16 April 2003 Product data

BUK221-50DY in SOT427 (D2-PAK).

1.2 Features

■ Very low quiescent current ■ CMOS logic compatibility
■ Power TrenchMOS™ ■ Current limitation
■ Overtemperature protection ■ Latched overload protection
■ Over and undervoltage protection ■ ESD protection for all pins
■ Reverse battery protection ■ Diagnostic status indication
■ Low charge pump noise ■ Off-state open load detection
■ Loss of ground protection ■ Load dump protection
■ Negative load clamping ■ Internal ground resistor.

1.3 Applications

■ 12 and 24 V grounded loads ■ High inrush current loads
■ Inductive loads ■ Replacement for relays and fuses.

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Min Max Units

R

BLon

I

L

I

L(nom)

I

L(lim)

V

BG(oper)

battery-load on-state resistance - 90 mΩ
load current - 4 A
nominal load current (ISO) 3.6 - A
self-limiting load current 8 16 A
battery-ground operating voltage 5.5 35 V

Philips Semiconductors

2. Pinning information

BUK221-50DY

Dual channel high-side TOPFET™

B

S

mb

1234567

Front view

No connection can be made to pin 4
(cropped).

MBK128

I1
I2

P represents protection circuitry.

Fig 1. Pinning; SOT427 (D2-PAK). Fig 2. Symbol; (Dual High-Side Switch)

TOPFET

2.1 Pin description

Table 2: Pin description

Symbol Pin I/O Description

L1 1 O load 1
G 2 - circuit common ground
I1 3 I input 1
B4-

[1] [2]

S 5 O status
I2 6 I input 2
L2 7 O load 2

-mb-

[2]

battery

mounting base

P

G

TM

.

L1

L2

03pa68

[1] Pin 4 is cropped and cannot be connected to the PCB by surface mounting.
[2] The battery is connected to the mounting base.

9397 750 11167

Product data Rev. 01 — 16 April 2003 2 of 16

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Philips Semiconductors

3. Block diagram

BUK221-50DY

Dual channel high-side TOPFET™

BUK221-50DY

4/mb

B

CHANNEL1

VOLTAGE

REGULATOR

CHARGE PUMP

CURRENT LIMIT

3

I1

CONTROL

LOGIC1

STATUS DIAGNOSIS

OPEN CIRCUIT

OVERVOLTAGE

PROTECTION

UNDERVOLTAGE

PROTECTION

SHORT CIRCUIT

PROTECTION

TEMPERATURE

CHANNEL2

REGULATOR

CHARGE PUMP

SENSOR

SENSOR

VOLTAGE

POWER
MOSFET1

POWER
MOSFET2

1

L1

5

S

CURRENT LIMIT

OPEN CIRCUIT

6

I2

2

G

CONTROL

LOGIC2

R

G

SENSOR

OVERVOLTAGE

PROTECTION

UNDERVOLTAGE

PROTECTION

SHORT CIRCUIT

PROTECTION

TEMPERATURE

SENSOR

Fig 3. Elements of the dual high-side TOPFET switch.

7

L2

R

LG1

R

LG2

03pa69

9397 750 11167

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Product data Rev. 01 — 16 April 2003 3 of 16

Philips Semiconductors

BUK221-50DY

Dual channel high-side TOPFET™

4. Functional description

A diagnostic status ensures faster fault detection.
Active current limit is combined with latched short circuit protection in order to

protect the device in the event of a short circuit.
Thermal shutdown for high temperature conditions has an automatic restart at a

lower temperature so providing protection against excessive power dissipation.
Active clamping protects the device against low energy spikes.
Undervoltage lockout means the device shuts down for low battery voltages, thus

avoiding faulty operation.
Overvoltage shutdown in the on-state protects a load such as a lamp filament from

potentially destructive voltage spikes.

Table 3: Truth table

Abbreviations: L = logic LOW; H = logic HIGH; X = don’t care; 0 = condition not present; 1 = condition present;
UV = undervoltage; OV = overvoltage; OC = open circuit load; SC = short circuit; OT = overtemperature

Input Supply Load 1 Load 2 Load output Status Operating mode

1 2 UV OV OC SC OT OC SC OT 1 2

L L 0 X 0 X X 0 X X OFF OFF H both off & normal
LL0X1XXXXXOFFOFF Lboth off, one/both OC or

shorted to V

Figure 10

L H 0 X 1 X X 0 0 0 OFF ON L one off & OC, with other on

& normal

HL00000000ONOFFHone on & normal, with other

off & normal
HH00000000ONON Hboth on & normal
H X 1 0 X X X 0 X X OFF OFF H supply undervoltage lockout
H X 0 1 X 0 0 X 0 0 OFF OFF H supply overvoltage

shutdown
HX0001XXXXOFFX Lone SC tripped
HL0001X00XOFFOFFLone SC tripped, with other

off & normal
HH0001X000OFFON Lone SC tripped, with other

on & normal
HX00001XXXOFFX Lone OT shutdown
HL0000100XOFFOFFLoneOTshutdown,with other

off & normal
HH00001000OFFON LoneOTshutdown,with other

on & normal

[1]

.

or battery;

S

[1] The status will continue to indicate OT (even if the input goes LOW) until the device cools below the reset threshold temperature.

See “Overtemperature protection” characteristics in Table 6 “Static characteristics”.

9397 750 11167

Product data Rev. 01 — 16 April 2003 4 of 16

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Philips Semiconductors

BUK221-50DY

Dual channel high-side TOPFET™

5. Limiting values

Table 4: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

BG

I

L

P

tot

T

stg

T

j

T

mb

battery-ground supply voltage
load current Tmb≤ 130 °C-4A
total power dissipation Tmb≤ 25 °C - 44.6 W
storage temperature −55 +175 °C
junction temperature −40 +150 °C
mounting base temperature during soldering (≤ 10 s) - 260 °C

Reverse battery voltage

V
V

BGR
BGRR

reverse battery-ground supply voltage RI≥ 3.3 kΩ; RSS≥ 3.3 kΩ; Figure 10
repetitive reverse battery-ground

supply voltage

Input current

I
I

I
IRM

input current −5+5mA
repetitive peak input current δ≤0.1; tp= 300 µs −50 +50 mA

Status current

I

S

I

SRM

status current −5+5mA
repetitive peak status current δ≤0.1; tp= 300 µs −50 +50 mA

Inductive load clamping

E

BL(CL)S

non-repetitive battery-load clamping
energy

Electrostatic discharge voltage

V

esd

electrostatic discharge voltage Human Body Model 1; C = 100 pF;

Tj= 150 °C prior to turn-off; VBG=13V;

= 5 A; (one channel) Figure 13

I

L

R = 1.5 kΩ

[1]

-45V

[2]

-16V

-32V

-60mJ

-2kV

[1] The device will not be harmed by exposure to the maximum supply voltage, but normal operation is not possible because of overvoltage

shutdown - see Table 6 “Static characteristics” for the operating range.

[2] Reverse battery voltage is only allowed with external resistors to limit the input and status currents to a safe value. The connected load

must limit the reverse load current. The internal ground resistor limits the reverse battery ground current. See Figure 10 “Typical

dynamic response circuit diagram including reverse supply protection and open load detection.”

6. Thermal characteristics

Table 5: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-mb)

thermal resistance from junction to
mounting base

R

th(j-a)

thermal resistance from junction to
ambient

9397 750 11167

Product data Rev. 01 — 16 April 2003 5 of 16

per channel - 4 5.6 K/W
both channels - 2 2.8 K/W
mounted on printed circuit board;

- 50 - K/W

minimum footprint

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.